TLP181(GB,F,T) - Toshiba - Datasheet.Directory

TLP181

2009-11-12

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP181

Office Machine

Programmable Controllers

AC Adapter

I/O Interface Board

The TOSHIBA mini flat coupler TLP181 is a small outline coupler, suitable

for surface mount assembly.

TLP181 consist of a photo transistor optically coupled to a gallium arsenide

infrared emitting diode. Since TLP181 is smaller than DIP package, it’s

suitable for high-density surface mounting applications such as

programmable controllers

• Collector−emitter voltage: 80V (min)

• Current transfer ratio: 50% (min)

Rank GB: 100% (min)

• Isolation voltage: 3750Vrms (min)

• Operation Temperature:-55 to 110 ˚C

• Safety Standards

UL recognized: UL1577, File No. E67349

cUL recognized: CSA Component Acceptance Service No. 5A

File No.E67349

• BSI approved: BS EN60065:2002, certificate No.8285

BS EN60950-1:2006 certificate No.8286

Option (V4) type

VDE approved : EN60747-5-2

Maximum Operating Insuration Voltage: 565 Vpk

Highest Permissible Overvoltage: 6000 Vpk

(Note) : When a EN60747-5-2 approved type is needed,

Please designate “Option(V4)”

Pin Configuration (top view)

1: Anode

3: Cathode

4: Emitter

6: Collector

Unit in mm

TOSHIBA 11−4C1

Weight: 0.09 g (Typ.)

TLP181

2009-11-12

Current Transfer Ratio

Current Transfer Ratio (%)

(IC / IF)

IF = 5mA, VCE = 5V, Ta = 25°C

Type Classification

Min Max

Marking Of Classification

Blank 50 600

Blank ,Y,Y■,YE,G,G■,GR,B, B■,BL,GB

Rank Y 50 150 YE

Rank GR 100 300 GR

Rank BL 200 600 BL

Rank GB 100 600 GB

Rank YH 75 150 Y■

Rank GRL 100 200 G

Rank GRH 150 300 G■

TLP181

Rank BLL 200 400 B

*1: EX, Rank GB: TLP181 (GB)

(Note) Application, type name for certification test, please use standard product type name, i, e.

TLP181 (GB): TLP181

TLP181

2009-11-12

Absolute Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Forward current IF 50 mA

Forward current detating ΔIF / °C −1.4 (Ta ≥89°C) mA / °C

Pulse forward current

(100μs pulse, 100pps) IFP 1 A

Reverse voltage VR 5 V

LED

Junction temperature Tj 125 °C

Collector−emitter voltage VCEO 80 V

Emitter−collector voltage VECO 7 V

Collector current IC 50 mA

Collector power dissipation

(1 Circuit) PC 150 mW

Collector power dissipation

derating (1 Circuit Ta ≥ 25°C) ΔPC / °C −1.5 mW / °C

Detector

Junction temperature Tj 125 °C

Storage temperature range Tstg −55 to 125 °C

Operating temperature range Topr −55 to 110 °C

Lead soldering temperature Tsol 260 (10s) °C

Total package power dissipation PT 200 mW

Total package power dissipation

derating (Ta ≥ 25°C) ΔPT / °C −2.0 mW / °C

Isolation voltage

(AC, 1min., R.H. ≤ 60%) (Note 1) BVS 3750

Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

(Note 1) Device considered a two−terminal device: Pin1, 3 shorted together and pins 4, 6 shorted together

Recommended Operating Conditions

Characteristic Symbol Min Typ. Max Unit

Supply voltage VCC ― 5 48 V

Forward current IF ― 16 20 mA

Collector current IC ― 1 10 mA

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this

product, please confirm specified characteristics shown in this document.

TLP181

2009-11-12

Individual Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Forward voltage VF I

F = 10 mA 1.0 1.15 1.3 V

Reverse current IR V

R = 5 V — — 10 μA

LED

Capacitance CT V = 0, f = 1 MHz — 30 — pF

Collector−emitter

breakdown voltage V(BR) CEO I

C = 0.5 mA 80 — — V

Emitter−collector

breakdown voltage V(BR) ECO I

E = 0.1 mA 7 — — V

VCE = 48 V, ( Ambient light

below 1000 lx) — 0.01

(2)

0.1

(10) μA

Collector dark current ICEO

VCE = 48 V, Ta = 85°C, ( Ambient

light below 1000 lx) — 2

(4)

(50) μA

Detector

Capacitance

(collector to emitter) CCE V = 0, f = 1 MHz — 10 — pF

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition MIn Typ. Max Unit

50 — 600

Current transfer ratio IC / IF IF = 5 mA, VCE = 5 V

Rank GB 100 — 600

— 60 —

Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V

Rank GB 30 — —

IC = 2.4 mA, IF = 8 mA — — 0.4

— 0.2 —

Collector−emitter

saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA

Rank GB — — 0.4

Off−state collector current IC (off) V

F = 0.7V, VCE = 48 V — 1 10 μA

Isolation Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Capacitance

(input to output) CS VS = 0V, f = 1 MHz — 0.8 — pF

Isolation resistance RS VS = 500 V, R.H. ≤ 60% 1×1012 1014 — Ω

AC, 1 minute 3750 — —

AC, 1 second, in oil — 10000 —

Vrms

Isolation voltage BVS

DC, 1 minute, in oil — 10000 — Vdc

TLP181

2009-11-12

Switching Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Rise time tr — 2 —

Fall time tf — 3 —

Turn−on time ton — 3 —

Turn−off time toff

VCC = 10 V, IC = 2 mA

RL = 100Ω

— 3 —

μs

Turn−on time tON — 2 —

Storage time ts — 25 —

Turn−off time tOFF

RL = 1.9 kΩ (Fig.1)

VCC = 5 V, IF = 16 mA

— 40 —

μs

Fig. 1 Switching time test circuit

tOFF

tON

VCE

4.5V

0.5V

IF VCC

VCE

TLP181

2009-11-12

PC – Ta

200

−20 0 20 40 60 80 100 120

160

120

Allowable collector power

dissipation PC (mW)

Ambient temperature Ta (°C)

IFP – DR

Duty cycle ratio DR

Pulse forward current IFP (mA)

3000

Pulse width ≤ 100μs

Ta = 25° C

10−3 3 10−2 3 10−1 3 100

100

300

1000

500

ΔVF / ΔTa – IF

Forward current IF (mA)

Forward voltage temperature

coefficient ΔVF / ΔTa ( m V / ° C )

−3.2

−0.4

0.1

−2.8

−2.4

−2.0

−1.6

−1.2

−0.8

0.3 0.5 1 3 5 10 30 50

IFP – VFP

Pulse forward voltage VFP (V)

1000

0.6

Pulse width ≤ 10μs

Repetitive

Frequency = 100Hz

Ta = 25°C

500

300

100

1.0 1.4 1.8 2.2 2.6 3.0

Pulse forward current IFP (mA)

IF – Ta

Ambient temperature Ta (°C)

Allowable forward current

IF (mA)

100

−20

0 20 40 60 80 100 120

IF – VF

Forward voltage VF (V)

Forward current IF (mA)

100

0.001

0.1

0.01

0.4 0.8 1.2 1.6 2

−25°C 85°C 25

°C

TLP181

2009-11-12

Collector current IC (mA)

IC – VCE

Collector-emitter voltage VCE (V)

2 4 6 8 10

50mA

30mA

20mA

15mA

10mA

PC (max)

IF = 5mA

Ta = 25°C

Collector-emitter voltage VCE (V)

IC – VCE

0 1.0

0.2 0.4 0.6 0.8

Collector current IC (mA)

50mA

Ta = 25°C

40mA

30mA

20mA

10mA

5mA

2mA

IC – IF

Forward current IF (mA)

0.1

0.3

0.5

100

0.3 0.5 1 3 5 10 30 50

Sample A

Sample B

Ta = 25°C

VCE = 10V

VCE = 5V

VCE = 0.4V

Collector current IC (mA)

Forward current IF (mA)

1000

IC / IF – IF

0.1 0.3 0.5 1 3 5 10 30 50

100

300

500

VCE = 10V

VCE = 5V

VCE = 0.4V

Ta = 25°C

Current transfer ratio

C / IF (%)

Sample B

Sample A

Collector dark current ICEO (μA)

ICEO – Ta

VCE = 48V

10V

24V

20 40 60 80 100

Ambient temperature Ta (°C)

−

TLP181

2009-11-12

Collector-emitter saturation

voltage VCE(sat) (V)

VCE(sat) – Ta

0.24

Ambient temperature Ta (°C)

−40

0.20

0.12

0.08

0.04

−20 0 40 80 100 20 60

0.16

IF = 1mA

IC = 0.2mA

IC – Ta

100

−20 100

0 20 40 80

Collector current IC (mA)

VCE = 5V

0.1

0.3

0.5

1mA

0.5mA

5mA

10mA

IF = 25mA

Ambient temperature Ta (°C)

Switching Time – RL

Load resistance RL (kΩ)

100

300

500

1000

3 5 30 50

Switching time (μs)

Ta = 25°C

IF = 16mA

VCC = 5V

tOFF

tON

100 10

Switching time (μs)

Switching Time – Ta

160

−20 20 40 60 80

Ambient temperature Ta (°C)

0.5

0.1

100

0.3

50 tOFF

tON

IF = 16mA

VCC = 5V

RL = 1.9kΩ

TLP181

2009-11-12

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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes

for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the

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