SBR20100CT SBR20100CTF SBR20100CTI SBR20100CTB Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics Units IF(AV) Rectangular Waveform 20 A VRRM 100 V 0.67 -65 to 175 V, typ O C O VF@10A, Tj=125 C Tj (operating/storage) Device optimized for high temperature Power Supply applications ELECTRICAL: * Low Forward Voltage Drop * Reliable High Temperature Operation * Super Barrier Design * Softest, Fast Switching Capability * 175OC Operating Junction Temperature MECHANICAL: * Molded Plastic TO-220AB, TO-262, TO-263, and ITO-220 packages Case Styles SBR20100CT SBR20100CTF Anode 1 3 Anode TO-220AB Anode 1 Common Cathode ITO-220 SBR20100CTB 2 2 2 Common Cathode SBR20100CTI 3 Anode Anode 1 Common Cathode TO-262 2 3 Anode Anode 1 Common Cathode 3 Anode TO-263 ________________________________________________________________________________________________ www.apdsemi.com Version 2.0 - April 2006 1 SBR20100CT SBR20100CTF SBR20100CTI SBR20100CTB Maximum Ratings and Electrical Characteristics (at 25OC unless otherwise specified) SYMBOL UNITS VRM VRWM VRRM 100 Volts IO 20 Amps Peak Forward Surge Current - 1/2 60hz IFSM 120 Amps Peak Repetitive Reverse Surge Current (2uS-1Khz) IRRM 2 Amps Instantaneous Forward Voltage (per leg) IF = 10A; TJ = 25OC IF = 10A; TJ= 125OC VF Typ ----- Max 0.82 0.75 Maximum Instantaneous Reverse Current at Rated VRM TJ = 25OC TJ = 125OC IR * Typ ----- Max 100 10 DC Blocking Voltage Working Peak Reverse Voltage Peak Repetitive Reverse Voltage Average Rectified Forward Current (Rated VR-20Khz Square Wave) - 50% duty cycle Maximum Rate of Voltage Change (at Rated VR) dv/dt 10,000 Maximum Thermal Resistance JC (per leg) Package = TO-220AB, TO-262, & TO-263 Package = ITO-220 RJC 2 4 TJ -65 to +175 Operating and Storage Junction Temperature Volts uA mA V/uS O C/W O C * Pulse width < 300 uS, Duty cycle < 2% ________________________________________________________________________________________________ www.apdsemi.com Version 2.0 - April 2006 2 SBR20100CT SBR20100CTF SBR20100CTI SBR20100CTB 100 100 10 If, Instantaneous Forward Current (Amps) Ir, Reverse Current (mA) Tj=175C Tj=125C 1 Tj=75C 0.1 Tj=25C 0.01 20 40 60 80 Tj=125C 1 Tj=75C Tj=25C 0.1 0.10 0.001 0 Tj=175C 10 100 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 Vf, Instantaneous Forward Voltage (Volts) Vr, Reverse Voltage (Volts) Figure 1: Typical Reverse Current Figure 2: Typical Forward Voltage If, Average Forward Current (Amps) 10 5 0 0 25 50 75 100 125 150 175 Tc, Case Temp (C) Figure 3: Current Derating, Case APD SEMICONDUCTOR reserves the right to make changes without further notice to any products herein. APD SEMICONDUCTOR makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APD SEMICONDUCTOR assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in APD SEMICONDUCTOR data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. APD SEMICONDUCTOR does not convey any license under its patent rights nor the rights of others. APD SEMICONDUCTOR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APD SEMICONDUCTOR product could create a situation where personal injury or death may occur. Should Buyer purchase or use APD SEMICONDUCTOR products for any such unintended or unauthorized application, Buyer shall indemnify and hold APD SEMICONDUCTOR and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APD SEMICONDUCTOR was negligent regarding the design or manufacture of the part.. 1 Lagoon Drive, Suite 410, Redwood City, CA 94065, USA Ph: 650 508 8896 FAX: 650 508 8865 Homepage: www.apdsemi.com email: info@apdsemi.com ________________________________________________________________________________________________ www.apdsemi.com Version 2.0 - April 2006 3