BAV23S BAV23S Connection Diagram 3 3 3 L30 2 1 1 2 1 2 SOT-23 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 250 V IF(AV) Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 microsecond Pulse Width = 100 microsecond Storage Temperature Range 9.0 3.0 -55 to +150 A A C TJ Operating Junction Temperature 150 C Value Units *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter PD Power Dissipation 350 mW RJA Thermal Resistance, Junction to Ambient 357 C/W Electrical Characteristics Symbol Parameter VR Breakdown Voltage VF Forward Voltage IR Reverse Current trr Reverse Recovery Time 2000 Fairchild Semiconductor Corporation TA = 25C unless otherwise noted Test Conditions IR = 100 A IF = 100 mA IF = 200 mA VR = 250 V VR = 250 V, TA = 150C IF = IR = 30 mA, IRR = 3.0 mA, RL = 100 Min Max Units V 250 1.0 1.25 100 100 50 V V nA A ns BAV23S, Rev. C (continued) Typical Characteristics 300 Ta= 25C Reverse Current, IR [nA] Ta= 25C 250 140 200 150 130 100 120 50 0 10 R Reverse Voltage, VR [v] 150 110 1 2 3 5 10 20 30 Reverse Current, IR [uA] 50 100 400 350 300 250 225 1 2 3 F 5 10 20 30 Forward Current, IF [uA] 50 725 Ta= 25C 700 650 600 550 500 450 0.1 1.2 1 0.8 5 10 Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10 mA Total Capacitance, CT [pF] Ta= 25C 0.2 0.3 0.5 1 2 3 Forward Current, IF [mA] 1.3 Ta= 25 C 1.2 1.1 F Forward Voltage, VF [V] 1.4 Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100 V 100 Figure 3. Forward Voltage vs Forward Current VF - 1.0 to 100 uA 1.5 100 GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature Forward Voltage, VF [mV] 485 Ta= 25C 450 70 F F Forward Voltage, VF [mV] Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100 uA 20 30 50 Reverse Voltage, VR [v] 0.6 10 20 30 50 100 200 300 Forward Current, IF [mA] 500 Figure 5. Forward Voltage vs Forward Current VF - 10 - 800 mA 1 0 2 4 6 8 10 Reverse Voltage [V] 12 14 15 Figure 6. Total Capacitance BAV23S, Rev. C BAV23S Small Signal Diode (continued) Reverse Recovery Time, trr [ns] Typical Characteristics (continued) 4 Ta= 25C 500 IR 400 C u rre n t [m A ] 3.5 3 2.5 2 1.5 300 IF 200 200 100 30 40 Reverse Current [mA] 50 60 D 20 0 0 0 IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms OR WA R 300 100 (A V - A D CU R RE NT ST EA D Y Io - A V E R A ST VERA G E AT GE R R E C E ECTIF T I F -m IE D ICE D A CU URR R E NTR E - mNAT ) mA 0 50 50 100 100 150 150 o o A Ambient Temperature, T A [ C] Figure 7. Reverse Recovery Time vs Reverse Current TRR - IR 10 mA vs 60 mA Figure 8. Average Rectified Current (IF(AV)) versus Ambient Temperature (T A) 500 Power Dissipation, P D [mW] 1 10 -F 400 400 DO-35 Pkg 300 SOT-23 Pkg 200 100 0 0 50 100 150 Average Temperature, IO ( oC) 200 Figrue 9. Power Derating Curve BAS16, Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4