-Numerical Index VARAC TOR DIODES INDEX (continued) 1N4808-1N5153 CAPACITANCE MULTIPLIER PERFORMANCE | Voltage P PAGE I D . | TPE | yumeer | , | lotmay! Rage | Be| a@t | HX) @ Min Min C; Tol | Eaminy | Vi yp" 25C | Pin | fin | Pout | four | 7 o 2 prot % 1 Volts | Voits | Volts GHz | ohms | Watts |Watts| GHz | Watts | GHz | % 1N4808 27 20 |2.46 0 14.0 65 15 }0.05 0.50 1N4808A 27 10 | 2.46 0 14.0 65 15 |0.05 0.50 1N4808B 27 5.0 12.46 0 14.0 65 15 }0.05 0.50 1LN4 8086 27 2.0 12.46 444.90 65 L5 $0.05 9.50 1N4808D 27 1.0 |2.46 0 14.0 65 15 }0.05 0.50 1N4 809 33 20 12.46 0 44.0 60 15 }0.05 0.50 1N4809A 33 10 |2.46 0 14.0 60 15 |0.05 0.50 1N4809B 33 5.0 12.46 0 14.0 60 15 70.05 0.50 1N4809C 33 2.0 12.46 0 44.0 60 15 490.05 9.50 1N4809D 33 1.0 [2.46 0 14.0 60 15 |0.05 0.50 1N4810 39 20 12.44 Q 44.0 55 15 10.05 0.50 1N4810A 39 10 {2.44 0 14.0 55 15 |0.05 0.50 1N4810B 39 5.0 12,44 0 14.0 55 15 10.05 0.50 1N4810C 39 2.0 12.44 Q 14.0 55 15 10.05 0.50 1N4810D 39 1.0 12.44 oO 14.0 55 15 |0.05 0.50 1N4811 47 20 12.43 0 14.0 50 15 |0.05 0.50 1IN4811A 47 10 (2.43 Q 14.0 50 15 {0.05 0.50 1N4811B 47 5.0 12.43 0 14.0 50 15 ;0.05 0.50 1N4811C 47 2.0 |2.43 0 {4.0 50 15 |0.05 0.50 1N4811D 47 1.0 (2.43 Q 14.0 50 15 0.05 0.50 1N4812 56 20 12.42 0 14.0 40 15 |0.05 0.50 1N4812A 56 10 | 2.42 0 (4.0 40 15 10.05 0.50 1N4812B 56 5.0 | 2.42 Oo 14.0 40 15 |0.05 0.50 1N4812C 56 2.0 12,42 0 14.0 40 15 70.05 0.50 1N4812D 56 1.0 [2.42 0 {4.0 40 15 [0.05 0.50 1N4813 68 20 |2.40 0 {4.0 30 15 |0.05 0.50 1N4813A 68 10 | 2.40 0 14.0 30 15 $0.05 0.50 1N4813B 68 5.0 [2.40 0 44.0 30 15 [0.05 0.50 1N4813C 68 2.0 |2.40 0 14.0 30 15 [0.05 0.50 1N4813D 68 1.0 |2.40 0 14.0 30 15 |0.05 0.50 1N4814 82 20 |2.36 0 14.0 20 15 {0.05 0.50 1N4814A 82 10 |} 2.36 0 14.0 20 15 |0.05 0.50 1N4814B 82 5.0 | 2.36 Oo 14.0 20 15 |0.05 0.50 1N4814C 82 2.0 {2.36 0 14.0 20 15 [0.05 0.50 1N4814D 82 1,0 | 2.36 0 14.0 20 15 10.05 0.50 1N4815 100 20 12.33 0 14.0 20 15 10.05 0.50 LN4815A 100 10 | 2.33 0 14.0 20 15 |0.05 0.50 1N4815B 100 5.0 | 2.33 0 14.0 20 15 ]0.05 0.50 1N4815C 100 2.0 |2.33 0 |4.0 20 15 |0.05 0,50 1N4815D 100 1.0 12.33 0 14.0 20 15 |0.05 0.50 1N4885 35 2.57 16.0 [150 | 150 0.70 20 1N4886 35 2.57 |6.0 {120 | 120 0.80 20 1N4941 0.4 2.0 Q 16.0 |6.0 4} 2000 10 2.0 0.1 1N5139 12-10 6.8% 10 2.9 |4.0 60 60 350 |0.05 0.4 1N5139A 12-10 6.8% 5.0 2.9 14.0 60 60 350 |0.05 0.4 1N5140 12-10 10* 10 3.0 | 4.0 60 60 300 {0.05 0.4 1N5140A 12-10 10* 5.0 3.0 |4.0 60 60 300 |0.05 0.4 1N5141 12-10 12* 10 3.0 14.0 60 60 300 }0.05 O.4 IN5141A 12-10 12* 5.0 3.0 14.0 60 60 300 |0.05 0.4 1N5142 12-10 15* 10 3.0 14.0 60 60 250 70.05 0.4 1N5142A 12-10 15* 5.0 3.0 14.0 60 60 250 | 0.05 0.4 1N5143 12-10 18% 10 3.0 [4.0 60 60 250 |0.05 0.4 IN5143A 12-10 18% 5.0 3.0 )4.0 60 60 250 |0.05 0.4 1N5144 12-10 22* 10 3.4 14.0 60 60 200 |0.05 0.4 1N5144A 12-10 22* 5.0 3.4 14.0 60 60 200 |0.05 0.4 IN5145, 12-10 27% 190 3.4 44.0 60 60 200 |}0.05 0.4 1N5145A 12-10 27% 5.0 3.4 [4.0 60 60 200 {0.05 0.4 1N5146 12-10 33% 10 3.4 [4.0 60 60 200 10.05 0.4 LN5 146A 12-10 33% 5.9 3.4 14.0 60 60 200 |0.05 0.4 1N5147 12-10 39% 10 3.4 [4.0 60 60 200 10.05 0.4 LN5S147A 12-10 39% 5.0 3.4 14.0 60 60 200 10.05 0.4 1N5148 12-10 47* 10 3.4 ]4.0 60 60 200 {0.05 0.4 IN5148A 12-10 47* 5.0 3.4 ]4.0 60 60 200 |0.05 0.4 IN5149 12-12 411.5% 80 800 40.05 10 20 40.5 li 1.0 55 LN5150 12-12 |11.5* 80 800 |0.05 14 37 $0.5 24 1.0 65 LNSLSOA 42-15 12 19 aa 800 10.05 10.25%) 29.2 37 10.5 [25.1 1.0 68 IN5151 12-17 5.8% 75 11100 10.05 0.5 5.5 12 [1.0 6.0 2.0 50 LN5152 12-17 5.8% 75 |1100 | 0.05 0.5 5.5 12 [1.0 6.0 2.0 50 1N5152A 12-15 6.0 10 75 | 1100 |0.05 0O.5*! 11.7 12 |1.0 7.5 2.0 60 1N5153 12-17 5.8* 75 {1100 | 0.05 0.5 5.5 12 {1.0 6.0 2.0 50 1-89Voltage Variable Capacitance Diodes IN5 150A (siticon) 100 1000 mA = 200. MV1807ClI ( P, = 8.75-29.2 W iInd152A (MV1808B1) IND 153A (MV1808C1) IND I 55A Silicon high-frequency step-recovery power (MV1810B1) varactor devices optimized for critical multiplier ap- plications requiring tight control of junction capaci- tance and power dissipation. A CASE 46 CASE 47 IN5152A 1N5150A MV1808B1 MV1807C1 1N5155A 1N5153A MV1810B1 MV1808C1 MAXIMUM RATINGS Rating Symbol | 1N5150A | 1N5152A | 1N5153A) INSIS5SA Unit Reverse Voltage VR 80 15 75 35 Vde Forward Current I, 1000 250 250 200 mAdc RF Power Input Pa 40 15 15 7.0 Watts Total Device Dissipation @T, = 25C Py 29.2 11.7 11.7 8.75 Watts Derate above 25C 167 66.7 66.7 50 mw/C Operating and Storage Junction Ty T t <_ -65 to +200 _> c Temperature Range ste 12-151N5150A, 52A, 53A, 55A (continued) ELECTRICAL CHARACTERISTICS (7, = 25C untess otherwise noted) Voltage Variable Capacitance Diodes al Characteristics Symbol Min Typ Max Unit Reverse Breakdown Voltage BV, Vde (ly = 10 Adc) 1N5150A 80 - - 1N5152A, 1N5153A 75 - - 1N5155A 35 - - Reverse Current IR pAdc (Vp = 70 Vdc) 1N5150A4, - - 2.0 (VR = 70 Vdc, Ty = 150C) 1N5150A - - 100 We = 60 Vdc} IN5152A, 1N5153A - - 1.0 (Vp = 60 Vdc, Ty = 150C) 1N5152A, 1N5153A - - 100 (VR = 26 Vdc) 1N5155A, - - 1.0 We, = 26 Vdc, Ty = 150C) 1LN5155A - - 100 Series Resistance Rg Ohms (Vp = 6.0 Vdc, f = self-resonant frequency) 1N5150A - 0. 25 - 1N5152A, 1N5153A - 0.5 - 1N5155A - 0.9 - Series Inductance Ly nH 1N5150A, - 1.5 - 1N5152A - 0.8 - 1N5153A4 - 1.7 - ANS1i55A4 - 0.9 - Diode Capacitance (cy + Co) Cy pF VR = 6.0 Vdc, f=1.0 MHz) 1N5150A 10.8 - 13,2 1N5152A 5.4 - 6.6 1N5153A 5.8 - 7.0 1N5155A 1.71 - 2,09 Figure of Merit Q - (VR = 6.0 Vdc, f = 50 MHz) 1N5150A - 800 - 1N5152A, 1N5153A - 1100 - 1N5155A - 1700 - Thermal Resistance 850 C/W 1N5150A - - 6.0 1N5152A, 1N5153A - - 15 1N5155A - - 20 FUNCTIONAL TEST 1N5150A RF Power Output P,, 737 W, f,, = 500 MHz, Pout 25.1 - - Watts Doubling Efficiency fout = 1.0 GHz n 68 - - % 1N5152A, 1N5153A RF Power Output Pin =12 W, fin = 1.0 GHz, Pout 1.2 - - Watts Doubling Efficiency |f., = 2.0 GHz n 60 - - % 1IN5155A RF Power Output Pa =5.0 W, fn = 2,0 GHz, Pout 2.0 - - Watts Tripling Efficiency fout = 6:0 GHz n 40 - - % For typical curves and test circuits, see the following data sheets: 1N5149-1N5150 , 1N5151 thru 1N5153, and 1N5154-1N5155 . 12-16Numerical Index IN5117-1N5234A RECTIFIERS ZENER DIODES =z e Vp Ve . = = pace | = | Wolts) | (olts) camps) | 2(mit) may] Ve% | Po TYPE fe | REPLACEMENT = . m NUMBER | = 2 T (min) +: Tmax) | : oho ae : : Cc * 1N5117 8 1M200ZSB5 2-29 ZD 400* 5.0 1.0W 1N5118 Ss ZD 14% 5.0 | 3.0W 1N5119 ZD 40* 5.0 3.0W 1N5120 s ZD 45* 5.0 3.0W 1N5121 s ZzD 50% 5.0 3.0W 1N5122 8 ZD 60* 5.0 3.0W 1N5123 s ZD 70* 5.0 3.0W 1N5124 s ZD 80* 5.0 3.0W 1N5125 8 ZD 90% 5.0 3.0W 1N5126 S ZD 140% 5.0 3.0W 1N5127 s zZzD 170* 5.0 3.0W 1N5128 s ZD 190* 5.0 3.0W 1N5129 s ZD 260* 5.0 3.0W 1N5130 s ZD 280% 5.0 3.0W 1N5131 i) ZD 320* 5.0 } 3.0W 1N5132 s ZD 340% 5.0 | 3.0W 1N5133 s ZzD 380% 5.0 | 3.0W 1N5134 s zD 400* 5.0 } 3.0W 1N5139 thru Varactors, See table on page 1-86 1N5157 | 1N5150A Varactor, See table on page 1-86 1N5152A Varactor, See table on page 1-86 IN5153A Varactor, See table on page 1-86 IN5155A Varactor, See table on page 1-86 1N5156 thru Varactors, See table on page 1-86 1N5157 } 1N5158 thru 4-Layer Diodes, See table on Page 1-96 1N5160 1N5163 s Harmonic Generator 1N5181 s R 4000 0.6 0.02 1N5182 s R 5000 0.6 0.02 1N5183 Ss R 7500 0.6 0.02 1N5184 Ss R 10,000 0.6 0.02 1N5197 8 R 50 2.0 0.1 1N5198 Ss R 100 2.0 0.1 1N5199 s R 200 2.0 0.1 1N5200 8 R 400 2.0 0.1 1N5201 s R 600 2.0 O.1 1N5221 8 2-32 ZD 2.4% 10 500M 1N5221A s 2-32 ZD 2.4% 10 500M 1N5221B S 2-32 ZzD 2.4% 5.0 500M 1N5222 s 2-32 zD 2.5* 10 | 500M 1N5222A s 2-32 2D 2.5% 10 500M 1N5222B s 2-32 ZD 2.5% 5.0 500M 1N5223 5 2-32 ZzD 2.7% 10 500M 1N5223A | S 2-32 ZD 2.7% 10 | 500M 1N5223B s 2-32 ZzD 2.7% 5.0 500M 1N5224 8 2-32 ZD 2.8% 10 500M 1N5224A | S 2-32 2D 2.8% 10 | 500M 1N5224B s 2-32 ZD 2.8% 5.0 500M 1N5225 2-32 ZD 3.0% 10 500M 1N5225A | S 2-32 2D 3.0% 10 | 500M 1N5225B s 2-32 ZD 3.0* 5.0 500M 1N5226 8 2-32 ZD 3.3% 10 500M 1N5226A | S 2-32 ZD 3.3% 10 | 500M 1N5226B S 2-32 ZD 3.3% 5.0 500M 1N5227 s 2-32 ZD 3.6% 10 500M 1N5227A 8 2-32 ZD 3.6% 10 500M 1N5227B s 2-32 ZD 3.6% 5.0 500M 1N5228 Ss 2-32 zD 3.9% 10 500M 1N5228A Ss 2-32 ZD 3.9% 10 500M 1N5228B s 2-32 ZD 3.9% 5.0 500M 1N5229 8 2-32 ZD 4.3% 10 500M 1N5229A |] S 2-32 ZD 4.3% 10 | 500M 1N5229B 8 2-32 ZD 4.3% 5.0 500M 1N5230 S 2-32 ZD 47% 10 500M 1N5230A 8 2-32 zD 4.7% 10 500M 1N5230B 8 2-32 ZD 4.7% 5.0 500M 1N5231 S 2-32 zD 5.1* 10 500M 1N5231A 8 2-32 ZzD 5.1% 10 500M 1N5231B s 2-32 ZD 5.1% 5.0 500M 1N5232 8 2-32 ZD 5.6% 10 500M 1N5232A $ 2-32 zD 5.6* 10 500M 1N5232B $ 2-32 ZD 5.6% 5.0 500M 1N5233 s 2-32 zD 6.0* 10 500M 1N5233A Ss 2-32 ZD 6.0% 10 500M 1N5233B | S 2-32 ZD 6.0% 5.0 | 500M 1N5234 s 2-32 ZD 6.2% 10 500M 1N5234A Ss 2-32 zD 6.2% 10 500M R~Rectifier, RDReference Diode, ZDZener Diode, GPGeneral Purpose, HCHigh Conductance (= 20mA @ =1V), HS High Speed Switch (Max ty, < 0.38), CSHigh Conductance, High Speed Switch, MSMedium Speed Switch, PAParametric Amplifier, SP Special Purpose. 1-81