High Voltage MOSFET |XTA/IXTP2N100 IXTA/IXTP 2N100A N-Channel Enhancement Mode D S s Symbol Test Conditions Maximum Ratings Voss T, = 25C to 150C 1000 Vv Voor T, =25C to 150C; R,, = 1 MQ 1000 Vv Vos Continuous +20 Vv Vosm Transient +30 Vv loos T, = 25C 2 A low T, = 25C, pulse width limited by T,,, 8 A P, T, = 25C 100 Ww T, -55 ... +150 C Tw 150 C Toa -55 ... +150 C M, Mounting torque VA3M10 Nemib.in. Weight 4 g Maximum lead temperature for soldering 300 C 1.6 mm (0.062 in.) frorn case for 10s Symbol! Test Conditions Characteristic Values (T, = 25C, unless otherwise specified) min. | typ. | max. Voss Vog = OV, 1, = 250 pA 1000 Vv Vesa Vog = Vag: fp = 250 HA 2 45 V less Veg = 20 Vacs Vos = 0 +100 nA loss Vag = 0-8 * Vice T, = 25C 200 pA Veg = OV T, = 125C 1 mA Rosiont Veg = 10V,1,=0.51,,, 2N100 70 Q 2N100A 60 Q Pulse test, t < 300 ps, duty cycled < 2% IXYS reserves the right to change limits, test conditions and dimansions. Voss loos Posen) 1000V. 2A! 7.0Q 1000 V | 2A! 6.0Q TO-220 AB (IXTP) A D (TAB Gp ) TO-263 SMD (IXTA) G 1D (TAB) s G = Gate, S = Source, D = Drain, TAB = Drain Features * international standard packages * LOW Ros ion; HDMOS process * Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect + Fast switching times Applications * Switch-mode and resonant-mode power supplies * Flyback inverters * DC choppers Advantages * Space savings * High power density 97540(11/97) C2 - 82 1998 iXYS Ali rights reservedSymbol Test Conditions Characteristic Values {T, = 25C, unless otherwise specified) TO-220 AB Outline eh, min. | typ. | max. oy i ort G,, Vig = 10V; 1, = 0.5 * 1, pulse test 15 | 22 Ss ri Die 8 Cc... \ 825 pF 1235 4 | = = - Hf C... | Veg = OV, Vag = 25 V, f= 1 MHz 58 pF + C... 15 pF _ 4 | bony 15) 30 ns ; $l t Ves = 10V, Vi, = 0.5* Vig I = 0.5 I. 15} 35 ns Pins: 4-Gate bom R, = 20Q, (External) 60 80 ns 2-Collector 3- Emitter 4-Coliector Bottom Side t ; 30 55 ns Dim. Millimeter Inches Min. Max. Min. Max. Qeons 40 Ac A 1270 13.97/0500 0550 Q Vos = 10V, Vig = 0.5* Vi 55, 1, = 0.5 I 10 nc B (14.73 16.00 | 0.580 _ 0.630 # as os osst nee Gc |991 106610390 0.420 Q,, 15 onc DO (354 4008/0139 0.161 [585 6.85 10.230 0.270 Rac 1.0 KW Fo 1254 3.16 | 0.100 0.125 G 1415 1.65 | 0.045 0.065 Pack 0.25 KW H | 279 584] 0.110 0.230 J | 064 ~~ ~1.01 [0.025 0.040 K [254 BSC]0100 ssc M [432 4.82/0.170 0.190 Source-Drain Diode Characteristic Values Nj 1441.39 | 0.045 0.055 (T, = 25C, unless otherwise specified) Q | 0.35 ae oeee por Symbol Test Conditions min. | typ. | max. A | 2:26 2.79 | 0.090 _0.15 I, Veg =OV 2 A TO-263 SMD Outline long Repetitive; pulse width limited by T.,, 8 V5 Il Vag = OV, 1.5 Pulse test, t < 300 us, duty cycled < 2 % t, |. = |,. -<di/dt = 100 A/us, V, = 100 V 1000 | ns 1 i iran A H a 1, Gate 2. Collector 3, Emitter 4, Collector Botton Side Dim. Millimeter inches Min. Max.| Min. Max. | Min. Recommended Footprint x] 4.06 4.03) 160 190 Na ne TE (197.18) | (Dimensions in inches and mm) At | 203 279] .080 110 . | b 0.51 0.99] .020 .039 } b2 1.14 1.40 045 .055 i c 046 074] .018 029 3 e2 1.14 1.40 045 055 Ete ee eee oa BD 8.64 985) 340 .380 g oe (38) pt | 711 813] 280 320 [4 O08 (2:03) E 965 1029 380 405 I | L Et 6.86 8.13 .270 = .320 L 0.48 (3.81) 8 2.54 BSC 100 BSC Lane nm! L 14.61 15.38 575 = 625 asso GaP) ui | 228 278] 090 110 L2 1.02 1.40 040 055 L3 1.27 1.78 050 = .070 L4 9 0.38 Oo O15 A 0.46 0.74 Ot& 029 IXYS MOSFETs and IGBTs are covered by one of the following U.S.pafents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 C2 - 83 4,850,072 4,931,844 5,034,706 5,063,307 5,237,481 5,381,025 or,R - Normalized DS(ON) i, - Amperes I, - Amperes [ 1 228C Vos=10V fo ov [ BV i, 7 | Ca "| a a iT 7 L 5V oO L i 4 oi oe el pb i Jot jot 0 5 10 15 20 25 30 Vog - Volts Figure 1. Output Characteristics at 25C 3.5 3.0 T, = 125C 25 2.0 1.6 1.6 0.5 0 1 2 3 4 I, - Amperes Figure 3. R normalized to 0.5 |, value DS(on) 25 TIT 2.0 SN IXTP2N100A 1.5 IXTP2N100 XO T+ YY 0.8 0.9 Ceeeetiserbisritiristivictereitinii ds -50 -25 0 25 50 75 100 125 150 T, - Degrees C Figure 5. Drain Current vs. Case Temperature I, - Amperes hm eee 5V Q 5 10 15 20 25 Vos - Volts Figure 2. Output Characteristics at 125C 30 T Vegz10V 444 i Roson - Normalized nm glhesstoiiitirritiriitiiias 25 50 75 100 125 150 T, - Degrees C Figure 4. R,.,,,, normalized to 0.5 |. value 2.0 15 sf 3 ; T, = 125C | T, = 28C 10 | < + | 'o E 0.5 F L ] ool a va 1 0 2 4 6 8 10 Veg - Volts Figure 6. Admittance Curves C2 - 84 1998 IXYS All rights reserved12 - f 10000 . c Vds= SOV 16 TTA 7 c fg= mA i ih g 8f oe | & 1000 3 = , 8 7 62 Li 100 wn = em naeed| = > = en g 42 / a - | = o 10 2 - 0 7 todo L dob bk i toa oak 1 0 10 20 30 40 ate Charge - nC G 3 Vos - Volts Figure 7. Gate Charge Figure 8. Capacitance Curves 5 [ E | | 40 Ty, = 28C E 4 L. 100 us a f 3 2 E a o 3F a a ims e Ff T, = 125C E < be ' 10 ms e 2 a ca C = 100 ms C T, = 25C 0.1 oc iE 0 rT 4b Jb to 0.01 0.2 0.4 0.6 0.8 1.0 12 4 40 400 4000 Vey- Volts Vos ~ Volts Figure 9. Source Current vs. Source to Drain Voltage Figure10. Forward Bias Safe Operating Area 1 . [ Be oe : mt j D=0.5 : mG aes B - ! : : = D=0.2 _ t a i <x B=07 : : i 90.1 be D=0.05 = + { Nr |. D=0.02 eT faked D = Duty Cycle Pepe Bo Single pulse | po 4 ' 7 0.01 ib 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Figure 11. Transient Thermal Resistance 1998 IXYS All rights reserved C2 -85 ore