TN0106 TN0110 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) VGS(th) (max) TO-92 Die 60V 3.0 2A 2.0V TN0106N3 -- 100V 3.0 2A 2.0V TN0110N3 TN0110ND MIL visual screening available Features Low Threshold DMOS Technology Low threshold -- 2.0V max. These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. High input impedance Low input capacitance -- 50pF typical Fast switching speeds Low on resistance Free from secondary breakdown Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Low input and output leakage Complementary N- and P-channel devices Applications Package Options Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage BVDSS SGD Drain-to-Gate Voltage BVDGS TO-92 Gate-to-Source Voltage 20V Operating and Storage Temperature Soldering Temperature* -55C to +150C 300C * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. 7-35 7 TN0106/TN0110 Thermal Characteristics Package ID (continuous)* TO-92 jc ID (pulsed) Power Dissipation @ TC = 25C C/W 2.0A 1.0W 125 0.5A ja IDR* IDRM 170 0.5A 2.0A C/W * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Parameter Min Drain-to-Source Breakdown Voltage BVDSS TN0110 100 TN0106 60 VGS(th) Gate Threshold Voltage V GS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current Typ 0.6 -3.2 Max ID = 1mA, VGS = 0V 2.0 V VGS = VDS, ID = 0.5mA -5.0 mV/C VGS = VDS, ID = 1.0mA 100 nA VGS = 20V, VDS = 0V 10 ON-State Drain Current 0.75 1.4 2.0 3.4 2.0 4.5 1.6 3.0 RDS(ON) Change in RDS(ON) with Temperature 0.6 1.1 GFS Forward Transconductance CISS Input Capacitance 50 60 COSS Common Source Output Capacitance 25 35 CRSS Reverse Transfer Capacitance 4.0 8.0 td(ON) Turn-ON Delay Time 2.0 5.0 tr Rise Time 3.0 5.0 td(OFF) Turn-OFF Delay Time 6.0 7.0 tf Fall Time 3.0 6.0 VSD Diode Forward Voltage Drop 1.0 1.5 trr Reverse Recovery Time 400 225 VGS = 0V, VDS = Max Rating A VGS = 0V, VDS = 0.8 Max Rating TA = 125C A VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V Static Drain-to-Source ON-State Resistance RDS(ON) Conditions V 500 ID(ON) Unit %/C 400 m Symbol VGS = 4.5V, ID = 250mA VGS = 10V, ID = 500mA ID = 0.5A, VGS = 10V VDS = 25V, ID = 500mA pF VGS = 0V, VDS = 25V f = 1 MHz ns VDD = 25V ID = 1.0A RGEN = 25 V ISD = 0.5A, VGS = 0V ns ISD = 0.5A, VGS = 0V Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 7-36 TN0106/TN0110 Typical Performance Curves Output Characteristics Saturation Characteristics 5 5 4 4 VGS = 10V 3 ID (amperes) ID (amperes) VGS = 10V 8V 2 6V 1 4V 2V 0 0 10 20 30 40 3 8V 2 6V 1 4V 0 2V 50 0 2 4 VDS (volts) 6 8 10 VDS (volts) Power Dissipation vs. Case Temperature Transconductance vs. Drain Current 0.5 10 TA = -55C 0.4 8 0.3 PD (watts) GFS (siemens) TA = 25C TA = 150C 0.2 0.1 6 4 2 VDS = 25V TO-92 0 0 0 .6 1.2 1.8 2.4 0 3.0 25 50 125 100 150 Thermal Response Characteristics Maximum Rated Safe Operating Area 10 Thermal Resistance (normalized) 1.0 TC = 25C TO-92 (pulsed) ID (amperes) 75 TC ( C) ID (amperes) 1.0 TO-92 (DC) 0.1 0.8 0.6 0.4 TO-92 TC = 25C PD = 1W 0.2 0 0.01 1 10 100 0.001 1000 VDS (volts) 0.01 0.1 tp (seconds) 7-37 1 10 7 TN0106/TN0110 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 1.3 5.0 VGS = 5V 4.0 RDS(ON) (ohms) 1.1 1.0 3.0 2.0 1.0 0.9 0 0.8 -50 0 50 100 150 1.0 0 5.0 ID (amperes) Transfer Characteristics V(th) and RDS Variation with Temperature 1.4 3.0 VDS = 25V TA = -55C 1.4 V(th)@ 0.5mA 1.2 VGS(th) (normalized) 2.4 ID (amperes) 4.0 3.0 2.0 Tj ( C) 25C 1.8 150C 1.2 0.6 0 1.0 1.2 1.0 RDS(ON) @ 10V, 0.5A 0.8 0.8 0.6 0.6 0.4 0 2 4 6 8 10 0.4 -50 0 50 100 150 Tj ( C) VGS (volts) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 10 100 f = 1MHz VDS = 10V 8 55pF VGS (volts) C (picofarads) 75 CISS 50 40V 6 4 COSS 25 2 CRSS 50pF 0 0 0 10 20 30 40 0 1.0 2.0 3.0 QG (nanocoulombs) VDS (volts) 7-38 4.0 5.0 RDS(ON) (normalized) BVDSS (normalized) 1.2 VGS = 10V