Semiconductor Group 1 12.96
BRT 11, BRT 12, BRT 13
SITAC AC Switches
Without Zero Voltage Switch
• AC switch without zero-voltage detector
• Electrically insulated between input and output circuit
• Microcomputer-compatible by very low trigger current
• UL-tested (file no. E 52744), code letter "J"
• Available with the following options:
Option 1: VDE 0884-approved
Option 6: Pins in 10.16 mm spacing
Option 7: Pins for sourface mounting
Type Opt.
V
DRM
I
TRMS Ordering CodeMarkingd
v
/d
t
cr
I
FT C67079-A1000-A6
BRT 11 H10 kV/µs2 mA300 mA400 V-
BRT 11 H
BRT 11 M 400 V- 300 mA 10 kV/µs C67079-A1000-A10
BRT 11 M3 mA10 kV/µs
BRT 12 H -300 mA 2 mA600 V BRT 12 H C67079-A1001-A6
BRT 12 H 2 mABRT 12 H C67079-A1041-A5
300 mA600 V1 10 kV/µs
600 V6
BRT 12 H BRT 12 H300 mA C67079-A1041-A8
10 kV/µs2 mA
BRT 12 H 300 mA 10 kV/µs C67079-A1041-A11
BRT 12 H2 mA600 V7
BRT 12 H 1 + 6 300 mA600 V BRT 12 H C67079-A1041-A14
10 kV/µs2 mA
C67079-A1001-A10
BRT 12 M10 kV/µs3 mA300 mA600 V-
BRT 12 M
BRT 12 M 13 mA300 mA600 V 10 kV/µs C67079-A1041-A6
BRT 12 M
2 mA10 kV/µs BRT 13 H- 800 V
BRT 13 H C67079-A1002-A6
300 mA
BRT 13 H 10 kV/µs C67079-A1042-A8
BRT 13 H6 300 mA800 V 2 mA
800 V
BRT 13 H 300 mA 2 mABRT 13 H7 C67079-A1042-A11
10 kV/µs
C67079-A1002-A10BRT 13 M -800 V 300 mA 3 mA10 kV/µs BRT 13 M
Information Package Pin Configuration
1 2 3 4 5 6
50 pcs per tube P-DIP-6 Anode Kathode not
connected A1 do not
connect A2
Cathode
Semiconductor Group 2 12.96
BRT 11, BRT 12, BRT 13
Maximum Ratings, at Tj = 25 °C, unless otherwise specified.
AC Switch
Parameter Symbol Value Unit
Max. Power dissipation 630 mW
P
tot
Chip or operating temperature °C
T
j-40 ...+ 100
Storage temperature -40 ...+ 150
T
stg
Insulation test voltage 1)
between input/output circuit
(climate in acc. with DIN 40046, part2, Nov.74)
V
IS
V
RMS
5300
Reference voltage in acc. with VDE 0110 b
(insulation group C)
V
ref
V
RMS
V
DC
500
600
Creepage tracking resistance
(in acc. with DIN IEC 112/VDE 0303, part 1)
C
TI (group IIIa
acc. to DIN
VDE 0109)
175
R
is
Insulation resistance
V
IO = 500 V,
T
A = 25 °C
V
IO = 500 V,
T
A = 100 °C
≥ 10 12
≥ 10 11
Ω
DIN humidity category, DIN 40 040 -F -
Creepage distance (input/output circuit) - ≥ 7.2 mm
Clearance (input/output circuit) - ≥ 7.2
Input Circuit
Parameter Symbol UnitValue
Param VR
V
R6 V
Continuous forward current
I
FmA20
1.5
Surge forward current,
I
FSM(I) A
Max. power dissipation, t ≤ 10 µs
P
tot 30 mW
Output Circuit
Parameter Symbol BRT
12 UnitBRT
13
BRT
11
V
Repetitive peak off-state voltage
V
DRM 400 600 800
RMS on-state current
I
TRMS 300 mA
Single cycle surge current (50 Hz)
I
TSM(I) 3 A
Max. power dissipation
P
tot 600 mW
T
j
,
t
≤ 10 µs
Semiconductor Group 3 12.96
BRT 11, BRT 12, BRT 13
Characteristics
at Tj = 25 °C, unless otherwise specified.
Input Circuit
Parameter ValuesSymbol Unit
typ. max.min.
Forward Voltage,
I
F = 10 mA
V
F1.1 V1.35-
- - 10
I
R
Reverse current,
V
R = 6 V µA
Thermal resistance 2)
junction - ambient
R
thJA - - 750 K/W
Output Circuit
Parameter Symbol Values Unit
min. typ. max.
Critical rate of rise of off-state voltage
V
D = 0.67
V
DRM,
T
j = 25 °C
V
D = 0.67
V
DRM,
T
j = 80 °C
d
v
/d
t
cr
-
-
kV/µs
-
-
10
5
10
5
d
v
/d
t
crq
-
-
-
-
Critical rate of rise of voltage at current
communication
V
D = 0.67
V
DRM,
T
j = 25 °C, d
i
/d
t
crq ≤ 15 A/ms
V
D = 0.67
V
DRM,
T
j = 80 °C, d
i
/d
t
crq ≤ 15 A/ms
Critical rate of rise of on-state current d
i
/d
t
cr -8 A/µs-
Pulse current
t
p ≤ 5 µs,
f
= 100 , d
i
tp/d
t
≤ 8 A/µs
I
tp - A2-
On-state voltage,
I
T = 300 mA V
V
T- 2.3-
I
D-Off-state current
T
C = 100 °C,
V
DRM =
V
DRM 0.5 100 µA
Holding current,
V
D = 10 V
I
H50080-
Thermal resistance 2)
junction - ambient
R
thJA - - 125 K/W
T
j
commutation
t
p
≤ 5 µs,
f
= 100 Hz, d
i
tp/d
t
≤ 8 A/µs
Semiconductor Group 4 12.96
BRT 11, BRT 12, BRT 13
Response Characteristics
at
T
j = 25 °C, unless otherwise specified.
Parameter ValuesSymbol Unit
max.typ.min.
Trigger current
V
D = 10 V
type H
type M
0.4
0.8
I
FT
-
-
mA
2
3
14 µA/K
∆
I
FT/∆
T
j-
Trigger current temperature gradient 72
Capacitance between input and output circuit
V
R = 0 V,
f
= 1 kHz
C
IO -pF-
1) Test AC voltage in acc. with DIN 57883, June 1980
2) Static air, SITAC soldered in pcb or base plate.
3) The SITAC switch is soldered in pcb or base plate.
4) Thermocouple measurement has to be performed potentially separated to A1 and A2. The measuring
junction should be as near as possible at the case.
Semiconductor Group 5 12.96
BRT 11, BRT 12, BRT 13
Characteristics
at Tj = 25 °C, unless otherwise specified.
Typical input characteristics
I
F = ƒ(
V
F)Typical output characteristics
I
T = ƒ(
V
T)
Current reduction
I
TRMS = ƒ(
T
PIN5)
R
thJ-PIN5 = 16,5 K/W 4)
Current reduction
I
TRMS = ƒ(
T
A)
R
thJA = 125 K/W 3)
T
j
Semiconductor Group 6 12.96
BRT 11, BRT 12, BRT 13
Typical trigger delay time
t
gd =
f
(
I
F/
I
FT25°C)
V
D = 200V Power dissipation for 40 ... 60 Hz
line operation
P
tot = ƒ(
I
TRMS)
Pulse trigger current
I
FTN =
f
(
t
pIF)
I
FTN normalized to
I
FT refering to
t
pIF ≥ 1 ms
V
op = 220 V,
f
= 40 ... 60 Hz typ.
Typical off-state current
I
D =
f
(
T
j)
V
D = 800V