2SC3668
2009-12-21
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3668
Power Amplifier Applications
Power Switching Applications
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
High collector power dissipation: PC = 1000 mW
High-speed switching: tstg = 1.0 μ (typ.)
Complementary to 2SA1428.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 50 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 2 A
Base current IB 0.5 A
Collector power dissipation PC 1000 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg 55 to 150 °C
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA 2-7D101A
Weight: 0.2 g (typ.)
2SC3668
2009-12-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 50 V, IE = 0 1.0 μA
Emitter cut-off current IEBO V
EB = 5 V, IC = 0 1.0 μA
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 V
hFE (1)
(Note 2) VCE = 2 V, IC = 0.5 A 70 240
DC current gain
hFE (2) V
CE = 2 V, IC = 1.5 A 40
Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 0.05 A 0.5 V
Base-emitter saturation voltage VBE (sat) I
C = 1 A, IB = 0.05 A 1.2 V
Transition frequency fT V
CE = 2 V, IC = 0.5 A 100 MHz
Collector output capacitance Cob V
CB = 10 V, IC = 0, f = 1 MHz 30 pF
Turn-on time ton 0.1
Storage time tstg 1.0
Switching time
Fall time tf
IB1 = 0.05 A,IB2 = 0.05 A
duty cycle 1%
0.1
μs
Note 2: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
Note 3: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
IB1
20 μs
VCC = 30 V
Output
30 Ω
IB2
IB1
Input
IB2
0
C3668
Lot No.
Note 3
Characteristics
indicator
Part No. (or abbreviation code)
2SC3668
2009-12-21
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Collector current IC (A)
VCE – IC
Collector current IC (A)
VCE – IC
Collector-emitter voltage VCE (V)
)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
Collector current IC (A)
VCE – IC
Collector-emitter voltage VCE (V)
Collector current IC (A)
hFE – IC
DC current gain hFE
Collector-emitter voltage VCE (V)
Collector current IC (A)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
1.0
0
0
0.8
0.6
0.4
0.2
0.4 0.8 1.2 1.6 2.0 2.4
IB = 5 mA 10 20
30
40
Common emitter
Ta = 25° C
1.0
0
0
0.8
0.6
0.4
0.2
0.4 0.8 1.2 1.6 2.0 2.4
IB = 5 mA 10 20
30
40
Common emitter
Ta = 100°C
10
0.01
1000
Ta = 100°C
25
0.03 0.1 0.3 1
30
50
100
500
Common emitter
VCE = 2 V
55
300
2.4
0
0
1.6
1.2
0.8
0.4
2 4 6 8 10 12
Common emitter
Ta = 25°C
20
15
12
0
IB = 2 mA
25
14
2.0
10
8
6
4
18
1.0
0
0
0.8
0.6
0.4
0.2
0.4 0.8 1.2 1.6 2.0 2.4
IB = 5 mA 10 20 30
40
Common emitter
Ta = 55°C
50
0.02
0.01 0.03 0.1 0.3 1
0.5
1
Common emitter
IC/IB = 20
Ta = 100°C
25
55
0.3
0.05
0.1
2SC3668
2009-12-21
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Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
Ambient temperature Ta (°C)
PC – Ta
Collector dissipation PC (W)
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector current IC (A)
Collector current IC (A)
VBE (sat) – IC
Base-emitter saturation voltage
VBE (sat) (V)
0
0
0.2
0.4
0.6
0.8
1.0
1.2
20 40 60 100 120 140 160 80
0.1
0.01 0.03 0.1 0.3 1
0.3
0.5
3
5
Ta = 55°C
25
Common emitter
IC/IB = 20
100
2
1
5
0
2.0
0.4
0.5
1.0
1.5
0.8 1.2 1.6 2.0
Common emitter
VCE = 2 V
25Ta = 100°C 55
0
0.003
0.005
0.01
0.03
0.05
0.1
0.3
0.5
1
3
0.3 1 3 10 30
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature
IC max
(continuous)
IC max (pulsed)*
1 ms*
10 ms*
100 ms*
DC operation
Ta = 25°C
1 s*
100 0.1
VCEO max
2SC3668
2009-12-21
5
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