ky SGS-THOMSON MICROELECTRONICS 1N 248 B 1N 250 B 1N 1195 A -~ 1N 1198 A RN 820/RN 1120 RECTIFIER DIODES a STANDARD RECTIFIER e HIGH SURGE CURRENT CAPABILITY a LOW FORWARD VOLTAGE DROP DO5 (Metal) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit le (avy Average Forward Current* To = 150C 20 A tesm Surge non Repetitive Forward Current tp = 10ms 450 A Sinusoidal Prot Power Dissipation* To = 150C 25 Ww Tstg Storage and Junction Temperature Range 55 to 175 C Tj ; P 1N RN Uni Symbo arameter 248B | 2496 | 250B [11954|1196A|1197A/1198A| 820 [1120 | Ut VaaM Repetitive Peak 50 100 | 200 | 300 | 400 | 500 | 600 | 800 | 1000 Vv Reverse Voltage THERMAL RESISTANCE Symbol Parameter Value Unit Rth q-c) | Junction-case 1 C/W ELECTRICAL CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit la T, = 150C Va = VarRM 5 mA Ve Tj = 25C Ip = 70A 1.5 Vv * Single phase, half wave, resistive or inductive load July 1989 1/2 3311N 248 B > 1N 250 B/1N 1195 A> 1N 1198 A/RN 820/RN 1120 PACKAGE MECHANICAL DATA DO 5 Metal 10,72 2.93 V4 17,46 over flats 6 sided 16,94 max. Cooling method : by conduction (method C) Marking : Cathode connected to case : type number Anode connected to case : type number + suffix R (consult us for these reverse version datasheets) Weight : 18.849 Recommended torque value ; 250cm. N Maximum torque value : 310cm. N 2/2 & SGS-THOMSON a2 JF incrorectRomes