2005-11-17
1
BFS17W
12
3
NPN Silicon RF Transistor
• For broadband amplifiers up to 1 GHz at
collector currents from 1 mA to 20 mA
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFS17W MCs 1 = B 2 = E 3 = C SOT323
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 15 V
Collector-base voltage VCBO 25
Emitter-base voltage VEBO 2.5
Collector current IC25 mA
Peak collector current, f = 10 MHz ICM 50
Total power dissipation1)
TS ≤ 93 °C Ptot 280 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS ≤ 205 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
2005-11-17
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BFS17W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 15 - - V
Collector-base cutoff current
VCB = 10 V, IE = 0
VCB = 25 V, IE = 0
ICBO
-
-
-
-
0.05
10
µA
Emitter-base cutoff current
VEB = 2.5 V, IC = 0 IEBO - - 100
DC current gain-
IC = 2 mA, VCE = 1 V, pulse measured
IC = 25 mA, VCE = 1 V, pulse measured
hFE
40
20
-
70
150
-
-
Collector-emitter saturation voltage
IC = 10 mA, IB = 1 mA VCEsat - 0.1 0.4 V
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BFS17W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 2 mA, VCE = 5 V, f = 200 MHz
IC = 25 mA, VCE = 5 V, f = 200 MHz
fT
1
1.3
1.4
2.5
-
-
GHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.55 0.8 pF
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.3 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.9 1.45
Noise figure
IC = 2 mA, VCE = 5 V, ZS = 50 Ω,
f = 800 MHz
F- 3.5 5 dB
Transducer gain
IC = 20 mA, VCE = 5 V, ZS = ZL = 50Ω,
f = 500 MHz
|S21e|2- 14 - dB
Third order intercept point at output
VCE = 5 V, IC = 20 mA, f = 800 MHz,
ZS = ZSopt, ZL = ZLopt
IP3- 22.5 - dBm
1dB Compression point
IC = 20 mA, VCE = 5 V, ZS = ZL = 50Ω,
f = 800 MHz
P-1dB - 11 - -
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BFS17W
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
40
80
120
160
200
240
mW
320
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
stp
0
10
1
10
2
10
3
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
f = 1 MHz
0 2 4 6 8 10 12 14 16 V20
VCB, VEB
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
pF
1.2
CCB, CEB
CCB
CEB
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BFS17W
Transition frequency fT= ƒ(IC)
VCE = parameter
0 5 10 15 20 mA 30
IC
0
0.5
1
1.5
2
GHz
3
fT
10V
5V
3V
2V
1V
0.7V
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BFS17W
Package SOT323
Package Outline
Foot Print
Marking Layout
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15
+0.1
-0.05
0.3
+0.1
±0.1
0.9
12
3A
±0.2
2
-0.05
0.650.65
M
3x 0.1
0.1 MIN.
0.1
M
0.2 A
0.2
4
2.15 1.1
8
2.3
Pin 1
Pin 1
Manufacturer
Date code (Year/Month)
Type code
2005, June
BCR108W
Example
0.6
0.8
1.6
0.65 0.65
2005-11-17
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BFS17W
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
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Life support devices or systems are intended to be implanted in the human body, or
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