KBP200 – KBP2010 1 of 4 © 2006 Won-Top Electronics
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KBP200 – KBP2010
2.0A SINGLE-PHASE BRIDGE RECTIFIER
Features
! Diffused Junction
! Low Forward Voltage Drop A L
! High Current Capability
! High Reliability
! High Surge Current Capability J B
! Ideal for Printed Circuit Boards - ~ ~ +
! Recognized File # E157705
K C
Mechanical Data
! Case: KBP, Molded Plastic I H
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208 E G
! Polarity: As Marked on Body
! Weight: 1.7 grams (approx.) D
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capaciti ve load, derate current by 20%.
Characteristic Symbol KBP
200 KBP
201 KBP
202 KBP
204 KBP
206 KBP
208 KBP
2010 Unit
Peak Repetit i ve Revers e Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR50 100 200 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V
Average Rectified Output Current @TA = 55°C IO2.0 A
Non-Repetiti ve P eak Forward Surge Current
8.3ms Si ngl e half sine-wave superimposed on
rated load (JEDE C Method) IFSM 60 A
Forward Voltage per leg @IF = 2.0A VFM 1.1 V
Peak Reverse Current @T
A = 25°C
At Rated DC Blocking Voltage @TA = 125°C IRM 5.0
500 µA
Rating for Fusing (t<8.3ms) I2t15 A2s
Typi cal Junction Capacitanc e per leg (Note 1) Cj25 pF
Typi cal Thermal Resistance per leg (Note 2) RJA
RJL 30
11 °C/W
Operating and Storage Temperature Range Tj, TSTG -55 to +165 °C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Mounted on PC board with 12mm2 copper pad.
WTE
POWER SEMICONDUCTORS
KBP
Dim Min Max
A14.22 15.24
B10.67 11.68
C15.20 —
D4.57 5.08
E3.60 4.10
G1.00 1.40
H0.76 0.86
I1.52 —
J11.68 12.70
K12.7 —
L3.2 x 45° Typical
All Dimensions in mm