Feb. 2009
1
C1
E2
C2E1
E2 G2
LABEL
3-M5 NUTS
2-φ6.5 MOUNTING HOLES
TAB #110. t=0.5
17
48
13
94
232317
29
+1.0
–0.5
21.2 7.5
16 7 16 7 16
80±
0.25
4184
12 12 12
E1G1
4
20
(14)
C2E1
E2
E2 G2G1 E1
C1
CIRCUIT DIAGRAM
Tc measured point (Base plate)
CM200DY-12NF
APPLICATION
General purpose inverters & Servo controls, etc
MITSUBISHI IGBT MODULES
CM200DY-12NF
HIGH POWER SWITCHING USE
¡IC ...................................................................200A
¡VCES ............................................................ 600V
¡Insulated Type
¡2-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Feb. 2009
2
VCE = VCES, VGE = 0V
±VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 125°C
VCC = 300V, IC = 200A, VGE = 15V
VCC = 300V, IC = 200A
VGE = ±15V
RG = 3.1Ω, Inductive load
IE = 200A
IE = 200A, VGE = 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound Applied
*2
(1/2 module)
Case temperature measured point is just under the chips
IC = 20mA, VCE = 10V
IC = 200A, VGE = 15V
VCE = 10V
VGE = 0V
600
±20
200
400
200
400
650
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
MITSUBISHI IGBT MODULES
CM200DY-12NF
HIGH POWER SWITCHING USE
V
V
A
A
A
A
W
°C
°C
Vrms
N • m
N • m
g
1
0.5
2.2
—
30
3.7
1.2
—
120
120
300
300
150
—
2.6
0.19
0.35
—
0.13*3
31
mA
µA
nF
nF
nF
nC
ns
ns
ns
ns
µC
V
K/W
K/W
K/W
K/W
Ω
—
—
1.7
1.7
—
—
—
800
—
—
—
—
—
3.5
—
—
—
0.07
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.1
6V
V
57.5
ns
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance
External gate resistance
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance*1
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Note 1
)
Qrr (
Note 1
)
VEC(
Note 1
)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
RG
Symbol Parameter
VGE(th)
VCE(sat)
*1 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING.
*2 : Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
*3 : Case temperature (Tc’) measured point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
DC, TC’ = 93°C*3
Pulse (Note 2)
Pulse (Note 2)
TC = 25°C
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
Symbol Parameter
Collector current
Emitter current
Torque strength
Conditions UnitRatings
VCES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
Tj
Tstg
Viso
—
—
—
Unit
Typ.
Limits
Min. Max.
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Test conditions
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM200DY-12NF
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
400
300
100
200
0046810
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Tj = 25°C
12
11
10
9
VGE =
20V
2
15
13
8
4
3
2
1
00 200 400300
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR CURRENT I
C
(A)
VGE = 15V
Tj = 25°C
Tj = 125°C
100
10
8
6
4
2
02012 146810 16 18
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
Tj = 25°C
IC = 400A
IC = 200A
IC = 80A
10
1
2
3
5
7
10
2
2
3
5
7
10
3
012 435
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT IE (A)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
Tj = 25°C
Tj = 125°C
10
–1
10
0
10
–1
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
2
10
0
357 2
10
1
357 2
10
2
357
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Cies
Coes
Cres
VGE = 0V 10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
10
1
10
2
57
10
3
23 5723
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIME (ns)
COLLECTOR CURRENT I
C
(A)
Conditions:
VCC = 300V
VGE = ±15V
RG = 3.1Ω
Tj = 125°C
Inductive load
td(off)
td(on)
tf
tr
Feb. 2009
4
MITSUBISHI IGBT MODULES
CM200DY-12NF
HIGH POWER SWITCHING USE
10
1
10
2
23 57
10
3
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
trr
Irr
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT IE (A)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
Conditions:
VCC = 300V
VGE = ±15V
RG = 3.1Ω
Tj = 25°C
Inductive load 10
–3
10–5 10–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
10–3
23 57 23 57 23 57 23 57
101
10–2 10–1 100
10–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
23 57 23 57
Single Pulse
TC = 25°C
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
TIME (s)
IGBT part:
Per unit base =
R
th(j–c)
= 0.19K/W
FWDi part:
Per unit base =
R
th(j–c)
= 0.35K/W
0
4
8
16
12
20
0 400200 800 12001000600
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
GATE CHARGE Q
G
(nC)
VCC = 300V
VCC = 200V
IC = 200A
