2SC458, 2SC2308 Silicon NPN Epitaxial REJ03G0681-0200 (Previous ADE-208-1043) Rev.2.00 Aug.10.2005 Application * Low frequency amplifier * Complementary pair with 2SA1029 and 2SA1030 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Rev.2.00 Aug 10, 2005 page 1 of 6 Symbol VCBO VCEO VEBO IC IE PC 2SC458 30 30 5 100 -100 200 2SC2308 55 50 5 100 -100 200 Unit V V V mA mA mW Tj Tstg 150 -55 to +150 150 -55 to +150 C C 2SC458, 2SC2308 Electrical Characteristics (Ta = 25C) Collector to base breakdown voltage V(BR)CBO Min 30 2SC458 Typ -- Collector to emitter breakdown voltage V(BR)CEO 30 -- -- 50 -- -- V IC = 1 mA, RBE = Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio V(BR)EBO 5 -- -- 5 -- -- V IE = 10 A, IC = 0 ICBO IEBO hFE*1 VCE(sat) -- -- -- -- 0.5 0.5 500 0.2 -- -- 160 -- -- -- -- -- 0.5 0.5 320 0.2 A A Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product -- -- 100 -- V VCB =18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA VBE fT -- -- 0.67 230 0.75 -- -- -- 0.67 230 0.75 -- V MHz VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA Cob -- 1.8 3.5 -- 1.8 3.5 pF VCB = 10 V, IE = 0, f = 1 MHz NF -- 4 10 -- 4 10 dB VCE = 6 V, IC = 0.1 mA, f = 1 kHz, Rg = 500 Small signal input impedance hie -- 16.5 -- -- 16.5 -- k VCE = 5V, IC = 0.1mA, f = 270 Hz Small signal voltage feedback ratio hre -- 70 -- -- 70 -- x 10-6 Small signal current transfer ratio hfe -- 130 -- -- 130 -- -- -- 11.0 -- Item Collector output capacitance Noise figure Symbol -- 11.0 hoe Small signal output admittance Note: 1. The 2SC458 is grouped by hFE as follows. B C D 2SC458 100 to 200 160 to 320 250 to 500 Rev.2.00 Aug 10, 2005 page 2 of 6 Max -- 2SC2308 Min Typ Max 55 -- -- Unit V S Test conditions IC = 10 A, IE = 0 2SC458, 2SC2308 Main Characteristics Typical Output Characteristics P 10 300 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 200 100 20 0m W 40 6 30 4 20 10 A 2 IB = 0 0 50 100 150 0 5 10 15 20 25 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics 300 DC Current Transfer Ratio hFE 5 Collector Current IC (mA) = 50 8 Ambient Temperature Ta (C) VCE = 12 V 4 3 2 1 0 0.2 0.4 0.6 0.8 VCE = 12 V 100 Base to Emitter Voltage VBE (V) f = 270 Hz VCE = 12 V 200 100 0.3 1.0 3 10 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 6 0.3 1.0 3 10 30 Base to Emitter Voltage vs. Ambient Temperature 300 0.1 0.1 Collector Current IC (mA) Small Signal Current Transfer Ratio vs. Collector Current 0 0.03 5C 25 0 0.03 1.0 7 Ta = 200 Base to Emitter Voltage VBE (V) Small Signal Current Transfer Ratio hfe C 60 30 0.9 VCE = 12 V IC = 2 mA 0.8 0.7 0.6 0.5 0.4 -20 0 20 40 60 Ambient Temperature Ta (C) 80 2SC458, 2SC2308 Emitter Input Capacitance vs. Emitter to Base Voltage 5 Emitter Input Capacitance Cib (pF) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz 4 3 2 1 0 4 8 12 16 5 IC = 0 f = 1 MHz 4 3 2 1 0 20 2 8 Contours of Constant Noise Figure Contours of Constant Noise Figure 10 10 14 12 5 10 2 NF = 1dB 8 2 1.0 6 3 0.5 4 0.2 VCE = 6 V f = 120 Hz 6 8 0.1 0.05 0.1 0.2 0.5 1.0 2.0 4 2 3 NF = 0.5 dB 1.0 1.0 0.5 2 0.2 3 4 0.1 8 0.05 0.1 NF 1.0 =0 1 .5 d Noise Figure NF (dB) 1 2 B 0.5 2 0.2 1.0 2.0 20 2 VCE = 6 V f = 10 kHz 0.5 Noise Figure vs. Frequency 4 5 0.2 Collector Current IC (mA) Contours of Constant Noise Figure 10 10 8 5 VCE = 6 V f = 1 kHz Collector Current IC (mA) Signal Source Resistance Rg (k) 6 Emitter to Base Voltage VEB (V) Signal Source Resistance Rg (k) Signal Source Resistance Rg (k) Collector to Base Voltage VCB (V) 4 16 IC = 0.1 mA Rg = 500 VCE = 6 V 12 8 4 4 0.1 0.05 0.1 0.2 0.5 1.0 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 4 of 6 2.0 0 30 100 300 1k 3k Frequency f (Hz) 10k 30k 2SC458, 2SC2308 Noise Figure NF (dB) 8 IC = 0.1 mA Rg = 500 f = 1kHz 6 4 2 0 1 2 5 10 20 30 Collector to Emitter Voltage VCE (V) Percentage of Relative to VCE = 5V h Parameter vs. Collector to Emitter Voltage 1.8 IC = 0.1 mA f = 270 Hz 1.6 hre 1.4 hoe 1.2 hoe 1.0 hfe hfe hie hre hie 0.8 0.5 1.0 2 5 10 20 Collector to Emitter Voltage VCE (V) Rev.2.00 Aug 10, 2005 page 5 of 6 h Parameter vs. Collector Current Percentage of Relative to IC = 0.1mA Noise Figure vs. Collector to Emitter Voltage 100 50 20 VCE = 6 V 10 f = 270 Hz 5 hie 2 h h 1.0 fe re 0.5 h hoe hre hfe oe 0.2 0.1 0.05 hie 0.02 0.01 0.010.02 0.05 0.1 0.2 0.5 1.0 2 5 10 Collector Current IC (mA) 2SC458, 2SC2308 Package Dimensions JEITA Package Code RENESAS Code SC-43A PRSS0003DA-A Package Name MASS[Typ.] TO-92(1) / TO-92(1)V Unit: mm 0.25g 4.8 0.3 2.3 Max 0.7 0.60 Max 0.55 Max 12.7 Min 5.0 0.2 3.8 0.3 0.5 Max 1.27 2.54 Ordering Information Part Name 2SC458BTZ 2SC458CTZ 2SC458DTZ 2SC2308CTZ Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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