A Business Partner of Renesas Electronics Corporation. NV4V41SF Data Sheet Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source R08DS0064EJ0200 Rev.2.00 Jun 20, 2013 DESCRIPTION The NV4V41SF is a high output blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure achieves a high optical power output of 600 mW (CW). FEATURES * * * * * High optical output power Peak wavelength Multi transverse mode (lateral) Operating temperature range 5.6 mm CAN package Po = 600 mW @CW p = 400 to 405 nm TC = 0 to +30C APPLICATIONS * Blue-violet laser light source * Light source for Laser Direct Imaging system * Light source for industrial manufacturing equipment The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R08DS0064EJ0200 Rev.2.00 Jun 20, 2013 Page 1 of 7 A Business Partner of Renesas Electronics Corporation. NV4V41SF PACKAGE DIMENSIONS (UNIT: mm) 902 1.60.2 1.00.15 CAP GLASS 0.40.1 X Y 0.40.1 5.60.1 4.5 MAX. LD CHIP 3.550.1 Z 1.30.08 6.50.5 1.20.1 2.30.3 <R> 0.5 MIN. STEM REFERENCE PLAIN 3- 0.450.1 P.C.D. 2.00.2 1 1 3 LD 2 3 (Stem GND) 2 BOTTOM VIEW Remark PIN CONNECTIONS Cap glass thickness : 0.250.03 mm Cap glass refractive index : 1.53 ( = 405 nm) R08DS0064EJ0200 Rev.2.00 Jun 20, 2013 Page 2 of 7 A Business Partner of Renesas Electronics Corporation. NV4V41SF <R> ORDERING INFORMATION Part Number NV4V41SF Order Number NV4V41SF-A Rank HV XV Packing Style Tray Packing (100 p/Tray), With data Individual Packing (for samples), With data ABSOLUTE MAXIMUM RATINGS (TC = 25C, unless otherwise specified) Parameter Optical Output Power (CW) Reverse Voltage of LD Operating Case Temperature Storage Temperature Symbol Po VR TC Tstg Ratings 700 2 0 to +30 -40 to +85 Unit mW V C C RECOMMENDED OPERATING CONDITIONS (TC = 25C, unless otherwise specified) Parameter Optical Output Power (CW) Symbol Po MAX. 600 Unit mW ELECTRO-OPTICAL CHARACTERISTICS (TC = 25C, unless otherwise specified) Parameter Threshold Current Operating Current Operating Voltage Slope Efficiency Peak Wavelength Beam Divergence (lateral) Beam Divergence (vertical) Position Accuracy Angle (vertical) R08DS0064EJ0200 Rev.2.00 Jun 20, 2013 Symbol Ith Iop Vop d p // Conditions CW CW, Po = 600 mW CW, Po = 600 mW CW, Po = 100 mW, 600 mW CW, Po = 600 mW CW, Po = 600 mW (1/e2) CW, Po = 600 mW MIN. 1.0 400 10 35 -5 TYP. 140 500 4.1 1.7 - 16 40 - MAX. 180 600 4.6 405 22 50 5 Unit mA mA V W/A nm deg. deg. Page 3 of 7 A Business Partner of Renesas Electronics Corporation. NV4V41SF TYPICAL CHARACTERISTICS (TC = 25C, unless otherwise specified) OPTICAL OUTPUT POWER vs. FORWARD CURRENT FORWARD VOLTAGE vs. FORWARD CURRENT 6 10C 20C 30C 40C 600 500 400 300 200 4 3 2 1 100 0 10C 20C 30C 40C 5 Forward Voltage VF (V) Optical Output Power PO (mW) 700 0 100 200 300 400 500 600 0 700 0 100 200 Forward Current IF (mA) 400 600 700 TEMPERATURE DEPENDENCE OF PEAK WAVELENGTH 406 406 25C N= 5 405 Peak Wavelength p (nm) 405 404 403 402 401 600 mW N= 5 404 403 402 401 400 400 0.079 nm/C 0.0038 nm/mW 399 500 Forward Current IF (mA) POWER DEPENDENCE OF PEAK WAVELENGTH Peak Wavelength p (nm) 300 0 200 400 600 399 0 800 10 20 30 40 Optical Output Power PO (mW) Temperature (C) FFP (LATERAL) FFP (VERTICAL) 600 mW Relative Intensity 600 mW Relative Intensity 50 400 mW 400 mW 200 mW 200 mW -30 -20 -10 0 10 20 30 Beam Divergence (degrees) -40 -30 -20 -10 0 10 20 30 40 Beam Divergence (degrees) Remark The graphs indicate nominal characteristics. R08DS0064EJ0200 Rev.2.00 Jun 20, 2013 Page 4 of 7 A Business Partner of Renesas Electronics Corporation. NV4V41SF Wavelength Spectrum 1.2 Relative Intensity 1.0 0.8 10C 25C 40C 600 mW 0.6 0.4 0.2 0 400 401 403 404 405 406 Wavelength (nm) Remark The graphs indicate nominal characteristics. R08DS0064EJ0200 Rev.2.00 Jun 20, 2013 Page 5 of 7 A Business Partner of Renesas Electronics Corporation. NV4V41SF NOTES ON HANDLING (UNIT: mm) 1. Recommended soldering conditions * Peak Temperature 350C * Time 3 seconds * Soldering of leads should be made at the point 2.0 mm from the root of the lead * This device cannot be mounted using reflow soldering. 2. Usage cautions (1) Take the following steps to ensure that the device is not damaged by static electricity. * Wear an antistatic wrist strap when soldering the device. We recommend a strap with a 1 M resistor. * Make sure that the work table and soldering iron are grounded. * Make sure that the soldering iron does not leak. (2) Do not subject the package to undue stress. The package has a tensile strength of 1N or less. Do not exceed this rating. Also, avoid bending the leads as much as possible. If the leads must be bent, bend them only once, making sure to anchor the stem base of the lead. (3) Do not allow the cap glass of the package to become scratched or dirty. Also, do not subject the cap glass to external force. (4) Be sure to attach a heat sink to sufficiently dissipate heat. (5) Use the device as soon as possible after opening the bag. R08DS0064EJ0200 Rev.2.00 Jun 20, 2013 Page 6 of 7 A Business Partner of Renesas Electronics Corporation. NV4V41SF SAFETY INFORMATION ON THIS PRODUCT DANGER SEMICONDUCTOR LASER VISIBLE LASER RADIATION AVOID EYE OR SKIN EXPOSURE TO DIRECT OR SCATTERED RADIATION OUTPUT POWER 3W MAX WAVELENGTH 400 to 680nm CLASS IV LASER PRODUCT Warning Laser Beam AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture A laser beam is emitted from this diode during operation. If the laser beam or its reflection enters your eye, it may cause injury to the eye or loss of eyesight. (Note that, depending on the wavelength of the beam, the laser beam might not be visible.) * Do not look directly into the laser beam. * Avoid exposure to the laser beam, any reflected or collimated beam. R08DS0064EJ0200 Rev.2.00 Jun 20, 2013 Page 7 of 7 Revision History NV4V41SF Data Sheet Rev. Date Page 0.01 1.00 Jul 11, 2012 Jan 09, 2013 - Throughout p.3 2.00 Jun 20, 2013 pp.4,5 p.2 p.3 Description Summary First edition issued This data sheet is officially released (Preliminary Data Sheet becomes Data Sheet). The typical values of Threshold Current and Operating Voltage are changed in ELECTRO-OPTICAL CHARACTERISTICS. The unit, "(1/e2)", is deleted from the value of PO. TYPICAL CHARACTERISTICS is added. Modification of PACKAGE DIMENSIONS Modification of ORDERING INFORMATION All trademarks and registered trademarks are the property of their respective owners. C-1 NOTICE 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. 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