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Jun 20, 2013
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Data Sheet
NV4V41SF
Blue-Violet Laser Diode
405 nm Blue-Violet Laser Light Source
DESCRIPTION
The NV4V41SF is a high output blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip
structure achieves a high optical power output of 600 mW (CW).
FEATURES
•High optical output power Po = 600 mW @CW
•Peak wavelengthλp = 400 to 405 nm
•Multi transverse mode (lateral)
•Operating temperature range TC = 0 to +30°C
•
φ
5.6 mm CAN package
APPLICATIONS
•Blue-violet laser light source
•Light source for Laser Direct Imaging system
•Light source for industrial manufacturing equipment
R08DS0064EJ0200
Rev.2.00
Jun 20, 2013
A Business Partner of Renesas Electronics Corporation.
NV4V41SF
R08DS0064EJ0200 Rev.2.00 Page 2 of 7
Jun 20, 2013
PACKAGE DIMENSIONS (UNIT: mm)
BOTTOM VIEW
1
2
3
0.4±0.1
0.5 MIN.
0.4±0.1
1.0±0.15
2.0±0.2
φ
CAP GLASS
LD CHIP
STEM
REFERENCE
PLAIN
P.C.D.
3 (Stem GND)
2
1
LD
90°±2°
Y
X
Z
1.6±0.2
6.5±0.5
1.3±0.08
1.2±0.1 2.3±0.3
3– 0.45±0.1
φ
3.55±0.1
φ
4.5 MAX.
φ
PIN CONNECTIONS
Remark Cap glass thickness :
0.25±0.03 mm
Cap glass refractive index :
1.53 (
= 405 nm)
λ
5.6±0.1
φ
<R>
A Business Partner of Renesas Electronics Corporation.
NV4V41SF
R08DS0064EJ0200 Rev.2.00 Page 3 of 7
Jun 20, 2013
ORDERING INFORMATION
Part Number Order Number Rank Packing Style
NV4V41SF-A HV Tray Packing (100 p/Tray), With data NV4V41SF
XV Individual Packing (for samples), With data
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Optical Output Power (CW) Po700 mW
Reverse Voltage of LD VR2 V
Operating Case Temperature TC 0 to +30 °C
Storage Temperature Tstg −40 to +85 °C
RECOMMENDED OPERATING CONDITIONS
(TC = 25°C, unless otherwise specified)
Parameter Symbol MAX. Unit
Optical Output Power (CW) Po600 mW
ELECTRO-OPTICAL CHARACTERISTICS
(TC = 25°C, unless otherwise specified)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Threshold Current Ith CW 140 180 mA
Operating Current Iop CW, Po = 600 mW 500 600 mA
Operating Voltage Vop CW, Po = 600 mW 4.1 4.6 V
Slope Efficiency
η
d CW, Po = 100 mW, 600 mW 1.0 1.7 W/A
Peak Wavelength λp CW, Po = 600 mW 400 – 405 nm
Beam Divergence (lateral)
θ
// 10 16 22 deg.
Beam Divergence (vertical)
θ
⊥ CW, Po = 600 mW (1/e2) 35 40 50
Position Accuracy Angle (vertical)
Δθ
⊥ CW, Po = 600 mW −5 – 5 deg.
<R>
A Business Partner of Renesas Electronics Corporation.
NV4V41SF
R08DS0064EJ0200 Rev.2.00 Page 4 of 7
Jun 20, 2013
TYPICAL CHARACTERISTICS
(TC = 25°C,
unless otherwise specified
)
3990 200 400 600 800
406
405
404
403
402
401
400
0.0038 nm/mW
3990 1020304050
406
405
404
403
402
401
400
0700100 200 300 400 500 600
0
700
500
600
300
400
100
200
10°C
20°C
30°C
40°C
0 700100 200 300 400 500 600
0
6
4
5
2
3
1
10°C
20°C
30°C
40°C
25°C
N= 5
0.079 nm/°C
600 mW
N= 5
−30 −20 −10 0 10 20 30
600 mW
400 mW
200 mW
−40 −30 −20 −10 0 10 20 4030
600 mW
400 mW
200 mW
Optical Output Power P
O
(mW)
Peak Wavelength λ
p
(nm)
OPTICAL OUTPUT POWER
vs. FORWARD CURRENT
Forward Current I
F
(mA)
Optical Output Power P
O
(mW)
FORWARD VOLTAGE vs.
FORWARD CURRENT
Forward Current I
F
(mA)
Forward Voltage V
F
(V)
POWER DEPENDENCE OF
PEAK WAVELENGTH
TEMPERATURE DEPENDENCE OF
PEAK WAVELENGTH
FFP (LATERAL)
Beam Divergence (degrees)
Relative Intensity
FFP (VERTICAL)
Beam Divergence (degrees)
Relative Intensity
Temperature (°C)
Peak Wavelength λ
p
(nm)
Remark The graphs indicate nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
NV4V41SF
R08DS0064EJ0200 Rev.2.00 Page 5 of 7
Jun 20, 2013
0.2
0.4
406401400 403 404 405
0
1.2
1.0
0.6
0.8
10°C
25°C
40°C
600 mW
Wavelength Spectrum
Wavelength λ (nm)
Relative Intensity
Remark The graphs indicate nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
NV4V41SF
R08DS0064EJ0200 Rev.2.00 Page 6 of 7
Jun 20, 2013
NOTES ON HANDLING (UNIT: mm)
1. Recommended soldering conditions
• Peak Temperature ≤350°C
•Time≤3 seconds
• Soldering of leads should be made at the point 2.0 mm from the root of the lead
• This device cannot be mounted using reflow soldering.
2. Usage cautions
(1) Take the following steps to ensure that the device is not damaged by static electricity.
• Wear an antistatic wrist strap when soldering the device.
We recommend a strap with a 1 MΩ resistor.
• Make sure that the work table and soldering iron are grounded.
• Make sure that the soldering iron does not leak.
(2) Do not subject the package to undue stress.
The package has a tensile strength of 1N or less.
Do not exceed this rating. Also, avoid bending the leads as much as possible.
If the leads must be bent, bend them only once, making sure to anchor the stem base of the lead.
(3) Do not allow the cap glass of the package to become scratched or dirty.
Also, do not subject the cap glass to external force.
(4) Be sure to attach a heat sink to sufficiently dissipate heat.
(5) Use the device as soon as possible after opening the bag.
A Business Partner of Renesas Electronics Corporation.
NV4V41SF
R08DS0064EJ0200 Rev.2.00 Page 7 of 7
Jun 20, 2013
SAFETY INFORMATION ON THIS PRODUCT
DANGER
VISIBLE LASER RADIATION
AVOID EYE OR SKIN EXPOSURE TO
DIRECT OR SCATTERED RADIATION
OUTPUT POWER 3W MAX
WAVELENGTH 400 to 680nm
CLASS IV LASER PRODUCT
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
SEMICONDUCTOR LASER
Warning Laser Beam A laser beam is emitted from this diode during operation.
If the laser beam or its reflection enters your eye, it may cause injury to the eye or loss of eyesight.
(Note that, depending on the wavelength of the beam, the laser beam might not be visible.)
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
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All trademarks and registered trademarks are the property of their respective owners.
C - 1
Revision History NV4V41SF Data Sheet
Description
Rev. Date Page Summary
0.01 Jul 11, 2012 − First edition issued
Throughout This data sheet is officially released (Preliminary Data Sheet becomes Data
Sheet).
The typical values of Threshold Current and Operating Voltage are changed
in ELECTRO-OPTICAL CHARACTERISTICS.
p.3
The unit, “(1/e2)”, is deleted from the value of PO.
1.00 Jan 09, 2013
pp.4,5 TYPICAL CHARACTERISTICS is added.
2.00 Jun 20, 2013 p.2 Modification of PACKAGE DIMENSIONS
p.3 Modification of ORDERING INFORMATION
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