2N3866(A)UB Compliant NPN Silicon High-Frequency Transistor Qualified per MIL-PRF-19500/398 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This 2N3866(A) silicon VHF-UHF amplifier transistor is military qualified up to the JANS level for high-reliability applications. It is also available in a top hat leaded TO-205AD package. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * JEDEC registered 2N3866 number * JAN, JANTX, JANTXV and JANS qualifications also available per MIL-PRF-19500/398 * RoHS compliant UB Package APPLICATIONS / BENEFITS * * * Ceramic UB package Lightweight Military and other high-reliability applications Also available in: TO-205AD (TO-39) package (leaded) 2N3866(A) MAXIMUM RATINGS @ T A = +25 C unless otherwise noted Parameters / Test Conditions Symbol Junction & Storage Temperature Thermal Resistance Junction-to-Case Thermal Resistance Junction-to-Ambient Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage (1) (1) Total Power Dissipation @ TA = +25 C Collector Current TJ , Tstg R JC R JA V CEO V CBO V EBO PT IC Value Unit -65 to +200 60 325 30 60 3.5 0.5 0.4 C C/W C/W V V V W A Notes: 1. Derated linearly 3.08 mW/C for T A > +25 C MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0175-1, Rev. 1 (8/30/13) (c)2013 Microsemi Corporation Page 1 of 4 2N3866(A)UB MECHANICAL and PACKAGING * * * * * * CASE: Ceramic. TERMINALS: Gold plating over nickel under plate. MARKING: Part number, date code, manufacturer's ID. TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities. WEIGHT: Less than 0.04 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3866 (A) UB Reliability Level JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level JANS = JANS level Blank = Commercial V CBO V CE V CEO V CC V EBO Forward Current Transfer Ratio selection option JEDEC type number SYMBOLS & DEFINITIONS Definition Symbol IB IC V BE V CB Surface Mount package Base current: The value of the dc current into the base terminal. Collector current: The value of the dc current into the collector terminal. Base-emitter voltage: The dc voltage between the base and the emitter. Collector-base voltage: The dc voltage between the collector and the base. Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is open-circuited. Collector-emitter voltage: The dc voltage between the collector and the emitter. Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base terminal is open-circuited. Collector-supply voltage: The supply voltage applied to a circuit connected to the collector. Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal open-circuited. T4-LDS-0175-1, Rev. 1 (8/30/13) (c)2013 Microsemi Corporation Page 2 of 4 2N3866(A)UB ELECTRICAL CHARACTERISTICS @ T A = +25 C, unless otherwise noted Characteristics OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage I C = 5 mA Collector-Base Breakdown Voltage I C = 100 A Emitter-Base Breakdown Voltage I E = 100 A Collector-Emitter Cutoff Current V CE = 28 V Collector-Emitter Cutoff Current V CE = 55 V ON CHARACTERISTICS (1) Forward-Current Transfer Ratio I C = 50 mA, V CE = 5.0 V Symbol Min V (BR)CEO 30 V V (BR)CBO 60 V V (BR)EBO 3.5 V 2N3866UB 2N3866AUB 2N3866UB 2N3866AUB I C = 360 mA, V CE = 5.0 V DYNAMIC CHARACTERISTICS Magnitude of Common Emitter SmallSignal Short-Circuit Forward Current 2N3866UB Transfer Ratio 2N3866AUB I C = 50 mA, V CE = 15 V, f = 200 MHz Output Capacitance V CB = 28 V, I E = 0, 100 kHz f 1.0 MHz Clamp Inductive Collector-Emitter Breakdown Voltage V BE = -1.5 V, I C = 40 mA 20 A I CES1 100 A 15 25 5 8 200 200 V CE(sat) 1.0 V I CES2 2.0 mA h FE3 7 12 |h FE | 2.5 4.0 C obo POWER OUTPUT CHARACTERISTICS Power Output V CC = 28 V; P in = 0.15 W; f = 400 MHz * V CC = 28 V; P in = 0.075 W; f = 400 MHz * * See Figure 4 on MIL-PRF-19500/398 Collector Efficiency V CC = 28 V; P in = 0.15 W; f = 400 MHz V CC = 28 V; P in = 0.075 W; f = 400 MHz Unit I CEO h FE Collector-Emitter Saturation Voltage I C = 100 mA, I B = 10 mA Collector-Emitter Cutoff Current - High Temp Operation V CE = 55 V, TA = +150 C Forward-Current Transfer Ratio - 2N3866UB Low Temperature Operation 2N3866AUB V CE = 5.0 V, I C = 50 mA, TA = -55 C Max 8.0 7.5 3.5 2.0 pF P 1out P 2out 1.0 0.5 n1 n2 45 40 % V (BR)CEX 55 Vdc W (1) Pulse Test: pulse width = 300 s, duty cycle 2.0% T4-LDS-0175-1, Rev. 1 (8/30/13) (c)2013 Microsemi Corporation Page 3 of 4 2N3866(A)UB PACKAGE DIMENSIONS Symbol BH BL BW CL CW LL1 LL2 Dimensions millimeters Max Min Max 0.056 1.17 1.42 0.128 2.92 3.25 0.108 2.16 2.74 0.128 3.25 0.108 2.74 0.038 0.56 0.96 0.035 0.43 0.89 inch Min 0.046 0.115 0.085 0.022 0.017 Note Symbol LS1 LS2 LW r r1 r2 Dimensions millimeters Max Min Max 0.040 0.89 1.02 0.079 1.80 2.01 0.024 0.41 0.61 0.008 0.20 0.012 0.31 0.022 0.56 inch Min 0.035 0.071 0.016 - Note NOTES: 1. Dimensions are in inches. Millimeters are given for information only. 2. Hatched areas on package denote metallized areas. 3. Lid material: Kovar. 4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. T4-LDS-0175-1, Rev. 1 (8/30/13) (c)2013 Microsemi Corporation Page 4 of 4