BC857BM - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 2003 Jul 15 2004 Mar 10

DISCRETE SEMICONDUCTORS

BC857M series

PNP general purpose transistors

M3D883

BOTTOM VIEW

2004 Mar 10 2

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC857M series

FEATURES

•Leadless ultra small plastic package

(1 mm ×0.6 mm ×0.5 mm)

•Board space 1.3 ×0.9 mm

•Power dissipation comparable to SOT23.

APPLICATIONS

•General purpose small signal DC

•Low and medium frequency AC applications

•Mobile communications, digital (still) cameras, PDAs,

PCMCIA cards.

DESCRIPTION

PNPgeneralpurposetransistorinaSOT883leadlessultra

small plastic package.

NPN complement: BC847M series.

MARKING

TYPE NUMBER MARKING CODE

BC857AM D1

BC857BM D2

BC857CM D3

PINNING

PIN DESCRIPTION

1 base

2 emitter

3 collector

handbook, halfpage

MAM469

Bottom view 2

Fig.1 Simplified outline (SOT883) and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage −45 V

ICcollector current (DC) −100 mA

ICM peak collector current −200 mA

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

BC857AM −Leadless ultra small plastic package; 3 solder lands; body

1.0 x 0.6 x 0.5 mm SOT883

BC857BM

BC857CM

2004 Mar 10 3

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC857M series

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

Notes

1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.

2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2.

THERMAL CHARACTERISTICS

Notes

1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.

2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −−50 V

VCEO collector-emitter voltage open base −−45 V

VEBO emitter-base voltage open collector −−5V

ICcollector current (DC) −−100 mA

ICM peak collector current −−200 mA

IBM peak base current −−100 mA

Ptot total power dissipation Tamb ≤25 °C

note 1 −250 mW

note 2 −430 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient in free air

note 1 500 K/W

note 2 290 K/W

2004 Mar 10 4

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC857M series

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

Note

1. Pulse test: tp≤300 µs; δ≤0.02.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector-base cut-off current VCB =−30 V; IE=0 −−15 nA

VCB =−30 V; IE= 0; Tj= 150 °C−−5µA

IEBO emitter-base cut-off current VEB =−5 V; IC=0 −−100 nA

hFE DC current gain VCE =−5 V; IC=−2mA

BC857AM 125 250

BC857BM 220 475

BC857CM 420 800

VBE base-emitter voltage IC=−2 mA; VCE =−5V −600 −750 mV

IC=−10 mA; VCE =−5V −−820 mV

VCEsat collector-emitter saturation voltage IC=−10 mA; IB=−0.5 mA −−200 mV

IC=−100 mA; IB=−5 mA; note 1 −−400 mV

Cccollector capacitance IE=i

e= 0; VCB =−10 V; f = 1 MHz −2.5 pF

fTtransition frequency VCE =−5 V; IC=−10 mA;

f = 100 MHz 100 −MHz

F noise ﬁgure IC=−200 µA; VCE =−5V;

RS=2kΩ; f = 1 kHz; B = 200 Hz −10 dB

2004 Mar 10 5

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC857M series

GRAPHICAL INFORMATION BC857AM

handbook, halfpage

500

100

200

300

400

MLE188

−10−2−10−1

(1)

−1IC (mA)

hFE

−10 −102−103

(2)

(3)

Fig.2 DC current gain; typical values.

VCE =−5V.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLE189

−10−2−10−1

(1)

−1IC (mA)

VBE

(mV)

−10 −102−103

(3)

(2)

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

VCE =−5V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

handbook, halfpage

−104

−103

−102

−10

MLE190

−10−1−1−10 IC (mA)

VCEsat

(mV)

−102−103

(1)

(2)

(3)

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 20.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLE191

−1−10−1IC (mA)

VBEsat

(mV)

−10 −102−103

(1)

(3)

(2)

Fig.5 Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 20.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

2004 Mar 10 6

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC857M series

GRAPHICAL INFORMATION BC857BM

handbook, halfpage

1000

200

400

600

800

MLE192

−10−2−10−1

(1)

−1IC (mA)

hFE

−10 −102−103

(2)

(3)

Fig.6 DC current gain; typical values.

VCE =−5V.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLE193

−10−2−10−1

(1)

−1IC (mA)

VBE

(mV)

−10 −102−103

(3)

(2)

Fig.7 Base-emitter voltage as a function of

collector current; typical values.

VCE =−5V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

handbook, halfpage

−104

−103

−102

−10

MLE194

−10−1−1−10 IC (mA)

VCEsat

(mV)

−102−103

(2)

(3)

(1)

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 20.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLE195

−1−10−1IC (mA)

VBEsat

(mV)

−10 −102−103

(1)

(3)

(2)

Fig.9 Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 20.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

2004 Mar 10 7

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC857M series

GRAPHICAL INFORMATION BC857CM

handbook, halfpage

1000

200

400

600

800

MLE196

−10−2−10−1

(1)

−1IC (mA)

hFE

−10 −102−103

(2)

(3)

Fig.10 DC current gain; typical values.

VCE =−5V.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLE197

−1−10−1IC (mA)

VBE

(mV)

−10 −102−103

(2)

(1)

(3)

Fig.11 Base-emitter voltage as a function of

collector current; typical values.

VCE =−5V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

handbook, halfpage

−104

−103

−102

−10

MLE198

−10−1−1−10 IC (mA)

VCEsat

(mV)

−102−103

(2)

(3)

(1)

Fig.12 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 20.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

−200

−1200

−400

−600

−800

−1000

MLE199

−1−10−1IC (mA)

VBEsat

(mV)

−10 −102−103

(1)

(3)

(2)

Fig.13 Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 20.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

2004 Mar 10 8

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC857M series

PACKAGE OUTLINE

UNIT A

max.

(1)

eLL

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.50

0.46 0.20

0.12 0.55

0.47

0.03 0.62

0.55 0.35 0.65

DIMENSIONS (mm are the original dimensions)

Note

1. Including plating thickness

0.30

0.22

0.30

0.22

SOT883 SC-101 03-02-05

03-04-03

1.02

0.95

0 0.5 1 mm

scale

Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT883

2004 Mar 10 9

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC857M series

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseor at anyotherconditions above thosegivenin the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuchapplicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorsellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

products, conveys no licence or title under any patent,

makes no representations or warranties that these

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right infringement, unless otherwise specified.

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

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Printed in The Netherlands R75/02/pp10 Date of release: 2004 Mar 10 Document order number: 9397 750 12839