1
Subject to change without notice.
www.cree.com/wireless
CMPA0060002D
2 Watt, 20 MHz - 6000 MHz GaN HEMT MMIC Power Amplier
Cree’s CMPA0060002D is a gallium nitride (GaN) High Electron
Mobility Transistor (HEMT) based monolithic microwave integrated
circuit (MMIC). GaN has superior properties compared to silicon
or gallium arsenide, including higher breakdown voltage,
higher saturated electron drift velocity and higher thermal
conductivity. GaN HEMTs also offer greater power density and
wider bandwidths compared to Si and GaAs transistors. This
MMIC employs a distributed (traveling-wave) amplier design
approach, enabling extremely wide bandwidths to be achieved
in a small footprint.
Rev 1.1 – April 2012
PN: CMPA0060002D
Typical Performance Over 0.5-6.0 GHz (TC = 25˚C)
Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units
Gain 18.7 17.4 17.6 17.4 17.6 dB
Saturated Output Power @ PIN 23 dBm 7.0 6.3 5.7 4.3 3.6 W
Power Gain @ PIN 23 dBm 15.4 15.0 14.5 13.3 12.5 dB
PAE @ PIN 23 dBm 43 40 36 28 31 %
Note: VDD = 28 V, ID = 100 mA
Features
• 17 dB Small Signal Gain
• 2 W Typical PSAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• Size 0.169 x 0.066 x 0.004 inches
Applications
• Ultra Broadband Ampliers
• Fiber Drivers
• Test Instrumentation
• EMC Amplier Drivers
2CMPA0060002D Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/wireless
Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specic product and/or vendor endorsement, sponsorship or association.
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter Symbol Rating Units
Drain-source Voltage VDSS 84 VDC
Gate-source Voltage VGS -10, +2 VDC
Storage Temperature TSTG -65, +150 ˚C
Operating Junction Temperature TJ225 ˚C
Maximum Forward Gate Current IGMAX 2 mA
Thermal Resistance, Junction to Case (packaged)1RθJC 4.0 ˚C/W
Note1 Eutectic die attach using 80/20 AuSn mounted to a 40 mil thick CuW carrier.
Electrical Characteristics (Frequency = 20 MHz to 6,000 MHz unless otherwise stated; TC = 25˚C)
Characteristics Symbol Min. Typ. Max. Units Conditions
DC Characteristics
Gate Threshold Voltage1V(GS)TH -3.8 -3.0 -2.7 V VDS = 20 V, ∆ID = 2 mA
Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDD = 26 V, IDQ = 100 mA
Saturated Drain Current2IDS – 1.94 – A VDS = 6.0 V, VGS = 2.0 V
RF Characteristics5
Small Signal Gain3S21 13.5 18 – dB VDD = 26 V, IDQ = 100 mA
Input Return Loss S11 – 9 – dB VDD = 26 V, IDQ = 100 mA
Output Return Loss S22 – 11 – dB VDD = 26 V, IDQ = 100 mA
Output Power4POUT 2 4 – W VDD = 26 V, IDQ = 100 mA,
PIN = 23 dBm
Power Added Efciency PAE – 30 – % VDD = 26 V, IDQ = 100 mA,
PIN = 23 dBm
Power Gain GP– 13.0 – dB VDD = 26 V, IDQ = 100 mA,
PIN = 23 dBm
Output Mismatch Stress VSWR – – 5 : 1 Y
No damage at all phase angles,
VDD = 26 V, IDQ = 100 mA,
PIN = 23 dBm
Notes:
1 The device will draw approximately 20-25 mA at pinch off due to the internal circuit structure.
2 Scaled from PCM data.
3 The lowest test frequency is 1.0 GHz due to the lack of a low frequency termination.
4 Test frequencies 1.0, 2.5, and 4.0 GHz.
5 All data pulsed with Pulse Width = 10 μsec, Duty Cycle = 0.1%.
3CMPA0060002D Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/wireless
Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specic product and/or vendor endorsement, sponsorship or association.
Die Dimensions (units in microns)
Overall die size 4280 x 1670 (+0/-50) microns, die thickness 100 (+/-10) micron.
All Gate and Drain pads must be wire bonded for electrical connection.
Pad Number Function Description Pad Size (microns)
1 RF IN1RF-Input pad. Matched to 50 ohm. Requires gate control from
an external bias –T from -2.3 V to -3.8 V. 200 x 150
2 Gate Termination Off Chip termination for the Gate. It needs to be DC-blocked . 200 x 150
3 Drain Termination Off Chip termination for the Drain. It needs to be DC-blocked. 200 x 150
4 RF OUT1RF-Output pad. Matched to 50 ohm. Requires Drain supply
from an external bias –T up to 26 V , 800 mA 200 x 150
Notes:
1 The RF In and Out pads have a ground-signal-ground conguration with a pitch of 1 mil (25 um)..
Die Assembly Notes:
• Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure
application note at www.cree.com/wireless.
• Vacuum collet is the preferred method of pick-up.
• The backside of the die is the Source (ground) contact.
• Die back side gold plating is 5 microns thick minimum.
• Thermosonic ball or wedge bonding are the preferred connection methods.
• Gold wire must be used for connections.
• Use the die label (XX-YY) for correct orientation.
4CMPA0060002D Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/wireless
Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specic product and/or vendor endorsement, sponsorship or association.
Functional Block Diagram
This device employs a wideband, traveling wave amplier topology. It has an internal termination for both
the Drain and the Gate, which works well over 2.5-6.0 GHz. For operation below 2.5 GHz an external termination is
required. This termination needs to be DC-blocked and suitable to withstand up to 3 W of RF power. (Refer to the
reference design section for the LF-termination in this data sheet for more details). The circuits also require external
wideband Bias –T’s to supply voltage to the Gate and Drain. The Bias-T at the Drain needs to be designed to handle 28
V and up to 800 mA.
Figure 1.
5CMPA0060002D Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/wireless
Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specic product and/or vendor endorsement, sponsorship or association.
External Termination Reference Design
The following is a plot of the gain of the die only.
Notes:
1 An off chip termination is needed to reduce the high gain peak at low frequencies.
2 The off chip termination should be designed to minimize the impact on the MMIC’s performance at higher
frequencies.
LRC Reference Circuit
The Drain and Gate circuit use the same L and C components but different values for the resistor.
Figure 2.
The Drain resistor needs to be dimensioned to handle 3 W of RF dissipation for the lowest frequencies while the Gate
resistor needs to handle 0.5 W. The suppliers of the SMT components are:
L1 = 47 nH, CoilCraft PN: 0402CS –47NXJB
C1 = 470 pf Murata PN: GRM1885C2A471A01D
Die only
10
12
14
16
18
20
22
24
26
28
30
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Frequency (GHz)
Gain (dB)
S21 (Die Only)
6CMPA0060002D Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/wireless
Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specic product and/or vendor endorsement, sponsorship or association.
Typical Performance
Power Gain vs Frequency Power Output vs Frequency
VDD = 28 V, PIN = 23 dBm VDD = 28 V, PIN = 23 dBm
\
Power Added Efciency vs Frequency Gain and Return Losses vs Frequency
VDD = 28V, PIN = 23 dBm VDD = 28 V, IDQ = 100 mA
12
14
16
18
20
Gain (dB)
Power Gain at 28 + 48V at Pin = 23 dBm
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
Gain (dB)
Frequency (GHz)
Power Gain, 28V
30
35
40
45
50
Power Added Efficiency (%)
PAE_28V_48V@ PIN 23 dBm
0
5
10
15
20
25
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
Power Added Efficiency (%)
Frequency (GHz)
PAE, 28V
36
38
40
42
44
46
48
50
Power Output at 28V + 48V at PIN = 23 dBm
20
22
24
26
28
30
32
34
36
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
Frequency (GHz)
Power Output, 28V
0
2
4
6
8
10
12
14
16
18
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
Frequency (GHz)
Gain (dB)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
Input/Output Return Losses (dB)
S21_28V S22_28V S11_28V
7CMPA0060002D Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.CREE
www.cree.com/wireless
Copyright © 2009-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specic product and/or vendor endorsement, sponsorship or association.
Disclaimer
Specications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents
or other rights of third parties which may result from its use. No license is granted by implication or otherwise under
any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities
and are provided for information purposes only. These values can and do vary in different applications, and actual
performance can vary over time. All operating parameters should be validated by customer’s technical experts for each
application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could
result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a
nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/wireless
Sarah Miller
Marketing & Export
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639