BAS16 SMALL SIGNAL
SWITCHING DIODES
Features
(TA= 25 unless otherwise noted)
Parameter S ymbol Value Unit
R everse Voltage VR75 V
Peak R everse Voltage VR M 100 V
Forward C urrent (continuous) IF250 mA
Non-R epetitive Peak Forward C urrent t = 1
μ
s 2.0
t = 1ms IF S M 1.0 A
t = 1s 0.5
Power Diss ipation at T amb = 25 P tot 350(1) mW
Thermal R esistance Junction to Ambient Air R thJ A 430 (1) /W
Junction Temperature Tj150
S torage Temperature R ange TS65 to +150
Note:
(1) Device on Fiberglass S ubstrate, see layout on second page
.016 (0.4)
.056 (1.43)
.037(0.95) .037(0.95)
max. .004 (0.1)
.122 (3.1)
.016 (0.4) .016 (0.4)
12
3
Top View
.102 (2.6)
.007 (0.175)
.045 (1.15)
.110 (2.8)
.052 (1.33)
.005 (0.125)
.094 (2.4)
.037 (0.95)
S ilicon E pitaxial P lanar Diode
·
Fas t switching diode in case S OT-23, es pecially
suited for automatic insertion.
S OT -23
Mechanical Data
C as e: S OT-23 P lastic Package
Weight: approx. 0.008g
MMMMarking C ode:
A6
Mounting P ad L ayout
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
Top V iew
Marking C ode:
·
Maximum R atings and Thermal C harac teris tic s
℃
℃
℃
℃
℃
-
RATINGS AND CHARACTERISTIC CURVES BAS16
C harac teris tic C ur ves (T A= 25¡C unles s otherwise noted)
RATINGS AND CHARACTERISTIC CURVES BAS16
