MMSZ4681-V to MMSZ4717-V
www.vishay.com Vishay Semiconductors
Rev. 1.8, 29-Nov-11 1Document Number: 85773
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Zener Diodes
FEATURES
Silicon planar Zener diodes
Standard Zener voltage tolerance is ± 5 %
High temperature soldering guaranteed:
260 °C/4 x 10 s set terminals
These diodes are also available in DO-35 case
with the type designation 1N4681 to 1N4717,
and SOT-23 case with type designation MMBZ4681-V to
MMBZ4717-V
AEC-Q101 qualified
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
PARAMETER VALUE UNIT
VZ range nom. 2.4 to 43 V
Test current IZT 0.05 mA
VZ specification Thermal equilibrium
Int. construction Single
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
MMSZ4681-V to MMSZ4717-V MMSZ4681-V to
MMSZ4717-V-series-GS18 10 000 (8 mm tape on 13" reel) 10 000/box
MMSZ4681-V to MMSZ4717-V MMSZ4681-V to
MMSZ4717-V-series-GS08 3000 (8 mm tape on 7" reel) 15 000/box
PACKAGE
PACKAGE NAME WEIGHT MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL
SOLDERING
CONDITIONS
SOD-123 10.3 mg UL 94 V-0 MSL level 1
(according J-STD-020) 260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation TL = 75 °C, on FR - 4 or FR - 5 board with
minimum recommended solder pad layou Ptot 500 mW
Zener current See table “Characteristics”
Junction to ambient air On FR - 4 or FR - 5 board with minimum
recommended solder pad layou RthJA 340 K/W
Junction temperature Tj150 °C
Storage temperature range Tstg - 55 to + 150 °C
MMSZ4681-V to MMSZ4717-V
www.vishay.com Vishay Semiconductors
Rev. 1.8, 29-Nov-11 2Document Number: 85773
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
•Maximum V
F = 0.9 V at IF = 10 mA
(1) Measured with device junction in thermal equilibrium
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER MARKING
CODE
ZENER VOLTAGE RANGE (1) TEST
CURRENT REVERSE CURRENT
VZ at IZT1 IZT1 IR at VR
VmA μA V
MIN. NOM. MAX. MAX.
MMSZ4681-V CF 2.28 2.4 2.52 0.05 2 1
MMSZ4682-V CH 2.57 2.7 2.84 0.05 1 1
MMSZ4683-V CJ 2.85 3 3.15 0.05 0.8 1
MMSZ4684-V CK 3.14 3.3 3.47 0.05 7.5 1.5
MMSZ4685-V CM 3.42 3.6 3.78 0.05 7.5 2
MMSZ4686-V CN 3.71 3.9 4.1 0.05 5 2
MMSZ4687-V CP 4.09 4.3 4.52 0.05 4 2
MMSZ4688-V CT 4.47 4.7 4.94 0.05 10 3
MMSZ4689-V CU 4.85 5.1 5.36 0.05 10 3
MMSZ4690-V CV 5.32 5.6 5.88 0.05 10 4
MMSZ4691-V CA 5.89 6.2 6.51 0.05 10 5
MMSZ4692-V CX 6.46 6.8 7.14 0.05 10 5.1
MMSZ4693-V CY 7.13 7.5 7.88 0.05 10 5.7
MMSZ4694-V CZ 7.79 8.2 8.61 0.05 1 6.2
MMSZ4695-V DC 8.27 8.7 9.14 0.05 1 6.6
MMSZ4696-V DD 8.65 9.1 9.56 0.05 1 6.9
MMSZ4697-V DE 9.5 10 10.5 0.05 1 7.6
MMSZ4698-V DF 10.5 11 11.6 0.05 0.05 8.4
MMSZ4699-V DH 11.4 12 12.6 0.05 0.05 9.1
MMSZ4700-V DJ 12.4 13 13.7 0.05 0.05 9.8
MMSZ4701-V DK 13.3 14 14.7 0.05 0.05 10.6
MMSZ4702-V DM 14.3 15 15.8 0.05 0.05 11.4
MMSZ4703-V DN 15.2 16 16.8 0.05 0.05 12.1
MMSZ4704-V DP 16.2 17 17.9 0.05 0.05 12.9
MMSZ4705-V DT 17.1 18 18.9 0.05 0.05 13.6
MMSZ4706-V DU 18.1 19 20 0.05 0.05 14.4
MMSZ4707-V DV 19 20 21 0.05 0.01 15.2
MMSZ4708-V DA 20.9 22 23.1 0.05 0.01 16.7
MMSZ4709-V DZ 22.8 24 25.2 0.05 0.01 18.2
MMSZ4710-V DY 23.8 25 26.3 0.05 0.01 19
MMSZ4711-V EA 25.7 27 28.4 0.05 0.01 20.4
MMSZ4712-V EC 26.6 28 29.4 0.05 0.01 21.2
MMSZ4713-V ED 28.5 30 31.5 0.05 0.01 22.8
MMSZ4714-V EE 31.4 33 34.7 0.05 0.01 25
MMSZ4715-V EF 34.2 36 37.8 0.05 0.01 27.3
MMSZ4716-V EH 37.1 39 41 0.05 0.01 29.6
MMSZ4717-V EJ 40.9 43 45.2 0.05 0.01 32.6
MMSZ4681-V to MMSZ4717-V
www.vishay.com Vishay Semiconductors
Rev. 1.8, 29-Nov-11 3Document Number: 85773
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
Fig. 2 - Typical Change of Working Voltage under Operating
Conditions at Tamb = 25 °C
Fig. 3 - Typical Change of Working Voltage vs.
Junction Temperature
Fig. 4 - Temperature Coefficient of VZ vs. Z-Voltage
Fig. 5 - Forward Current vs. Forward Voltage
Fig. 6 - Z-Current vs. Z-Voltage
0
100
200
300
400
500
600
0 20 40 60 80 100 120 140 160
T
amb
- Ambient Temperature (°C)
P
tot
- Total Power Dissipation (mW)
20850
10 15 20
1
10
100
1000
V
Z
- Voltage Change (mV)
V
Z
- Z-Voltage (V)
25
95 9598
Tj = 25 °C
IZ = 5 mA
05
- 60 60 120 180
0.8
0.9
1.0
1.1
1.2
1.3
V
Ztn
- Relative Voltage Change
Tj - Junction Temperature (°C)
240
95 9599
0
VZtn = VZt/VZ (25 °C)
0
TK
VZ
= 10 x 10-4/K
8 x 10-4/K
2 x 10-4/K
6 x 10-4/K
4 x 10-4/K
- 4 x 10-4/K
- 2 x 10-4/K
- 5
0
5
10
15
VZ - Z-Voltage (V)
95 9600
IZ = 5 mA
0 10 203040 50
TKVZ - Temperature Coefficient
of VZ (10-4/K)
0 0.2 0.4 0.6 0.8
0.001
0.01
0.1
1
10
100
1.0
95 9605
IF - Forward Current (mA)
VF - Forward Voltage (V)
Tj = 25 °C
820
95 9604
0
20
40
60
80
100
IZ - Z-Current (mA)
Ptot = 500 mW
Tamb = 25 °C
046 12
VZ - Z-Voltage (V)
MMSZ4681-V to MMSZ4717-V
www.vishay.com Vishay Semiconductors
Rev. 1.8, 29-Nov-11 4Document Number: 85773
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Z-Current vs. Z-Voltage Fig. 8 - Differential Z-Resistance vs. Z-Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
15 20 25 30
0
10
20
30
40
50
IZ - Z-Current (mA)
VZ - Z-Voltage (V)
35
95 9607
Ptot = 500 mW
Tamb = 25 °C
0 101520
1
10
100
1000
25
95 9606
Tj = 25 °C
IZ = 1 mA
5 mA
10 mA
V
Z
- Z-Voltage (V)
r
Z
- Differential Z-Resistance (Ω)
5
0.1 (0.004) max.
2.85 (0.112)
2.55 (0.100)
3.85 (0.152)
3.55 (0.140)
1.7 (0.067)
1.40 (0.055)
Mounting Pad Layout
2.5 (0.098)
0.85 (0.033) 0.85 (0.033)
0.85 (0.033)
Cathode bar
0.65 (0.026)
0.45 (0.018)
0.10 (0.004)
1 (0.039)
0.15 (0.006)
1.35 (0.053)
0.2 (0.008)
0° to 8°
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
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Revision: 12-Mar-12 1Document Number: 91000
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