MPSA18
NPN SILICON TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPSA18 is a small
signal, low noise NPN silicon transistor designed for
general purpose amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 45 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 6.5 V
Continuous Collector Current IC 200 mA
Power Dissipation PD 625 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 200 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=30V 50 nA
BVCBO I
C=100µA 45 V
BVCEO I
C=10mA 45 V
BVEBO I
E=10µA 6.5 V
VCE(SAT) I
C=10mA, IB=0.5mA 0.2 V
VCE(SAT) I
C=50mA, IB=5.0mA 0.3 V
VBE(ON) V
CE=5.0V, IC=1.0mA 0.7 V
hFE V
CE=5.0V, IC=10A 400
hFE V
CE=5.0V, IC=100A 500
hFE V
CE=5.0V, IC=1.0mA 500
hFE V
CE=5.0V, IC=10mA 500 1500
fT V
CE=5.0V, IC=1.0mA, f=100MHz 100 MHz
Cob V
CB=5.0V, IE=0, f=1.0MHz 3.0 pF
Cib V
EB=0.5V, IC=0, f=1.0MHz 6.5 pF
NF VCE=5.0V, IC=100A, RS=10k,
f=1.0kHz 1.5 dB
R0 (3-February 2012)
www.centralsemi.com
MPSA18
NPN SILICON TRANSISTOR
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
TO-92 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R0 (3-February 2012)
