BC 846W ... BC 850W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage NPN 20.1 10.1 Type Code 1 1.250.1 3 2.10.1 0.3 NPN Power dissipation - Verlustleistung 200 mW Plastic case Kunststoffgehause SOT-323 Weight approx. - Gewicht ca. 2 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert 1.3 Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Dimensions / Mae in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BC 846W BC 847W BC 850W BC 848W BC 849W Collector-Emitter-voltage B open VCE0 65 V 45 V 30 V Collector-Base-voltage E open VCB0 80 V 50 V 30 V Emitter-Base-voltage C open VEB0 6V 5V 1 Power dissipation - Verlustleistung Ptot 200 mW ) Collector current - Kollektorstrom (DC) IC 100 mA Peak Collector current - Kollektor-Spitzenstrom ICM 200 mA Peak Base current - Basis-Spitzenstrom IBM 200 mA Peak Emitter current - Emitter-Spitzenstrom - IEM 200 mA Junction temperature - Sperrschichttemperatur Tj 150/C Storage temperature - Lagerungstemperatur TS - 65...+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Group A Group B Group C 2 DC current gain - Kollektor-Basis-Stromverhaltnis ) VCE = 5 V, IC = 10 :A hFE typ. 90 typ. 150 typ. 270 VCE = 5 V, IC = 2 mA hFE 110...220 200...450 420...800 Small signal current gain - Stromverstarkung hfe typ. 220 typ. 330 typ. 600 h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz 1 Input impedance - Eingangs-Impedanz hie 1.6...4.5 kS 3.2...8.5 kS 6...15 kS Output admittance - Ausgangs-Leitwert hoe 18 < 30 :S 30 < 60 :S 60 < 110 :S Reverse voltage transfer ratio Spannungsruckwirkung hre typ.1.5 *10-4 typ. 2 *10-4 typ. 3 *10-4 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 12 01.11.2003 General Purpose Transistors BC 846W ... BC 850W Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector saturation volt. - Kollektor-Sattigungsspannung 1) IC = 10 mA, IB = 0.5 mA VCEsat - 90 mV 250 mV IC = 100 mA, IB = 5 mA VCEsat - 200 mV 600 mV VBEsat - 700 mV - VBEsat - 900 mV - VCE = 5 V, IC = 2 mA VBEon 580 mV 660 mV 700 mV VCE = 5 V, IC = 10 mA VBEon - - 770 mV IE = 0, VCB = 30 V ICB0 - - 15 nA IE = 0, VCB = 30 V, Tj = 150/C ICB0 - - 5 :A IEB0 - - 100 nA 1 Base saturation voltage - Basis-Sattigungsspannung ) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA 1 Base-Emitter voltage - Basis-Emitter-Spannung ) Collector-Base cutoff current - Kollektorreststrom Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 5 V Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz fT 100 MHz - Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 - 3.5 pF 6 pF - 9 pF - - 2 dB 10 dB 1.2 dB 4 dB Emitter-Base Capacitance - Emitter-Basis-Kapazitat VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEB0 Noise figure - Rauschzahl VCE = 5 V, IC = 200 :A RG = 2 kS, f = 1 kHz, )f = 200 Hz VCE = 5 V, IC = 200 :A RG = 2 kS, f = 1 kHz, f = 30 ... 15000 Hz BC 846W... F BC 848W BC 849W... F BC 850W BC 849W F - 1.4 dB 4 dB BC 850W F - 1.4 dB 4 dB Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking of available current gain groups per type Stempelung der lieferbaren Stromverstarkungsgruppen pro Typ 620 K/W 2) RthA BC 856W ... BC 860W BC 846AW = 1A BC 846BW = 1B BC 847AW = 1E BC 847BW = 1F BC 847CW = 1G BC 848AW = 1J BC 848BW = 1K BC 848CW = 1L BC 849BW = 2B BC 849CW = 2C BC 850BW = 2F BC 850CW = 2G ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 13