4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features General Description High voltage: The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. - MOC8204M, BVCER = 400V - H11D1M, H11D2M, BVCER = 300V - H11D3M, BVCER = 200V High isolation voltage: - 7500 VAC peak, 1 second Underwriters Laboratory (UL) recognized File # E90700, Volume 2 IEC 60747-5-2 approved (ordering option V) Applications Power supply regulators Digital logic inputs Microprocessor inputs Appliance sensor systems Industrial controls Schematic ANODE 1 CATHODE 2 N/C 3 Package Outlines 6 BASE 5 COLLECTOR 4 EMITTER (c)2007 Fairchild Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 www.fairchildsemi.com 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M -- High Voltage Phototransistor Optocouplers September 2009 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Device Value Units TOTAL DEVICE TSTG Storage Temperature All -40 to +150 C TOPR Operating Temperature All -40 to +100 C TSOL Lead Solder Temperature (Wave Solder) All 260 for 10 sec C Total Device Power Dissipation @ TA = 25C All 260 mW 3.5 mW/C PD Derate Above 25C EMITTER IF Forward DC Current(1) All 80 mA VR Reverse Input Voltage(1) All 6.0 V Forward Current - Peak (1s pulse, 300pps)(1) All 3.0 A LED Power Dissipation @ TA = 25C(1) All IF(pk) PD Derate Above 25C 150 mW 1.41 mW/C DETECTOR PD Power Dissipation @ TA = 25C All 300 mW 4.0 mW/C MOC8204M 400 V H11D1M, H11D2M 300 H11D3M 200 4N38M 80 MOC8204M 400 H11D1M, H11D2M 300 H11D3M 200 4N38M 80 H11D1M, H11D2M, H11D3M, MOC8204M 7 V All 100 mA Derate linearly above 25C VCER VCBO VECO IC Collector to Emitter Voltage(1) Collector Base Voltage(1) Emitter to Collector Voltage(1) Collector Current (Continuous) V Note: 1. Parameters meet or exceed JEDEC registered data (for 4N38M only). (c)2007 Fairchild Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 www.fairchildsemi.com 2 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M -- High Voltage Phototransistor Optocouplers Absolute Maximum Ratings Individual Component Characteristics Symbol Characteristic Test Conditions Device Min. Typ.* Max. Unit All 1.15 1.5 All -1.8 mV/C 25 V 50 pF 65 pF EMITTER VF Forward Voltage(2) VF TA Forward Voltage Temp. Coefficient BVR Reverse Breakdown Voltage IR = 10A All CJ Junction Capacitance VF = 0V, f = 1MHz All IF = 10mA 6 VF = 1V, f = 1MHz IR Reverse Leakage Current(2) VR = 6V All 0.05 10 V A DETECTOR BVCER Breakdown Voltage Collector to Emitter(2) BVCEO BVCBO RBE = 1M, IC = 1.0mA, IF = 0 MOC8204M 400 H11D1M/2M 300 H11D3M 200 No RBE, IC = 1.0mA Collector to Base(2) IC = 100A, IF = 0 4N38M 80 MOC8204M 400 H11D1M/2M 300 H11D3M 200 4N38M 80 BVEBO Emitter to Base IE = 100A, IF = 0 4N38M 7 BVECO Emitter to Collector IE = 100A, IF = 0 All 7 Leakage Current Collector to Emitter(2) (RBE = 1M) VCE = 300V, IF = 0, TA = 25C ICER V V V 10 MOC8204M VCE = 300V, IF = 0, TA = 100C VCE = 200V, IF = 0, TA = 25C H11D1M/2M VCE = 200V, IF = 0, TA = 100C VCE = 100V, IF = 0, TA = 25C H11D3M VCE = 100V, IF = 0, TA = 100C ICEO V 100 nA 250 A 100 nA 250 A 100 nA 250 A 50 nA 4N38M No RBE, VCE = 60V, IF = 0, TA = 25C Transfer Characteristics (TA = 25C Unless otherwise specified.) Symbol Characteristics Test Conditions Device Min. H11D1M/2M/3M, MOC8204M 2 (20) 2 (20) Typ.* Max. Units EMITTER CTR VCE(SAT) Current Transfer Ratio, Collector to Emitter IF = 10mA, VCE = 10V, RBE = 1M IF = 10mA, VCE = 10V 4N38M Saturation Voltage(2) IF = 10mA, IC = 0.5mA, RBE = 1M H11D1M/2M/3M, MOC8204M IF = 20mA, IC = 4mA mA (%) 0.1 4N38M 0.40 V 1.0 SWITCHING TIMES tON Non-Saturated Turn-on Time tOFF Turn-off Time VCE = 10V, ICE = 2mA, RL = 100 All 5 s All 5 s *All Typical values at TA = 25C Note: 2. Parameters meet or exceed JEDEC registered data (for 4N38M only). (c)2007 Fairchild Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 www.fairchildsemi.com 3 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M -- High Voltage Phototransistor Optocouplers Electrical Characteristics (TA = 25C unless otherwise specified.) Isolation Characteristics Symbol VISO Characteristic Isolation Voltage Test Conditions Device Min. All 7500 11 f = 60Hz, t = 1 sec. RISO Isolation Resistance VI-O = 500 VDC All CISO Isolation Capacitance f = 1MHz All 10 Typ.* Max. Units VACPEAK 0.2 pF *All Typical values at TA = 25C Safety and Insulation Ratings As per IEC 60747-5-2, this optocoupler is suitable for "safe electrical insulation" only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 0110/1.89 Table 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 CTI Comparative Tracking Index 175 VPR Input to Output Test Voltage, Method b, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 sec, Partial Discharge < 5pC 1594 Vpeak Input to Output Test Voltage, Method a, VIORM x 1.5 = VPR, Type and Sample Test with tm = 60 sec, Partial Discharge < 5pC 1275 Vpeak VIORM Max. Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over Voltage 6000 Vpeak External Creepage 7 mm External Clearance 7 mm Insulation Thickness 0.5 mm Insulation Resistance at Ts, VIO = 500V 109 RIO (c)2007 Fairchild Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 www.fairchildsemi.com 4 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M -- High Voltage Phototransistor Optocouplers DC Electrical Characteristics (Continued) (TA = 25C unless otherwise specified.) Fig. 1 LED Forward Voltage vs. Forward Current Fig. 2 Normalized Output Characteristics NORMALIZED ICER - OUTPUT CURRENT VF - FORWARD VOLTAGE (V) 1.8 1.7 1.6 1.5 1.4 TA = -55C 1.3 TA = 25C 1.2 1.1 TA = 100C 1.0 1 10 Normalized to: VCE = 10V IF = 10mA RBE = 106 TA = 25C 10 IF = 50mA IF = 10mA 1 IF = 5mA 0.1 0.01 0.1 100 1 IF - LED FORWARDCURRENT (mA) Normalized to: VCE = 10 V IF = 10 mA RBE = 106 TA = 25C 1 0.1 0.01 IF = 10mA 1 IF = 5mA 0.1 -60 10 -40 -20 VCE = 300V VCE = 100V 10 VCE = 50V 1 0.1 10 20 30 40 50 60 70 80 90 100 110 20 40 60 80 100 Fig. 6 Normalized Collector-Base Current vs. Temperature 10 Normalized to: VCE = 10V IF = 10mA RBE = 106 TA = 25C 9 8 IF = 50mA 7 6 5 4 3 2 IF = 10mA 1 0 -60 IF = 5mA -40 -20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (C) TA - AMBIENT TEMPERATURE (C) (c)2007 Fairchild Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 NORMALIZED ICBO - COLLECTOR-BASE CURRENT NORMALIZED ICER - DARK CURRENT Normalized to: VCE = 100V RBE = 106 TA = 25C 100 0 TA - AMBIENT TEMPERATURE (C) Fig. 5 Normalized Dark Current vs. Ambient Temperature 1000 Normalized to: VCE = 10V IF = 10mA RBE = 106 TA = 25C IF = 20mA IF - LED INPUT CURRENT (mA) 10000 100 Fig. 4 Normalized Output Current vs. Temperature NORMALIZED ICER - OUTPUT CURRENT NORMALIZED ICER - OUTPUT CURRENT Fig. 3 Normalized Output Current vs. LED Input Current 10 1 10 VCE - COLLECTOR VOLTAGE (V) www.fairchildsemi.com 5 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M -- High Voltage Phototransistor Optocouplers Typical Performance Curves Through Hole 0.4" Lead Spacing 8.13-8.89 6 4 8.13-8.89 6 4 1 3 6.10-6.60 6.10-6.60 Pin 1 1 3 Pin 1 5.08 (Max.) 0.25-0.36 7.62 (Typ.) 3.28-3.53 5.08 (Max.) 0.25-0.36 3.28-3.53 0.38 (Min.) 2.54-3.81 0.38 (Min.) 2.54-3.81 0.20-0.30 2.54 (Bsc) (0.86) 15 (Typ.) 2.54 (Bsc) (0.86) 0.41-0.51 1.02-1.78 0.20-0.30 0.41-0.51 0.76-1.14 10.16-10.80 1.02-1.78 0.76-1.14 Surface Mount (1.78) 8.13-8.89 6 4 (1.52) (2.54) (7.49) 6.10-6.60 8.43-9.90 (10.54) 1 3 (0.76) Pin 1 Rcommended Pad Layout 0.25-0.36 3.28-3.53 5.08 (Max.) 0.38 (Min.) 0.20-0.30 2.54 (Bsc) (0.86) 0.16-0.88 (8.13) 0.41-0.51 1.02-1.78 0.76-1.14 Note: All dimensions in mm. (c)2007 Fairchild Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 www.fairchildsemi.com 6 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M -- High Voltage Phototransistor Optocouplers Package Dimensions Option Order Entry Identifier (Example) Description No option H11D1M Standard Through Hole Device (50 units per tube) S H11D1SM SR2 H11D1SR2M T H11D1TM 0.4" Lead Spacing V H11D1VM VDE 0884 TV H11D1TVM VDE 0884, 0.4" Lead Spacing SV H11D1SVM VDE 0884, Surface Mount SR2V H11D1SR2VM Surface Mount Lead Bend Surface Mount; Tape and Reel VDE 0884, Surface Mount, Tape and Reel Marking Information 1 V 3 H11D1 2 X YY Q 6 4 5 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) 4 One digit year code, e.g., `7' 5 Two digit work week ranging from `01' to `53' 6 Assembly package code (c)2007 Fairchild Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 www.fairchildsemi.com 7 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M -- High Voltage Phototransistor Optocouplers Ordering Information 12.0 0.1 4.5 0.20 2.0 0.05 O1.5 MIN 4.0 0.1 0.30 0.05 1.75 0.10 11.5 1.0 21.0 0.1 9.1 0.20 O1.5 0.1/-0 10.1 0.20 0.1 MAX 24.0 0.3 User Direction of Feed Reflow Profile 300 260C 280 260 >245C = 42 Sec 240 220 200 180 C Time above 183C = 90 Sec 160 140 120 1.822C/Sec Ramp up rate 100 80 60 40 33 Sec 20 0 0 60 120 180 270 360 Time (s) (c)2007 Fairchild Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 www.fairchildsemi.com 8 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M -- High Voltage Phototransistor Optocouplers Carrier Tape Specification Auto-SPMTM Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM* TM* (R) (R) Fairchild Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FETBenchTM FlashWriter(R)* FPSTM F-PFSTM FRFET(R) SM Global Power Resource Green FPSTM Green FPSTM e-SeriesTM GmaxTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) (R) OPTOPLANAR (R) PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW/W/kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM Sync-LockTM (R) * The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM TriFault DetectTM TRUECURRENTTM* SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 (c)2007 Fairchild Semiconductor Corporation 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6 www.fairchildsemi.com 9 4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M -- High Voltage Phototransistor Optocouplers TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.