NTE390 (NPN) & NTE391 (PNP) Silicon Complementary Transistors General Purpose TO-3PN Type Package Description: The NTE390 (NPN) and NTE391 (PNP) are silicon complementary transistors in a TO-3PN type package designed for general purpose power amplifier and switching applications. Features: D 10A Collector Current D Low Leakage Current: ICEO = 0.7mA @ VCE = 60V D Excellent DC Gain: hFE = 40 Typ @ 3A D High Current Gain Bandwidth Product: hfe = 3 Min @ IC = 500mA, f = 1MHz Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.64W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.56C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35.7C/W Note 1. Pulse Test: Pulse Width = 10ms, Duty Cycle 10%. Rev. 2-15 Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 100 - - V OFF Characteristics Collector-Emitter Sustaining Voltage VCEO(sus) IC = 30mA, IB = 0, Note 2 Collector-Emitter Cutoff Current Emitter-Base Cutoff Current ICEO VCE = 60V, IB = 0 - - 0.7 mA ICES VCE = 100V, VEB = 0 - - 0.4 mA IEBO VEB = 5V, IC = 0 - - 1 mA hFE IC = 1A, VCE = 4V 40 - - IC = 3A, VCE = 4V 20 - 100 IC = 3A, IB = 0.3A - - 1 V IC = 10A, IB = 2.5A - - 4 V IC = 3A, VCE = 4V - - 1.6 V IC = 10A, VCE = 4V - - 3.0 V ON Characteristics (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage VCE(sat) VBE(on) Dynamic Characteristics Small-Signal Current Gain hfe IC = 0.5A, VCE = 10V, f = 1kHz 20 - - Current-Gain Bandwidth Product fT IC = 0.5A, VCE = 10V, f = 1MHz, Note 3 3 - - Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle 2%. Note 3. fT = |hfe| ftest .189 (4.8) .787 (20.0) .614 (15.6) .590 (15.0) .138 (3.5) Dia .889 (22.6) B .215 (5.45) C E MHz