NTE390 (NPN) & NTE391 (PNP)
Silicon Complementary Transistors
General Purpose
TO−3PN Type Package
Description:
The NTE390 (NPN) and NTE391 (PNP) are silicon complementary transistors in a TO−3PN type package
designed for general purpose power amplifier and switching applications.
Features:
D10A Collector Current
DLow Leakage Current: ICEO = 0.7mA @ VCE = 60V
DExcellent DC Gain: hFE = 40 Typ @ 3A
DHigh Current Gain Bandwidth Product: hfe = 3 Min @ IC = 500mA, f = 1MHz
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO 100V.....................................................
Collector−Base Voltage, VCB 100V........................................................
Emitter−Base Voltage, VEB 5V...........................................................
Collector Current, IC
Continuous 10A..................................................................
Peak (Note 1) 15A................................................................
Continuous Base Current, IB3A..........................................................
Total Power Dissipation (TC = +25C), PD80W............................................
Derate Above 25C 0.64W/C......................................................
Operating Junction Temperature Range, TJ−65 to +150C..................................
Storage Temperature Range, Tstg −65 to +150C..........................................
Thermal Resistance, Junction−to−Case, RthJC 1.56C/W....................................
Thermal Resistance, Junction−to−Ambient, RthJA 35.7C/W..................................
Note 1. Pulse Test: Pulse Width = 10ms, Duty Cycle 10%.
Rev. 2−15
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Sustaining Voltage VCEO(sus) IC = 30mA, IB = 0, Note 2 100 − − V
Collector−Emitter Cutoff Current ICEO VCE = 60V, IB = 0 − − 0.7 mA
ICES VCE = 100V, VEB = 0 − − 0.4 mA
Emitter−Base Cutoff Current IEBO VEB = 5V, IC = 0 − − 1 mA
ON Characteristics (Note 2)
DC Current Gain hFE IC = 1A, VCE = 4V 40 − −
IC = 3A, VCE = 4V 20 −100
Collector−Emitter Saturation Voltage VCE(sat) IC = 3A, IB = 0.3A − − 1 V
IC = 10A, IB = 2.5A − − 4 V
Base−Emitter ON Voltage VBE(on) IC = 3A, VCE = 4V − − 1.6 V
IC = 10A, VCE = 4V − − 3.0 V
Dynamic Characteristics
Small−Signal Current Gain hfe IC = 0.5A, VCE = 10V, f = 1kHz 20 − −
Current−Gain Bandwidth Product fTIC = 0.5A, VCE = 10V,
f = 1MHz, Note 3
3− − MHz
Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle 2%.
Note 3. fT = |hfe| ftest
.787
(20.0)
.614 (15.6)
.189 (4.8)
.138
(3.5)
Dia
.215 (5.45)
BCE
.590
(15.0)
.889
(22.6)
