2SK4194LS Ordering number : ENA1372 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4194LS General-Purpose Switching Device Applications Features * * * * Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol Conditions Ratings VDSS VGSS IDc*1 Unit 450 Limited only by maximum temperature Tch=150C V 30 V 6 A A IDpack*2 Tc=25C (SANYO's ideal heat dissipation condition*3) 5.4 IDP PW10s, duty cycle1% 22 A 2.0 W Allowable Power Dissipation PD 30 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *4 EAS IAV 114 mJ Avalanche Current *5 Tc=25C (SANYO's ideal heat dissipation condition*3) 6 A Note : *1 Shows chip capability *2 Package limited *3 SANYO's condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V, L=5mH, IAV=6A *5 L5mH, single pulse Marking : K4194 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network D2408QB MS IM TC-00001717 No. A1372-1/5 2SK4194LS Electrical Characteristics at Ta=25C Parameter Symbol Conditions Ratings min typ Unit max 450 ID=10mA, VGS=0V VDS=360V, VGS=0V V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=30V, VDS=0V VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=3.0A Static Drain-to-Source On-State Resistance RDS(on) ID=3.0A, VGS=10V 1.0 Input Capacitance Ciss VDS=30V, f=1MHz 360 pF Output Capacitance Coss VDS=30V, f=1MHz 84 pF Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 19 pF Turn-ON Delay Time td(on) See specified Test Circuit. 13 ns Rise Time tr See specified Test Circuit. 34 ns Turn-OFF Delay Time See specified Test Circuit. 39 ns Fall Time td(off) tf See specified Test Circuit. 17 ns Total Gate Charge Qg VDS=200V, VGS=10V, ID=6A 14.6 nC 100 A 100 nA 3 1.4 5 2.8 V S 1.3 Gate-to-Source Charge Qgs nC Qgd VDS=200V, VGS=10V, ID=6A VDS=200V, VGS=10V, ID=6A 3.3 Gate-to-Drain "Miller" Charge 8.8 nC Diode Forward Voltage VSD IS=6A, VGS=0V 0.9 1.2 V Package Dimensions unit : mm (typ) 7509-002 4.5 10.0 2.8 0.6 16.1 16.0 7.2 3.5 3.2 1.2 14.0 3.6 0.9 1.2 0.75 0.7 1 : Gate 2 : Drain 3 : Source 2.4 1 2 3 2.55 SANYO : TO-220FI(LS) 2.55 Switching Time Test Circuit Avalanche Resistance Test Circuit VDD=200V PW=10s D.C.0.5% L 50 RG ID=3A RL=66.7 VGS=10V D VOUT 10V 0V G 2SK4194LS 50 VDD 2SK4194LS P.G RGS=50 S No. A1372-2/5 2SK4194LS ID -- VDS 16 10V 15V 10 8 8V 6 4 Static Drain-to-Source On-State Resistance, RDS(on) -- 10 75C 8 6 5 10 15 20 2 6V 25 RDS(on) -- VGS 3 2 Tc=75C 25C --25C 5 6 7 8 9 10 11 12 13 14 Gate-to-Source Voltage, VGS -- V C -25 =- 2 Tc C 75 1.0 7 5 14 16 18 20 IT14272 2.5 2.0 A =3 , ID V 0 1 1.5 = V GS 1.0 0.5 --25 0 25 50 75 100 125 150 IT14274 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A SW Time -- ID 5 7 0.01 0.2 2 10 IT14275 Ciss, Coss, Crss -- pF tf td (off) 5 3 tr 2 2 3 5 7 1.0 1.0 1.2 Ciss, Coss, Crss -- VDS 1.4 IT14276 7 5 Ciss 3 2 Coss 100 7 5 3 Crss 2 10 td(on) 10 0.8 1000 2 7 0.6 f=1MHz VDD=200V VGS=10V 100 0.4 Diode Forward Voltage, VSD -- V 2 3 7 0.1 12 3.0 3 2 3 2 0.1 10 Case Temperature, Tc -- C Source Current, IS -- A 3 8 RDS(on) -- Tc 0 --50 15 C 25 6 3.5 VDS=10V 5 4 IT14273 | yfs | -- ID 7 2 Gate-to-Source Voltage, VGS -- V ID=3A 1 0 IT14271 4 0 0 30 Tc=7 5C 0 5 Forward Transfer Admittance, | yfs | -- S 25C 25C --25 C VGS=5V Drain-to-Source Voltage, VDS -- V Switching Time, SW Time -- ns 12 4 2 0 Tc= --25C 14 Drain Current, ID -- A 12 VDS=20V 16 Static Drain-to-Source On-State Resistance, RDS(on) -- Drain Current, ID -- A 14 ID -- VGS 18 Tc=25C 2 Drain Current, ID -- A 3 5 7 10 IT14277 7 5 0 10 20 30 40 Drain-to-Source Voltage, VDS -- V 50 IT14278 No. A1372-3/5 2SK4194LS VGS -- Qg 10 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 3 2 4 6 8 10 12 14 Total Gate Charge, Qg -- nC 0.5 40 60 80 100 120 140 Ambient Temperature, Ta -- C Avalanche Energy derating factor -- % 160 IT14244 EAS -- Ta 120 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.0 20 2 3 PD -- Tc 35 1.5 0 *1. Shows chip capability *2. SANYO's ideal heat dissipation condition Tc=25C Single pulse 0.01 0.1 16 2.0 0 Operation in this area is limited by RDS(on). IT14279 PD -- Ta 2.5 IDpack(*2)=5.4A 3 2 1 2 10 10 0 s 1 10 ms s 10 m 0m s DC s op er ati on IDc(*1)=6A 1.0 7 5 0.1 7 5 0 PW<10s IDP=22A 10 7 5 3 2 2 0 ASO 5 3 2 VDS=200V ID=6A 2 3 5 7 IT14246 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- C 140 160 IT14247 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- C 150 175 IT10478 No. A1372-4/5 2SK4194LS Note on usage : Since the 2SK4194LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2008. Specifications and information herein are subject to change without notice. PS No. A1372-5/5