2SK4194LS
No. A1372-1/5
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Features
• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• Adoption of high reliability HVP process.
• Attachment workability is good by Mica-less package.
• Avalanche resistance guarantee.
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 450 V
Gate-to-Source Voltage VGSS ±30 V
Drain Current (DC) IDc*1 Limited only by maximum temperature
Tch=150°C
6A
IDpack*2
Tc=25°C (SANYO’s ideal heat dissipation condition*3)
5.4 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 22 A
Allowable Power Dissipation PD2.0 W
Tc=25°C (SANYO’s ideal heat dissipation condition*3)
30 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *4 EAS 114 mJ
Avalanche Current *5 IAV 6A
Note :
*1 Shows chip capability
*2 Package limited
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=99V, L=5mH, IAV=6A
*5 L≤5mH, single pulse
Marking : K4194
D2408QB MS IM TC-00001717
SANYO Semiconductors
DATA SHEET
2SK4194LS
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
www.semiconductor-sanyo.com/network
Ordering number : ENA1372
2SK4194LS
No. A1372-2/5
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V 450 V
Zero-Gate Voltage Drain Current IDSS V
DS=360V, VGS=0V 100 μA
Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 35V
Forward T ransfer Admittance | yfs |VDS=10V, ID=3.0A1.4 2.8 S
Static Drain-to-Source On-State Resistance
RDS(on) ID=3.0A, VGS=10V 1.0 1.3 Ω
Input Capacitance Ciss VDS=30V, f=1MHz 360 pF
Output Capacitance Coss VDS=30V, f=1MHz 84 pF
Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 19 pF
Turn-ON Delay Time td(on) See specifi ed Test Circuit. 13 ns
Rise Time tr See specifi ed Test Circuit. 34 ns
Turn-OFF Delay Time td(off) See specifi ed Test Circuit. 39 ns
Fall Time tfSee specifi ed Test Circuit. 17 ns
Total Gate Charge Qg VDS=200V, VGS=10V, ID=6A 14.6 nC
Gate-to-Source Charge Qgs VDS=200V, VGS=10V, ID=6A 3.3 nC
Gate-to-Drain “Miller” Charge Qgd VDS=200V, VGS=10V, ID=6A 8.8 nC
Diode Forward Voltage VSD IS=6A, VGS=0V 0.9 1.2 V
Package Dimensions
unit : mm (typ)
7509-002
Switching Time Test Circuit Avalanche Resistance Test Circuit
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55 2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5
2.8
123
10.0
3.2
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
50Ω
≥50Ω
RG
VDD
L
10V
0V
2SK4194LS
PW=10μs
D.C.≤0.5%
P.G RGS=50Ω
G
S
D
ID=3A
RL=66.7Ω
VDD=200V
VOUT
2SK4194LS
VGS=10V
2SK4194LS
No. A1372-3/5
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Case Temperature, Tc -- °C
Drain Current, ID -- A Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Gate-to-Source Voltage, VGS -- V
ID -- VDS ID -- VGS
RDS(on) -- TcRDS(on) -- VGS
IS -- VSD
Drain Current, ID -- A
Switching Time, SW Time -- ns
SW Time -- ID
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- VDS
| yfs | -- ID
Forward T ransfer Admittance, | yfs | -- S
IT14271 IT14272
IT14273 IT14274
--50 --25 0 25 50 75 100 125 150
0
0
16
14
12
8
10
10 3052515 20
6
4
2
0
18
16
14
12
8
10
6
4
2
020181641221068 14
15V
10V
0
0.5
2.0
1.0
3.0
2.5
3.5
1.5
Tc=25°CVDS=20V
VGS=5V 6V
IT14276
0.2 0.4 0.6 0.8 1.41.21.0
0.01
0.1
10
7
5
3
2
3
2
7
5
3
2
2
1.0
7
5
3
IT14275
25°C
--25°C
Tc=75°C
0.1 23 57
1.0 10
22357
1.0
2
5
7
7
3
2
3
5VDS=10V
Tc= --25
°
C
75°C
VGS=0V
Tc= --25°C
25°C
75°C
5
0
5
1513971114610812
3
1
4
2
ID=3A
Tc=75°C
25°C
--25°C
VGS=10V, ID=3A
IT14277
10
100
3
2
2
5
7
7
3
5
0.1 1.0 10
23 57 23 57
VDD=200V
VGS=10V
td(off)
tr
tf
td(on)
0
7
100
10
1000
5
3
2
5
7
7
5
3
2
2
5010 30 4020
IT14278
f=1MHz
Ciss
Coss
Crss
8V
25
°
C
2SK4194LS
No. A1372-4/5
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
VGS -- Qg A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
0
025 50 75 100 125 150
100
80
60
20
40
120
175
EAS -- Ta
Avalanche Energy derating factor -- %
Ambient Temperature, Ta -- °C
PD -- Ta
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
IT10478
0
020 40 60 80 100 120
2.5
140 160
1.0
1.5
2.0
0.5
IT14244 IT14247
Allowable Power Dissipation, PD -- W
0
020 40 60 80 100 140120
5
10
30
25
20
35
15
160
PD -- Tc
Case Temperature, Tc -- °C
IT14246
0.01
0.1
2
3
5
7
2
1.0
3
5
7
2
0.1
10μs
100
μ
s
100ms
10ms
1ms
DC operation
1.0 10 100
23 57 23 57 723 5 23 57
10
3
5
7
5
3
2
Operation in
this area is
limited by RDS(on).
IDP=22A
IDc(*1)=6A
IDpack(*2)=5.4A
PW<10μs
*1. Shows chip capability
*2.
SANYO's ideal heat dissipation condition
Tc=25°C
Single pulse
IT14279
0
0
1
2
3
4
5
6
7
8
1612 14
10
9
610428
VDS=200V
ID=6A
2SK4194LS
No. A1372-5/5
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
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otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
PS
This catalog provides information as of December, 2008. Specifi cations and information herein are subject
to change without notice.
Note on usage : Since the 2SK4194LS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
