DG308A, DG309 S E M I C O N D U C T O R Quad Monolithic SPST CMOS Analog Switches December 1993 Features Description * * * * * The DG308A and DG309 quad monolithic SPST CMOS switches are latch proof and are designed to block signals up to 30V peak-to-peak when OFF. Featuring low ON resistance, low power consumption, and rail-to-rail analog signal range, these switches are ideally suited for high speed switching applications in communications, instrumentation and process control. The DG308A "normally-closed" and DG309 "normally-open" switches have single and dual supply capability. The input thresholds are CMOS compatible. Low Power Consumption CMOS Compatible 15V Analog Signal Range Single or Dual Supply Capability Alternate Source Ordering Information PART NUMBER TEMP. RANGE o o PACKAGE DG308AAK -55 C to +125 C 16 Lead Ceramic DIP DG308ABK -25oC to +85oC 16 Lead Ceramic DIP DG308ACK 0oC to +70oC 16 Lead Ceramic DIP DG308ACJ 0oC to +70oC 16 Lead Plastic DIP DG308ACY o o 0 C to +70 C o o 16 Lead SOIC (W) DG308AAK/883B -55 C to +125 C 16 Lead Ceramic DIP DG309AK -55oC to +125oC 16 Lead Ceramic DIP o o DG309BK -25 C to +85 C 16 Lead Ceramic DIP DG309CK 0oC to +70oC 16 Lead Ceramic DIP o o DG309CJ 0 C to +70 C 16 Lead Plastic DIP DG309CY 0oC to +70oC 16 Lead SOIC (W) DG309AK/883B o o -55 C to +125 C Pinout The DG308A and DG309 switches are available over commercial, industrial, and military temperature ranges. 16 Lead Ceramic DIP Functional Diagrams DG308A DG308A, DG309 (CDIP, PDIP, SOIC) TOP VIEW DG309 S1 IN1 IN1 1 16 IN2 D1 D1 S2 S2 D1 2 15 D2 S1 3 14 S2 GND 5 13 V+ (SUBSTRATE) 12 NC S4 6 11 S3 D4 7 10 D3 V- 4 IN4 8 S1 IN1 IN2 IN2 D2 D2 S3 S3 IN3 IN3 9 IN3 D3 D3 S4 S4 IN4 IN4 D4 NOTES: 1. Four SPST switches per package. 2. Switches shown for logic "1" input D4 TRUTH TABLE LOGIC DG308A DG309 0 OFF ON 1 ON OFF Logic "0" 3.5V, Logic "1" 11V CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright (c) Harris Corporation 1993 9-37 File Number 3120 DG308A, DG309 Typical Schematic Diagram (One Channel) DG308A V+ P1 P2 P3 S P4 P5 P6 P7 VIN N9 N8 P8 N1 N2 N3 N6 GND N7 N11 D N4 N5 V- 9-38 N10 Specifications DG308A, DG309 Absolute Maximum Ratings Thermal Information V+ to V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44V V- to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-25V VIN to Ground (Note 1) . . . . . . . . . . . . . . . . . . . . . (V- -2V), (V+ +2V) VS or VD to V+ (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . +2, (V- -2V) VS or VD to V- (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . .-2, (V+ +2V) Current, any Terminal Except S or D . . . . . . . . . . . . . . . . . . . . 30mA Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Peak Current, S or D (Pulsed at 1ms, 10% Duty Cycle Max). . . .70mA Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC Storage Temperature Range C Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65oC to +125oC A & B Suffix. . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65oC to +150oC Thermal Resistance JA JC Ceramic DIP Package . . . . . . . . . . . . . . . 80oC/W 24oC/W Plastic DIP Package . . . . . . . . . . . . . . . . 100oC/W SOIC DIP Package . . . . . . . . . . . . . . . . . 100oC/W Junction Temperature Plastic DIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150oC Ceramic DIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Operating Temperature Range "A" Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +125oC "B" Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25oC to +85oC "C" Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to +70oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications V+ = 15V, V- = -15V, GND = 0V, TA = +25oC DG308AA/DG309A PARAMETERS TEST CONDITIONS DG308AB/C, DG309B/C MIN (NOTE 2) TYP MAX MIN (NOTE 2) TYP MAX UNITS DYNAMIC CHARACTERISTICS Turn-On Time, tON See Figure 1 - 130 200 - 130 200 ns Turn-Off Time, tOFF See Figure 1 - 90 150 - 90 150 ns Charge Injection, Q CL = 1F, RS = 0, VS = 0V - -10 - - -10 - pC Source OFF Capacitance, CS(OFF) f = 140kHz VS = 0V VIN = 0V (DG308A) VIN = 15V (DG309) - 11 - - 11 - pF Drain OFF Capacitance, CD(OFF) VD = 0V VIN = 0V (DG308A) VIN = 15V (DG309) - 8 - - 8 - pF Channel ON Capacitance, CD(ON) + CS(ON) VS = VD = 0V VIN = 15V (DG308A) VIN = 0V (DG309) - 27 - - 27 - pF VIN = 0V (DG308A) VIN = 15V (DG309), RL = 75, VS = 2VP-P, f = 500kHz (Note 4) - 78 - - 78 - dB Input Current with Voltage High, IINH VIN = 15V - 0.001 1 - 0.001 1 A Input Current with Voltage Low, IINL VIN = 0V -1.0 -0.001 - -1.0 -0.001 - A -15 - 15 -15 - 15 V - 60 100 - 60 100 OFF Isolation, OIRR INPUT SWITCH Analog Signal Range, VANALOG Drain Source ON Resistance, RDS(ON) Drain ON Leakage Current, ID(ON) Source OFF Leakage Current, IS(OFF) Drain OFF Leakage Current, ID(OFF) VIN = 11V (DG308A) VIN = 3.5V (DG309) VIN = 3.5V (DG308A) VIN = 11V (DG309) IS = -1mA, VD = +10V IS = 1mA, VD = -10V - 60 100 - 60 100 VD = VS = 14V - 0.1 1 - 0.1 5 nA VD = VS = -14V -2 -0.1 - -5 -0.1 - nA VS = 14V, VD = -14V - 0.1 1 - 0.1 5 nA VS = -14V, VD = 14V -1 -0.1 - -5 -0.1 - nA VS = -14V, VD = 14V - 0.1 1 - 0.1 5 nA VS = 14V, VD = -14V -1 -0.1 - -5 -0.1 - nA - 0.001 10 - 0.001 100 A -10 -0.001 - -100 -0.001 - A POWER SUPPLY CHARACTERISTICS Positive Supply Current, I+ Negative Supply Current, I- All Channels ON or OFF VIN = 0V or 15V 9-39 Specifications DG308A, DG309 Electrical Specifications V+ = 15V, V- = -15V, GND = 0V, TA = Over Operating Temperature Range DG308AA/DG309A PARAMETERS TEST CONDITIONS DG308AB/C, DG309B/C MIN (NOTE 2) TYP MAX MIN (NOTE 2) TYP MAX UNITS INPUT Input Current with Voltage High, IINH VIN = 15V - - 1 - - 1 A Input Current with Voltage Low, IINL VIN = 0V -1 - - -1 - - A -15 - 15 -15 - 15 V IS = -1mA, VD = 10V - - 150 - - 125 IS = 1mA, VD = -10V - - 150 - - 125 SWITCH Analog Signal Range, VANALOG Drain Source ON Resistance, RDS(ON) Drain ON Leakage Current, ID(ON) Source OFF Leakage Current, IS(OFF) Drain OFF Leakage Current, ID(OFF) VIN = 11V (DG308A) VIN = 3.5V (DG309) VIN = 3.5V (DG308A) VIN = 11V (DG309) VD = VS = 14V - - 100 - - 200 nA VD = VS = -14V -200 - - -200 - - nA VS = 14V, VD = -14V - - 100 - - 100 nA VS = -14V, VD = 14V -100 - - -100 - - nA VS = -14V, VD = 14V - - 100 - - 100 nA VS = 14V, VD = -14V -100 - - -100 - - nA - - 100 - - 100 A -100 - - -100 - - A POWER SUPPLY CHARACTERISTICS Positive Supply Current, I+ VIN = 0V or 15V Negative Supply Current, INOTES: 1. Signals on VS, VD, or VIN exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. 2. Typical values are for design aid only, not guaranteed and not subject to production testing. 3. The algebraic convention whereby the most negative value is a minimum, and the most positive is a maximum, is used in this data sheet. 4. OFF isolation = 20log VD/VS, where VS = input to OFF switch, and VD = output. Test Circuits LOGIC "1" = SWITCH ON (INVERT FOR DG309) VO = VS +15V V+ S RL LOGIC INPUT tR < 20ns tF < 20ns RL + RDS(ON) 50% 50% D VO VS = 3V RL 1k IN SWITCH INPUT CL 35pF 90% 90% SWITCH OUTPUT tON GND V-15V VINH = 15V VINL = 0V FIGURE 1. tON AND tOFF SWITCHING TEST 9-40 tOFF DG308A, DG309 Die Characteristics DIE DIMENSIONS: 2058m x 2109m METALLIZATION: Type: Al Thickness: 10kA 1kA GLASSIVATION: Type: PSG Over Nitride PSG Thickness: 7kA 1.4kA Nitride Thickness:8kA 1.2kA WORST CASE CURRENT DENSITY: 9.1 x 104 A/cm2 Metallization Mask Layout DG308A, DG309 PIN 14 S2 PIN 13 V+ (SUBSTRATE) PIN 11 S3 PIN 15 D2 PIN 10 D3 PIN 16 IN2 PIN 9 IN3 PIN 1 D1 PIN 8 IN4 PIN 2 IN1 PIN 7 D4 PIN 3 S1 PIN 4 V- PIN 5 GND 9-41 PIN 6 54