CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright © Harris Corporation 1993 9-37
SEMICONDUCTOR
DG308A, DG309
Quad Monolithic SPST CMOS
Analog Switches
Description
The DG308A and DG309 quad monolithic SPST CMOS
switches are latch proof and are designed to block signals up
to 30V peak-to-peak when OFF. Featuring low ON
resistance, low power consumption, and rail-to-rail analog
signal range, these switches are ideally suited for high speed
switching applications in communications, instrumentation
and process control. The DG308A “normally-closed” and
DG309 “normally-open” switches have single and dual
supply capability. The input thresholds are CMOS
compatible.
The DG308A and DG309 switches are available over com-
mercial, industrial, and military temperature ranges.
Features
• Low Power Consumption
• CMOS Compatible
•±15V Analog Signal Range
• Single or Dual Supply Capability
• Alternate Source
Ordering Information
PART NUMBER TEMP. RANGE PACKAGE
DG308AAK -55oC to +125oC 16 Lead Ceramic DIP
DG308ABK -25oC to +85oC 16 Lead Ceramic DIP
DG308ACK 0oC to +70oC 16 Lead Ceramic DIP
DG308ACJ 0oC to +70oC 16 Lead Plastic DIP
DG308ACY 0oC to +70oC 16 Lead SOIC (W)
DG308AAK/883B -55oC to +125oC 16 Lead Ceramic DIP
DG309AK -55oC to +125oC 16 Lead Ceramic DIP
DG309BK -25oC to +85oC 16 Lead Ceramic DIP
DG309CK 0oC to +70oC 16 Lead Ceramic DIP
DG309CJ 0oC to +70oC 16 Lead Plastic DIP
DG309CY 0oC to +70oC 16 Lead SOIC (W)
DG309AK/883B -55oC to +125oC 16 Lead Ceramic DIP
File Number 3120
December 1993
Pinout
DG308A, DG309
(CDIP, PDIP, SOIC)
TOP VIEW
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
IN1
D1
S1
V-
GND
S4
IN4
D4
IN2
S2
V+ (SUB-
NC
S3
D3
IN3
D2
STRATE)
-
Functional Diagrams
IN1
S1
D1
IN2
S2
D2
IN3
S3
D3
IN4
S4
D4
DG309
IN1
S1
D1
IN2
S2
D2
IN3
S3
D3
IN4
S4
D4
DG308A
NOTES:
1. Four SPST switches per package.
2. Switches shown for logic “1” input
TRUTH TABLE
LOGIC DG308A DG309
0 OFF ON
1 ON OFF
Logic “0” ≤3.5V, Logic “1” ≥ 11V
9-38
DG308A, DG309
Typical Schematic Diagram (One Channel)
DG308A
S
D
V+
VIN
GND
V-
P1
N1
P4
P2
N2
P3
N3
N4N5
P5P6
N6
P7
N7
P8
N9
N11
N8
N10
9-39
Specifications DG308A, DG309
Absolute Maximum Ratings Thermal Information
V+ to V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44V
V- to Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-25V
VIN to Ground (Note 1) . . . . . . . . . . . . . . . . . . . . . (V- -2V), (V+ +2V)
VS or VD to V+ (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . +2, (V- -2V)
VS or VD to V- (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . .-2, (V+ +2V)
Current, any Terminal Except S or D . . . . . . . . . . . . . . . . . . . .30mA
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . .20mA
Peak Current, S or D (Pulsed at 1ms, 10% Duty Cycle Max). . . .70mA
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC
Storage Temperature Range
C Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65oC to +125oC
A & B Suffix. . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65oC to +150oC
Thermal Resistance θJA θJC
Ceramic DIP Package. . . . . . . . . . . . . . . 80oC/W 24oC/W
Plastic DIP Package . . . . . . . . . . . . . . . . 100oC/W -
SOIC DIP Package . . . . . . . . . . . . . . . . . 100oC/W -
Junction Temperature
Plastic DIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150oC
Ceramic DIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Operating Temperature Range
“A” Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +125oC
“B” Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25oC to +85oC
“C” Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to +70oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications V+ = 15V, V- = -15V, GND = 0V, TA = +25oC
PARAMETERS TEST CONDITIONS
DG308AA/DG309A DG308AB/C, DG309B/C
UNITSMIN (NOTE 2)
TYP MAX MIN (NOTE 2)
TYP MAX
DYNAMIC CHARACTERISTICS
Turn-On Time, tON See Figure 1 - 130 200 - 130 200 ns
Turn-Off Time, tOFF See Figure 1 - 90 150 - 90 150 ns
Charge Injection, Q CL = 1µF, RS = 0, VS = 0V - -10 - - -10 - pC
Source OFF Capacitance,
CS(OFF)
f = 140kHz VS = 0V
VIN = 0V (DG308A)
VIN = 15V (DG309)
-11--11-pF
Drain OFF Capacitance, CD(OFF) VD = 0V
VIN = 0V (DG308A)
VIN = 15V (DG309)
-8--8-pF
Channel ON Capacitance,
CD(ON) + CS(ON)
VS = VD = 0V
VIN = 15V (DG308A)
VIN = 0V (DG309)
-27--27-pF
OFF Isolation, OIRR VIN = 0V (DG308A)
VIN = 15V (DG309), RL = 75Ω,
VS = 2VP-P, f = 500kHz (Note 4)
-78--78-dB
INPUT
Input Current with Voltage High,
IINH
VIN = 15V - 0.001 1 - 0.001 1 µA
Input Current with Voltage Low,
IINL
VIN = 0V -1.0 -0.001 - -1.0 -0.001 - µA
SWITCH
Analog Signal Range, VANALOG -15 - 15 -15 - 15 V
Drain Source ON Resistance,
RDS(ON)
VIN = 11V
(DG308A)
VIN = 3.5V
(DG309)
IS = -1mA, VD = +10V - 60 100 - 60 100 Ω
IS = 1mA, VD = -10V - 60 100 - 60 100 Ω
Drain ON Leakage Current,
ID(ON)
VD = VS = 14V - 0.1 1 - 0.1 5 nA
VD = VS = -14V -2 -0.1 - -5 -0.1 - nA
Source OFF Leakage Current,
IS(OFF)
VIN = 3.5V
(DG308A)
VIN = 11V
(DG309)
VS = 14V, VD = -14V - 0.1 1 - 0.1 5 nA
VS = -14V, VD = 14V -1 -0.1 - -5 -0.1 - nA
Drain OFF Leakage Current,
ID(OFF)
VS = -14V, VD = 14V - 0.1 1 - 0.1 5 nA
VS = 14V, VD = -14V -1 -0.1 - -5 -0.1 - nA
POWER SUPPLY CHARACTERISTICS
Positive Supply Current, I+ All Channels ON or OFF
VIN = 0V or 15V - 0.001 10 - 0.001 100 µA
Negative Supply Current, I- -10 -0.001 - -100 -0.001 - µA
9-40
Specifications DG308A, DG309
Test Circuits
FIGURE 1. tON AND tOFF SWITCHING TEST
Electrical Specifications V+ = 15V, V- = -15V, GND = 0V, TA = Over Operating Temperature Range
PARAMETERS TEST CONDITIONS
DG308AA/DG309A DG308AB/C, DG309B/C
UNITSMIN (NOTE 2)
TYP MAX MIN (NOTE 2)
TYP MAX
INPUT
Input Current with Voltage High,
IINH
VIN = 15V - - 1 - - 1 µA
Input Current with Voltage Low,
IINL
VIN = 0V -1 - - -1 - - µA
SWITCH
Analog Signal Range, VANALOG -15 - 15 -15 - 15 V
Drain Source ON Resistance,
RDS(ON)
VIN = 11V
(DG308A)
VIN = 3.5V
(DG309)
IS = -1mA, VD = 10V - - 150 - - 125 Ω
IS = 1mA, VD = -10V - - 150 - - 125 Ω
Drain ON Leakage Current,
ID(ON)
VD = VS = 14V - - 100 - - 200 nA
VD = VS = -14V -200 - - -200 - - nA
Source OFF Leakage Current,
IS(OFF)
VIN = 3.5V
(DG308A)
VIN = 11V
(DG309)
VS = 14V, VD = -14V - - 100 - - 100 nA
VS = -14V, VD = 14V -100 - - -100 - - nA
Drain OFF Leakage Current,
ID(OFF)
VS = -14V, VD = 14V - - 100 - - 100 nA
VS = 14V, VD = -14V -100 - - -100 - - nA
POWER SUPPLY CHARACTERISTICS
Positive Supply Current, I+ VIN = 0V or 15V - - 100 - - 100 µA
Negative Supply Current, I- -100 - - -100 - - µA
NOTES:
1. Signals on VS, VD, or VIN exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
2. Typical values are for design aid only, not guaranteed and not subject to production testing.
3. The algebraic convention whereby the most negative value is a minimum, and the most positive is a maximum, is used in this data sheet.
4. OFF isolation = 20log VD/VS, where VS = input to OFF switch, and VD = output.
VO
S
IN
GND
VS = 3V
RL
1kΩCL
35pF
+15V
V+
-15VV-
VO = VSRL
RL + RDS(ON) 50%
tR < 20ns
tF < 20ns
tOFF
tON
LOGIC
INPUT
SWITCH
INPUT
SWITCH
OUTPUT
90%
D
50%
90%
VINH = 15V
VINL = 0V
LOGIC “1” = SWITCH ON (INVERT FOR DG309)
9-41
DG308A, DG309
Die Characteristics
DIE DIMENSIONS:
2058µm x 2109µm
METALLIZATION:
Type: Al
Thickness: 10kű1kÅ
GLASSIVATION:
Type: PSG Over Nitride
PSG Thickness: 7kű 1.4kÅ
Nitride Thickness:8kű 1.2kÅ
WORST CASE CURRENT DENSITY:
9.1 x 104 A/cm2
Metallization Mask Layout
DG308A, DG309
PIN 14
S2 PIN 13
V+ (SUBSTRATE) PIN 11
S3
PIN 10 D3
PIN 9 IN3
PIN 8 IN4
PIN 7 D4
PIN 6
54
PIN 5
GND
PIN 4
V-
PIN 3
S1
PIN 15
D2
PIN 16
IN2
PIN 1
D1
PIN 2
IN1
