SILICONIX INC L&E D Me 6254735 OOL4845 9 me IRFF9230/9231 (9232/9233 P-Channel Enhancement Mode Transistors Fes conix incorporated PRODUCT SUMMARY PART | Vierypss | "ps(on) Ip NUMBER ) Q) (A) IRFF9230 ~200 0.8 -4.0 IRFF9231 -180 0.8 -4.0 IRFF9232 -200 1.2 -3.5 IRFF9233 -150 1.2 -3.5 TO-205AF T=34 -1% BOTTOM VIEW 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25C Unless Otherwise Noted)! IRFF PARAMETERS/TEST CONDITIONS SYMBOL | 9230 9231 9232 9233 | UNITS Drain-Source Voltage Vos 200 150 200 150 Vv Gate-Source Voltage Ves +20 +20 20 +20 Continuous Drain Current To = 26C Ip * 4.0 4.0 3.5 3.5 To = 100C 2.5 2.5 2.2 2.2 A Pulsed Drain Curent? lpm 16 16 14 14 Avalanche Current (See Figure 9) la 4.0 4.0 3.5 3.6 Power Dissipation To = 25C Pp 25 25 25 25 Ww To = 100C 10 10 10 10 Operating Junction & Storage Temperature Range | Ty, Tstg -55 to 150 C Lead Temperature ('/;," from case for 10 sec.) TL 300 THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL. TYPICAL MAXIMUM UNITS Junction-to-Case Rinsc 5.0 KAW Junction-to-Ambient Rina 176 \Negative signs for current and voltage ratings have been omitted for the sake of clarity. 2Pulso width limited by maximum Junction temperature (refer to transient thermal impedance data, Figure 11). 4-265SILICONIX INC 14E D MM 6254735 OOL4Y84b O mm IRFF9230/9231/9232/9233 $F Biliconix incorporated BUECTRICAL CHARACTERISTICS (Ty = 25C Unless Otherwise Noted) T-39- 19 nel Device - Negative Signs Have Been Omitted for Clarity LIMITS PARAMETER SYMBOL TEST CONDITIONS TYP MIN | MAX | UNIT STATIC Breakdown tage | InFFazst; casa | @*PSS Nos = ON. lo = 250 nA 180 v Gate Threshold Voltage Vestn) Vos = Ves, tp = 250 HA 2.0 4.0 Gate-Bady Leakage less Vos = OV, Vag = 20V +100 | nA | Zero Gate Voltage Drain Current loss Vos = Vienjoss: Vas = OV 250 | pa Vos = 0.8X Vignioss: Vag = OV, Ty = 125C 1000 On-Stats Drain IRFF9220, 9231 loxony Vps = 5V, Vas = 10V 4.0 A Current! IRFF9232, 9233 3.5 Drain-Source On-State | IRFF9230, 9231 Ves = 10V, Ip = 2A 0.60 0.80 Resistancet IRFF9232, 9233 Tos(on) 0.80 1.20 a IRFF9230, 9231 Vas = 10V,Ip = 2A 1.0 16 IRFF9232, 9233 Ty = 125C 1.6 24 Forward Transconductance! Ors Vos = 18V, Ip = 2A 24 22 8s DYNAMIC Input Capacitance Css 630 Output Capacitance Coss Vas = OV, Vos = 25V,f = 1 MHz 220 pF Reverse Transfer Capacitance Crs 70 Total Gate Charge? Qg 24.5 18 45 Gate-Source Charge? Qys Vos = 0.5xVennss Ves = 10V.Ipb=4A | 34 2 10 nc Gate-Drain Charge? Qo 12 6 21 Tum-On Delay Time? taton) 65 60 Rise Time? t Voo = 100V, R, = 50:0 30 100 | ns Tum-Off Delay Time? tatom Ip 2A, Van = 10V, Rg = 250, 35 100 Fail Time? t 21 80 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T, = 25C) Continuous Current | IRFF9230, 9231 Is 4.0 IRFF9232, 9233 3.5 A Pulsed Current? IRFF9230, 9231 tom 16 IRFF9232, 9233 14 Forward Voltaget IRFF9230, 9231 Vsp lp = Ig. Vag = OV 65 v IRFF9232, 9233 63 Reverse Recovery Time ti lz = Ig, dip/dt = 100 A/is 160 ns Reverse Recovery Charge Qn 1.6 peo IPulse test: Pulse Width < 300 psec, Duty Cycle < 2%. independent of operating temperatura, Pulse width limitad by maximum junction temperature (refer to transient thermal impedance data, Figure 11). 4-266* t a= SILICONIX INC L6E D MM 6254735 OOL4847 2 SE os _ IRFF9230/9231/9232/9233 TYPICAL CHARACTERISTICS (25C Unless Otherwise Specified) : T-39-19 Figure 1, Output Characteristics Figure 2, Transfer Characteristics 12.5 Tey 5 t eC as* To= -55C 25 9V 4- 125C ~ 10.0 < 4 5 5 7.5 = 3 3 3 i z z = 5.0 = 2 Q Qa U ' 2 25 2 4 0 0 0 2 4 6 8 10 0 2 4 6 8 10 Vog - DRAIN-TO-SOURCE VOLTAGE (V) Vas - GATE-TO-SQURCE VOLTAGE (vy) Figure 3. Transconductance Figure 4. On-Resistance 1,50 To= ~55C = | @ G 1.26 Vag2 10 V Oo Ww / # 2 1.00 FA - a 2 = 2 H 0.76 1 Le 8 & La 4a 20V & 1 0.50 pe] " ae a B 0.25 a 0 0 25 60 7.8 10.0 12.6 0 5 10 15 20 25 Ip - DRAIN CURRENT (A) Ip - DRAIN CURRENT (A) Figure 5. Capacitance Figure 6. Gate Charge 1250 15.0 r = YW @ 12.5 Q 12, ge 1000 5 0.5 X VieRDss Ss & Q VA uw 10.0 9 750 8 Yd 3 75 7 0.8 x Vierypss QO g < 500 3 i 8.0 | 1 E | oO 250 1 2.5 Ipa4Aa a g : sf |_| 0 0 0 10 20 30 40 50 0 10 20 30 40 50 Vos - DRAIN-TO-SOURCE VOLTAGE (V) Q, - TOTAL GATE CHARGE (nc) 4-267SILICONIX INC joe > mm a2suras 004848 4 mm IRFF9230/9231/9232/9233 F Siliconix incorporated TYPICAL CHARACTERISTICS (Cont'd) : , J-39-19 Figure 7, On-Resistance vs. Junction Temperature Figure 8 Source-Drain Diode Forward Voltage 2.26 200 2.00 = 100 1.78 6 <i i HY 1.50 Bo 3 Ww cs wi gm 1.25 2 10 09 > z 5 2 1.00 1 2 2B 0.75 0.50 1 -0 39-10 30 70 110 150 0 1 2 3 4 5 T; - JUNCTION TEMPERATURE (C) Vsp - SOQURCE-TO-DRAIN VOLTAGE (V) THERMAL RATINGS Figure 9, Maximum Avalanche and Drain Current vs. Case Temperature Figure 10. Safe Operating Area 100 = z g a if 3 o = 3 By ' 2 1 0.1 DC Q 25 50 75 #100 125 150 2 10 100 1000 Te - CASE TEMPERATURE (C) Vos - DRAIN-TO-SOURCE VOLTAGE (Vv) Operation In this area may be limited by Fosion) Figure 14. Normalized Effective Transient Thermal Impedance, Junction-to-Case ad NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 0.01 10% 107 109 1072 1071 1 SQUARE WAVE PULSE DURATION (sec) 4-268