NCR169DRLRAG - ON Semiconductor - Datasheet.Directory

October, 2005 − Rev. 1 1Publication Order Number:

NCR169D/D

NCR169D

General Purpose

Sensitive Gate

Silicon Controlled Rectifier

Reverse Blocking Thyristor

PNPN device designed for line-powered general purpose

applications such as relay and lamp drivers, small motor controls, gate

drivers for larger thyristors, and sensing and detection circuits.

Supplied in a cost effective plastic TO-226AA package.

Features

•Sensitive Gate Allows Direct Triggering by Microcontrollers and

Other Logic Circuits

•On−State Current Rating of 0.8 Amperes RMS at 80°C

•Surge Current Capability − 10 Amperes

•Immunity to dV/dt − 20 V/μsec Minimum at 110°C

•Glass-Passivated Surface for Reliability and Uniformity

•Device Marking: NCR169D, Date Code

•Pb−Free Packages are Available

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

Peak Repetitive Off−State Vo ltage (Note 1.)

(TJ = *40 to 110°C, Sine Wave, 50 to

60 Hz; Gate Open)

VDRM,

VRRM 400 Volts

On-State RMS Current

(TC = 80°C) 180° Conduction Angles IT(RMS) 0.8 Amp

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave, 60 Hz,

TJ = 25°C)

ITSM 10 Amps

Circuit Fusing Consideration (t = 10 ms) I2t 0.415 A2s

Forward Peak Gate Power

(TA = 25°C, Pulse Width v 1.0 μs) PGM 0.1 Watt

Forward Average Gate Power

(TA = 25°C, t = 20 ms) PG(AV) 0.10 Watt

Forward Peak Gate Current

(TA = 25°C, Pulse Width v 1.0 μs) IGM 1.0 Amp

Reverse Peak Gate Voltage

(TA = 25°C, Pulse Width v 1.0 μs) VGRM 5.0 Volts

Operating Junction Temperature Range

@ Rate VRRM and VDRM TJ−40 to

110 °C

Storage Temperature Range Tstg −40 to

150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

SCR

0.8 AMPERES RMS

400 VOLTS

TO−92

(TO−226AA)

CASE 029

STYLE 10

PIN ASSIGNMENT

Gate

Anode

Cathode

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

MARKING

DIAGRAM

A = Assembly Location

L = Wafer Lot

Y = Year

WW = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

NCR

169D

ALYWWG

123

http://onsemi.com

NCR169D

http://onsemi.com

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance − Junction to Case

− Junction to Ambient RθJC

RθJA 75

200 °C/W

Lead Solder Temperature

(t1/16″ from case, 10 secs max) TL260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Peak Repetitive Forward or

Reverse Blocking Current (Note 1.) TC = 25°C

(VD = Rated VDRM and VRRM; RGK = 1.0 kΩ)T

C = 110°C

IDRM, IRRM −

−−

−10

0.1 μA

ON CHARACTERISTICS

Peak Forward On−State Voltage(*)

(ITM = 1.0 Amp Peak @ TA = 25°C) VTM − − 1.7 Volts

Gate Trigger Current (Continuous dc) (Note 2.) TC = 25°C

(VAK = 12 V, RL = 100 Ohms) IGT − 40 200 μA

Holding Current (Note 2.) TC = 25°C

(VAK = 12 V, IGT = 0.5 mA) TC = −40°CIH−

−0.5

−5.0

10 mA

Latch Current TC = 25°C

(VAK = 12 V, IGT = 0.5 mA, RGK = 1.0 k) TC = −40°CIL−

−0.6

−10

15 mA

Gate Trigger Voltage (Continuous dc) (Note 2.) TC = 25°C

(VAK = 12 V, RL = 100 Ohms, IGT = 10 mA) TC = −40°CVGT −

−0.62

−0.8

1.2 Volts

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off−State Voltage

(VD = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms,

TJ = 110°C)

dV/dt 20 35 − V/μs

Critical Rate of Rise of On−State Current

(IPK = 20 A; Pw = 10 μsec; diG/dt = 1.0 A/μsec, Igt = 20 mA) di/dt − − 50 A/μs

*Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%.

1. RGK = 1000 Ohms included in measurement.

2. Does not include RGK in measurement.

NCR169D

http://onsemi.com

+ Current

+ Voltage

VTM

IDRM at VDRM

Symbol Parameter

VDRM Peak Repetitive Off State Forward Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Off State Reverse Voltage

IRRM Peak Reverse Blocking Current

VTM Peak on State Voltage

IHHolding Current

Voltage Current Characteristic of SCR

Anode +

on state

Reverse Blocking Region

(off state)

Reverse Avalanche Region

Anode −

Forward Blocking Region

IRRM at VRRM

(off state)

Figure 1. Typical Gate Trigger Current versus

Junction Temperature

TJ, JUNCTION TEMPERATURE (°C)

100

1105035205−10−25−40

GATE TRIGGER CURRENT ( A)

Figure 2. Typical Gate Trigger Voltage versus

Junction Temperature

TJ, JUNCTION TEMPERATURE (°C) 110655035205−10−25−40

0.8

0.7

0.6

0.5

0.4

0.3

GATE TRIGGER VOLTAGE (VOLTS)

0.2

0.9

1.0

958065

9580

NCR169D

http://onsemi.com

Figure 3. Typical Holding Current versus

Junction Temperature

TJ, JUNCTION TEMPERATURE (°C)

1000

100

110655035205−10−25−40

HOLDING CURRENT ( A)

Figure 4. Typical Latching Current versus

Junction Temperature

Figure 5. Typical RMS Current Derating

IT(RMS), RMS ON-STATE CURRENT (AMPS)

120

110

100

0.50.40.30.20.10

TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)°

Figure 6. Typical On−State Characteristics

VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)3.53.22.32.01.71.41.10.80.5

IT, INSTANTANEOUS ON−STATE CURRENT (AMPS)

0.140

9580

TJ, JUNCTION TEMPERATURE (°C)

1000

100

110655035205−10−25−40

LATCHING CURRENT ( A)

10 9580

30°60°90°120°

180°

2.92.6

MAXIMUM @ TJ = 110°C

MAXIMUM @ TJ = 25°C

NCR169D

http://onsemi.com

TO−92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL

H2A H2A

P2 P2

P1 P

H2B H2B

H4 H5

Figure 7. Device Positioning on Tape

Symbol Item

Specification

Inches Millimeter

Min Max Min Max

DTape Feedhole Diameter 0.1496 0.1653 3.8 4.2

D2 Component Lead Thickness Dimension 0.015 0.020 0.38 0.51

F1, F2 Component Lead Pitch 0.0945 0.110 2.4 2.8

HBottom of Component to Seating Plane .059 .156 1.5 4.0

H1 Feedhole Location 0.3346 0.3741 8.5 9.5

H2A Deflection Left or Right 0 0.039 0 1.0

H2B Deflection Front or Rear 0 0.051 0 1.0

H4 Feedhole to Bottom of Component 0.7086 0.768 18 19.5

H5 Feedhole to Seating Plane 0.610 0.649 15.5 16.5

LDefective Unit Clipped Dimension 0.3346 0.433 8.5 11

L1 Lead Wire Enclosure 0.09842 − 2.5 −

PFeedhole Pitch 0.4921 0.5079 12.5 12.9

P1 Feedhole Center to Center Lead 0.2342 0.2658 5.95 6.75

P2 First Lead Spacing Dimension 0.1397 0.1556 3.55 3.95

TAdhesive Tape Thickness 0.06 0.08 0.15 0.20

T1 Overall Taped Package Thickness − 0.0567 − 1.44

T2 Carrier Strip Thickness 0.014 0.027 0.35 0.65

WCarrier Strip Width 0.6889 0.7481 17.5 19

W1 Adhesive Tape Width 0.2165 0.2841 5.5 6.3

W2 Adhesive Tape Position .0059 0.01968 .15 0.5

NOTES:

1. Maximum alignment deviation between leads not to be greater than 0.2 mm.

2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.

3. Component lead to tape adhesion must meet the pull test requirements.

4. Maximum non−cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.

5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.

6. No more than 1 consecutive missing component is permitted.

7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.

8. Splices will not interfere with the sprocket feed holes.

NCR169D

http://onsemi.com

ORDERING & SHIPPING INFORMATION: MCR100 Series packaging options, Device Suffix

Device Description of TO92 Tape Orientation Shipping

NCR169D N/A, Bulk Bulk in Box (5K/Box)

NCR169DG N/A, Bulk Bulk in Box (5K/Box)

(Pb−Free)

NCR169DRLRA Round side of TO92 and adhesive tape visible Radial Tape and Reel (2K/Reel)

NCR169DRLRAG Round side of TO92 and adhesive tape visible Radial Tape and Reel (2K/Reel)

(Pb−Free)

NCR169DRLRM Flat side of TO92 and adhesive tape visible Radial Tape and Fan Fold Box (2K/Box)

NCR169DRLRMG Flat side of TO92 and adhesive tape visible Radial Tape and Fan Fold Box (2K/Box)

(Pb−Free)

NCR169DRLRP Flat side of TO92 and adhesive tape visible Radial Tape and Fan Fold Box (2K/Box)

NCR169DRLRPG Flat side of TO92 and adhesive tape visible Radial Tape and Fan Fold Box (2K/Box)

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

NCR169D

http://onsemi.com

PACKAGE DIMENSIONS

STYLE 10:

PIN 1. CATHODE

2. GATE

3. ANODE

TO−92 (TO−226AA)

CASE 029−11

ISSUE AL

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 −−− 12.70 −−−

L0.250 −−− 6.35 −−−

N0.080 0.105 2.04 2.66

P−−− 0.100 −−− 2.54

R0.115 −−− 2.93 −−−

V0.135 −−− 3.43 −−−

NCR169D

http://onsemi.com

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, af filiates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

NCR169D/D

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

For additional information, please contact your

local Sales Representative.