GBU8A, GBU8B, GBU8D, GBU8G, GBU8J, GBU8K, GBU8M
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Revision: 02-Apr-15 1Document Number: 88616
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• High case dielectric strength of 1500 VRMS
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for monitor, TV, printer, power supply, switching
mode power supply, adapter, audio equipment, and home
appliances applications.
MECHANICAL DATA
Case: GBU
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
Notes
(1) Unit case mounted on aIuminum plate heatsink
(2) Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
PRIMARY CHARACTERISTICS
Package GBU
IF(AV) 8.0 A
VRRM 50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IFSM 200 A
IR5 μA
VF at IF = 8.0 A 1.0 V
TJ max. 150 °C
Diode variations In-Line
Case Style GBU
- ~ ~ +
Case Style GBU
+
~
~
-
~
~
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K GBU8M UNIT
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward
rectified output current at
TC = 60 °C IF(AV) (1) 8.0 A
TA = 40 °C IF(AV) (2) 3.9
Peak forward surge current single sine-wave
super-imposed on rated load IFSM 200 A
Rating for fusing (t < 8.3 ms) I2t 166 A2s
Operating junction and storage
temperature range TJ, TSTG -55 to +150 °C
GBU8A, GBU8B, GBU8D, GBU8G, GBU8J, GBU8K, GBU8M
www.vishay.com Vishay General Semiconductor
Revision: 02-Apr-15 2Document Number: 88616
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Units case mounted on aIuminum plate heatsink
(2) Units mounted in free air, no heatsink on PCB, 0.5" x 0.5" (12 mm x 12 mm) copper pads, 0.375" (9.5 mm) lead length
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screws
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Derating Curve Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K GBU8M UNIT
Maximum
instantaneous forward
voltage drop per diode
8.0 A VF 1.0 V
Maximum DC reverse
current at rated DC
blocking voltage per diode
TA = 25 °C
IR
5.0
μA
TA = 125 °C 500
Typical junction
capacitance per diode 4 V, 1 MHz CJ 68 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K GBU8M UNIT
Typical thermal resistance RJA (2) 20 °C/W
RJC (1)(3) 4.0
ORDERING INFORMATION
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
GBU8J-E3/45 3.857 45 20 Tube
GBU8J-E3/51 3.857 51 250 Paper tray
050 100 150
0
2.0
4.0
6.0
8.0
25 75 125
Average Forward Output Current (A)
Temperature (°C)
Heatsink Mounting, TC
PCB Mounting, TA
0.47" x 0.47" (12 mm x 12 mm)
Copper Pads 0.375" (9.5 mm) Lead
Length 60 Hz Resistive or Inductive Load
110 100
0
50
100
150
200
250
T
J
= 150 °C
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
GBU8A, GBU8B, GBU8D, GBU8G, GBU8J, GBU8K, GBU8M
www.vishay.com Vishay General Semiconductor
Revision: 02-Apr-15 3Document Number: 88616
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.01
1
100
10
0.1
InstantaneousForward Current (A)
InstantaneousForward Voltage (V)
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
0.01
0.1
1
10
100
1000
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (μA)
Percent of Rated Peak Reverse Voltage (%)
TA= 150 °C
TA= 125 °C
TA= 100 °C
TA= 25 °C
10
100
1000
10 000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
TJ= 25 °C
f = 1.0 MHz
Vsi
g
= 50 mV
p
-
p
100
0.01 0.1 110 100
0.1
1
10
t - Heating Time (s)
Tran sient Thermal Impedance (°C/W)
Case Type GBU
Polarity shown on front side of case, positive lead by beveled corner
0.125 (3.2) x 45°
Chamfer
0.085 (2.16)
0.065 (1.65)
0.020 R (TYP.)
0.880 (22.3)
0.860 (21.8)
0.160 (4.1)
0.140 (3.5)
0.075
(1.9) R
.
0.080 (2.03)
0.060 (1.52)
0.050 (1.27)
0.040 (1.02)
0.080 (2.03)
0.065 (1.65) 0.210 (5.33)
0.190 (4.83)
0.140 (3.56)
0.130 (3.30)
9° TYP.
5° TYP.
0.085 (2.16)
0.075 (1.90)
0.026 (0.66)
0.020 (0.51)
0.310 (7.9)
0.290 (7.4)
0.740 (18.8)
0.720 (18.3)
0.710 (18.0)
0.690 (17.5)
0.100 (2.54)
0.085 (2.16)
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Revision: 08-Feb-17 1Document Number: 91000
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