REV. 0
–2–
ADM223/ADM230L–ADM241L–SPECIFICATIONS
VCC = +5 V 6 5% (ADM230L, 33L, 35L, 37L); V+ = 7.5 V to 13.2 V (ADM231L & ADM239L); C1–C4 = 1.0 mF Ceramic. All Specifications TMIN to
TMAX unless otherwise noted.)
Parameter Min Typ Max Units Test Conditions/Comments
Output Voltage Swing ±5±9 Volts All Transmitter Outputs Loaded with 3 kΩ to Ground
V
CC
Power Supply Current 2 3.0 mA No Load, All T
INS
= V
CC
(Except ADM223)
3.5 6 mA No Load, All T
INS
= GND
0.4 1 mA ADM231L, ADM239L
V+ Power Supply Current 1.5 4 mA No Load, V+ = 12 V ADM231L & ADM239L Only
Shutdown Supply Current 1 5 µA
Input Logic Threshold Low, V
INL
0.8 V T
IN
, EN, SD, EN, SD
Input Logic Threshold High, V
INH
2.0 V T
IN
, EN, SD, EN, SD
Logic Pull-Up Current 10 25 µAT
IN
= 0 V
RS-232 Input Voltage Range –30 +30 V
RS-232 Input Threshold Low 0.8 1.2 V
RS-232 Input Threshold High 1.7 2.4 V
RS-232 Input Hysteresis 0.2 0.5 1.0 V
RS-232 Input Resistance 3 5 7 kΩ
TTL/CMOS Output Voltage Low, V
OL
0.4 V
TTL/CMOS Output Voltage High, V
OH
3.5 V I
OUT
= –1.0 mA
TTL/CMOS Output Leakage Current 0.05 ±5µAEN = V
CC
, 0 V ≤ R
OUT
≤ V
CC
Output Enable Time (T
EN
) 250 ns ADM223, ADM235L, ADM236L, ADM239L, ADM241L
(Figure 25. C
L
= 150 pF)
Output Disable Time (T
DIS
) 50 ns ADM223, ADM235L, ADM236L, ADM239L, ADM241L
(Figure 25. R
L
= 1 kΩ)
Propagation Delay 0.5 µs RS-232 to TTL
Instantaneous Slew Rate
1
25 30 V/µsC
L
= 10 pF, R
L
= 3-7 kΩ, T
A
= +25°C
Transition Region Slew Rate 5 V/µsR
L
= 3 kΩ, C
L
= 2500 pF
Measured from +3 V to –3 V or –3 V to +3 V
Output Resistance 300 ΩV
CC
= V+ = V– = 0 V, V
OUT
= ±2 V
RS-232 Output Short Circuit Current ±10 mA
NOTE
1
Sample tested to ensure compliance.
Specifications subject to change without notice.
Thermal Impedance, θ
JA
N-14 DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140°C/W
N-16 DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135°C/W
N-20 DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
N-24 DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120°C/W
N-24A DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110°C/W
R-16 SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105°C/W
R-20 SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105°C/W
R-24 SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85°C/W
R-28 SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80°C/W
RS-28 SSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W
Q-14 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105°C/W
Q-16 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W
Q-20 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W
Q-24 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55°C/W
D-24 Ceramic . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W
Operating Temperature Range
Commercial (J Version) . . . . . . . . . . . . . . . . . . . 0 to +70°C
Industrial (A Version) . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . –65°C to + 150°C
Lead Temperature, Soldering . . . . . . . . . . . . . . . . . . +300°C
Vapour Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2000 V
*This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the operational sections of this specifi-
cation is not implied. Exposure to absolute maximum rating conditions for
extended periods of time may affect reliability.
VCC = +5 V 6 10% (ADM223, 31L,
32L, 34L, 36L, 38L, 39L, 41L);
ABSOLUTE MAXIMUM RATINGS*
(T
A
= 25°C unless otherwise noted)
V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . .(V
CC
– 0.3 V) to +14 V
V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –14 V
Input Voltages
T
IN
. . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to (V
CC
+ 0.3 V)
R
IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30 V
Output Voltages
T
OUT
. . . . . . . . . . . . . . . . . . (V+, + 0.3 V) to (V–, – 0.3 V)
R
OUT
. . . . . . . . . . . . . . . . . . . . . . . –0.3 V to (V
CC
+ 0.3 V)
Short Circuit Duration
T
OUT
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Continuous
Power Dissipation
N-14 DIP (Derate 10 mW/°C above +70°C) . . . . . 800 mW
N-16 DIP (Derate 10.5 mW/°C above +70°C) . . . 840 mW
N-20 DIP (Derate 11 mW/°C above +70°C) . . . . . 890 mW
N-24 DIP (Derate 13.5 mW/°C above +70°C) . . 1000 mW
N-24A DIP (Derate 13.5 mW/°C above +70°C) . . 500 mW
R-16 SOIC (Derate 9 mW/°C above +70°C) . . . . . 760 mW
R-20 SOIC (Derate 9.5 mW/°C above +70°C) . . . 800 mW
R-24 SOIC (Derate 12 mW/°C above +70°C) . . . . 850 mW
R-28 SOIC (Derate 12.5 mW/°C above +70°C) . . 900 mW
RS-28 SSOP (Derate 10 mW/°C above +70°C) . . . 900 mW
Q-14 Cerdip (Derate 10 mW/°C above +70°C) . . . 720 mW
Q-16 Cerdip (Derate 10 mW/°C above +70°C) . . . 800 mW
Q-20 Cerdip (Derate 11.2 mW/°C above +70°C) . . . 890 mW
Q-24 Cerdip (Derate 12.5 mW/°C above +70°C) . . 1000 mW
D-24 Ceramic (Derate 20 mW/°C above +70°C) . . 1000 mW