P.O. BOX 609 • ROCKPORT, MAINE 04856 • 207-236-6076 • FAX 207-236-9558
SILICON HYPERABRUPT
TUNING DIODES
•• High capacitance ratios
•• Linear tuning between 2 and 8 volts
•• Available over a broad range junction capacitances
•• Satisfies a large number of broadband applications thru the VHF frequency band
KSV1401 - KSV1412
DIODE CAPACITANCE TUNING RATIO (TR) QUALITY FACTOR
PART (CT) C•1V / C•10V C•2V / C•10V Q
NUMBER pF @ 1V•1 MHz pF @ 2V•1 MHz @ 1 MHz @ 1 MHz @ 2V • 1 MHz
MIN MAX MIN MAX MIN MIN MIN
KSV1401 440 660 14:1 200
KSV1402 45 69 10:1 200
KSV1403 140 210 10:1 200
KSV1404 96 144 10:1 200
KSV1405 200 300 10:1 200
KSV1406 80 120 10:1 200
KSV1407 54 82 10:1 200
KSV1408 37 57 10:1 200
KSV1409 26 40 10:1 200
KSV1410 17 27 9.5:1 200
KSV1411 12 18 8.5:1 200
KSV1412 8 12 7.5:1 200
Package Style DO-7
Device Dissipation (PD) TA = 25°C 400 mW
Junction Temperature (TJ) 175°C
Reverse Breakdown Voltage (VBR) 10 µAdc 12 Vdc Min
Max Reverse Leakage Current (IR) Vr = 10 Vdc 0.1 µAdc
Operating Temperature (Topr) -55° to + 150°C
Storage Temperature (Tstg) -65° to + 200°C
Capacitance Tolerance Standard Device ± 20%
Suffix A ± 10%
Suffix B ± 5%
To order devices screened to MIL-PRF-19500 JANTX level, Appendix E, Table IV add suffix H.
