Yy ut This material and the Information herein is the property of Fuji Electnc Co.Ltd. They shall be neither mproduced. copied. lent. or disclosed in any way whatsoever for the use of an third party.nor used for the manufacturing purposes witho the express written consent of Fuji Electric Co., Ltd, Messrs. Rockwell Automation SPEGIFICAT ION Device Name: IGBT Module Type Name 7MBR35SB140-01 Spec. No. MS6M 0556 Date : Jun. ~ 02 - 2000 Fuji Electric Co.,Ltd. Matsumoto Factory oN] DATE NAME | APPROVED Fuji Electric Co.Ltd. DRAWN Sun. - 2 ~'e0 4 KN uh 4 CHECKED Tue -2 -00) 9, gta; DWGNO, Figo MS6M 0556) HO04-004-05Approved 10 H04-004-06 2 Checked Drawn MR ay 7 Rebg oh S, Ligh | 77Hypabe Applied date Issued date MS6M 0556 ONG wis (Ps/it) Content Revised ype Ind. Revised Records Classi- fication enactment Reviste Fuji Electric Co.Ltd. - to Date Jun. ~ 2 nv l4- 66 Ju "pry OD 9119a)/3 Ing yO JUasUOD VallM ssaidxa ay inom sasodind Gur deNuew ay) 10) pasn soUALIe Psryl Aue yO asn ayi 10) s9AaOSIEYM Aem Aue Ul PasosISIP 40 1U9| paidod paanpaday seyau oq yeys Ady] PIT"0D Iu19a43 wIny 49 Aysadord ay s1 utesay vore wot aig PUR jeaIew sigsFuji Electnc Co Ltd. They shall be neither reproduced. copied lent, or disclosed in any way whatsoever for the use of any third party.nor used for the manufacturing purposes without This material and the information herein is the property of the express written consent of Fuji Electric Co.. Ltd. 7MBR35SB140-01 1. Outline Drawing ( Unit : mm) 1221 8-R2 25 20.3 110+#0.3 \ [13.09] [15.24] [19.05 19.05} | 15.24 |] 3.81x4= 15.24] 4-5 540.3 ~ \N 14,579. ~T l BS) PE f if 1 1 5 Se ( x0. -| 2 2 a | 3 a} 2) + - 344 - - - + - - - -_ - ___ - -_| L2H fai] A eels Sy ~ < mM wo g t is | e ~ Vn a Oh W Titre 2 3 at 6 Ty2 3.81 A A go ~ wn [4.055] | |{14J999 | [15.24] | [15,24] | [15.24] | [15.24] | [15.24] ] [22/6] = \ | 94.520.3 42,5 :0.1 $2.1 40.1 mbm . =f om R{ 2 iy | 2 1" J Rais of vel SECTION A-A 6] 5/2 oln| 2 | N _ * me N | Vo Py t R uw . . . iS [-]shows theoretical dimension, 2. Equivalent circuit [ Converter ] { Brake ] { Inverter ] { Thermistor } 21 (P) 22(P1) Siararca 19 (Eu) g-_5 Tey) _0 Sten) 7B) sy) 5() q 6) el 13 ot 12 oh ok Oo o * oO 23.(N) 24 (NI) 10(En) S 3 A Fuji Electric Co.Ltd. g| MS6M 0556 Ao H04-004-03Fuji Electne Co Lid. They shall be neither reproduced. copied. lent, or disclosed in any way whatsoever far the use of any third party.nor used for the manufacturing purposes without This matecial and the information herein is the property of the express written consent of Fuji Electric Co. Ltd. 3. Absolute Maximum Ratings (at Tc= 25C unless otherwise specified ) Items Symbols Conditions Maximum | nits Ratings Cotlector-Emitter voltage VCES 1400 Vv Gate-Emitter voltage VGES +-20 Vv Ic Continuous} Tc=25C 50 A 6 Tc=75C 35 g Collector current lep ims Tc=25C 100 A ~ Tc=75C 70 -Ic 35 A Collector Power Dissipation Pc 1 device 240 WwW Collector-Emitter voltage VCES 1400 Vv Gate-Emitter voltage VGES +-20 V Ic Continuous| Tc=25C 35 A a {Collector current Te=75C 25 iS Icp tms Tc=25C 70 A a Tc=75C 50 Collector Power Dissipation Pc 1 device 180 Ww Repetitive peak reverse Voltage(Diode) VRRM 1400 V Repetitive peak reverse Voltage VRRM 1600 V Average Output Current lo SOHZ/60Hz 35 A sine wave & |Surge Current (Non-Repetitive) IFSM Tj=150C,10ms 360 A ania (Non-Repetitive) rt half sine wave 648 As Junction temperature Tj 150 Cc Storage temperature Tstg -40~ +125 Cc Isolation _| between terminal and copper base Viso AC: 1min. 2500 Vv voltage _|between thermistor and others * 2500. V Mounting Screw Torque 3.5 Nm (*1) All terminals should be connected together when isolation test will be done. (*2) Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base. (*3) Recommendable Value: 2.5~3.5 Nm (M5) - . | 4, {8 Fuji Electric Co.Ltd. g MS6M 0556 "ig po HO04004-03Fuji Electne Co.Ltd. They shall be neither reproduced, copied lent. or disclosed in any way whatsoever for the use of any third party.nor used for the manufacturing purposes without This material and the information herein is the property of the express written consent of Fuji Electric Co.. Ltd. 4. Electrical characteristics (at Tj= 25C unless otherwise specified) Characteristics . Items Symbols Conditions min. typ. Max.-] Units Gate-Emitter leakage current IGES |VCE= OV, VGE= +-20 V 200 nA threshold weltage VGE(th) |VCE= 20V,Ic= 35mA) 55 | 72 | 85 | V Collector-Emitter VCE(sat) |VGE= 15 V, chip 2.2 Vv saturation voltage Ic = 35 A jterminal 2.35 2.7 _ {Input capacitance Cies |VGE= OV, VCE= 10V 4200 pF e f= 1 MHz = \Tum-on time fon |Vec= 800 V 0.a5 | 1.2 ir le= = 5A 0.25 | 0.6 try VGE = +-15 V 0.1 us Turn-off time toff RG= 33 ohm 0.45 1.0 tf 0.08 0.3 Forward on voltage VF IF = 35 A |chip 2.4 Vv terminal 2.55 3.4 Reverse recovery time trr IF = 35 A 350 ns eae ene Ices [VGE= OV, VCE= 1400 V 1.0 | mA Gate-Emitter leakage current IGES |VCE= OV, VGE +-20V 200 nA Collector-Emitter VcE(sat) |VGE= 15 V,|chip 2.2 Vv saturation voltage Ic = 25 A |terminal 2.35 2.8 |Turn-on time ton Vec= 800 V 0.35 1.2 tr jic= 25A 0.25 | 0.6 | us Turn-off time toff VGE = +-15 V 0.45 1.0 tf RG= 51 ohm 0.08 0.3 Reverse current IRRM IVR= 1400 V 1.0 mA S Forward on voltage VFM |IF= 35 A |chip 1.1 Vv > terminal 1.2 | 1.5 S [Reverse current IRRM |VR= 1600 V 1.0 | mA & |Resistance R T= 25C 5000 ohm E T =100C 465 | 495 | 520 = B value B- |T= 25/500 3305 | 3375 | 3450 K 5. Thermal resistance characteristics Characteristics Items Symbols Conditions min. typ. Max. | Units Inverter IGBT 0.52 Thermal resistance Rth(j-c) |Inverter FWD 0.90 | C/W (1 device) Brake IGBT 0.69 Converter Diode 0.75 Contact Thermal resistance Rth(c-f} [with Thermal Compound ) 0.05 C/W * This is the value which is defined mounting on the additional cooling fin with thermal compound. Fuji Electric Co.Ltd. DWG.NO. MS6M 0556 Aro H04-004-03This materiat and the information herein is the property of Fuji Electnc Co.Ltd. They shall be neither reproduced. copied tent, ac disclosed in any way whatsoever for the use of any third party.nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.. Ltd. 6. Indication on module Lot No. for Fuji SOSP140-01 | Se i: i TTT tu ANTICS THT | \ Lot No.(FOUR DIGITS) SAP No.(FIVE DIGITS) Place of manufucturing(code) 7. Applicable category This specification is applied to Power Integrated Module named 7MBR35SB140-01 . 8. Storage and transportation notes The module should be stored at a standard temperature of 5 to 35ec and humidity of 45 to 75% . Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when transporting. Please connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. 9. Definitions of switching time ; Y= 90% | 0 Pe C , VGE trr I YcE . Ter 2 Ic 1 La Veo 90% : 90% oy Te Lod 10% , YCE A Re WE OA Vor t tr (i) te oOo --_ , t toff S ey Fuji Electric Co.Ltd. g| MS6M 0556 Yo H04-004-03This material and the information herein is the property of Fuji Electnc Co.Ltd They shall be neither reproduced, copied Jent. or disclosed in any way whatsoever for the use of any third party.nor used for the manufacturing purposes without the express written consent of Fuji Electric Co, Lid. { Inverter J Collector airrent vs. Collector-fimitter vol tage Tj= BC (typ) Collector current vs. [ Inverter ] Collector-Emi tter vol tage a0 . . . 80 TE 125C (typ. ) . : WGE= 20) 15 -12 VGE= 20 i5y 12v a | / / @ / y, : : i = / : z do z 40 7 o ao E E V a = L 4 8 f 4 fo 5 2 o 2 8 = 2 = & 8 ; a | ) BV 0 i i 0 A i O 1 2 3 d 5 0 1 2 3 4 5 Collec tor - Emitter vo ltage WOE [ ]J Collec tor ~ Emitter voltage ve [VJ { Inverter J [ Inverter } Collector current vs. Collector-fmitter vol tage Collector-Fmitter voltage vs. CateEmitter vol tage VCE=IN (typ) Tj= 2 (typ. ) 80 ' + ee F 10 nt | . L : 4 1s 25 Tj= 128C ! I 1 t. i d a I . u 4 oo | 4 > 8 I a & L 4 < = e | | L : 4 6 oo | 4 40 3 a 4 = L 4 o g 5 & r 1 : ; ] : NN 5 =e | 1 z . L P| 1c= 704 4 = 2 L L = 5 eee fe= 35A Ss 3 2 = 5 Te= 17.54 4 L 4 8 L d 0 1 0 Jt A pt a 0 ] 2 3 4 5 5 10 15 20 2 Collec tor - Emitter voltage we fv] Gate - Emitter voltage WOE [ ] [ Inverter ] { Inverter ] Capacitance vs Collector-Emitter voltage (typ ) Dymamic Gate charge . (typ ) VOEOY, f= Miz, Tj= BC Vec=80W, Ic=35A, Tj= 25C 100) 1000 r T 7 r 25 Poo. : q ~ L i ee ae 4 = 800 20 7 s Cies ao > NI 8 r 4 aay z > 1 8 / > 600 15 oe 8 we Ne 2 o 1000 = J oe r : z 4 > = c fr po Coes J be g L . . . 4 2 400 10 L : J < 3 oo e gy ay) 6 3 & bo] po Cres | a & a a 38 L 4 100 0 1 4 A ri 0 0 5 10 15 20 25 30 35 0 100 200 300 400 Collec tor ~ Emitter voltage von [ ]} Cate charge : Qg [nC] | 7, |e aa e - Fuji Electric Co.Ltd. S| MS6M0556 17 Z| 10 H04004-03{ nsec ] tf ton, tr, toff, Switching time tf [nsec ] tr, toff, ton, Fuyi Elecinc Co.Lid, They shall be neither reproduced. copied Swite hing time tent, or disclosed in any way whatsoever for the use of any third party.nor used for the manufacturing purposes without This material and the information herein Is the property of the exprass written consent of Fuji Electric Co. Ltd. { Inverter } { Inverter ] [ m! /pal se J Switching time vs Collector current (typ.) Switching time vs Collector current (typ.) Vec=800V, WGEELAV, Rg= BOQ, Ti= BC Vec=8QY, VORSEIS, Rg= 330, TK IBC 1000 T T T 1000 T t 7 : . . . oo 4 L . . . L bed un 1 ye [ett | 500 toff ! 500) , : : a -] e l mT . noortt . | | - oe : : . : 4 g L wr bioee ieee : - 4 o & 100 ~ 100 C 1 eo. To Ped 1 L 4 L + tf 4 9 * . tf, 4 a L 4 = 4 n L 4 50 i . i 50 i 1 4 0 20 0 &w 0 20 40 60 Collector current : Ie [ A] Collectar current : Ic [ A] { Inverter J [ Inverter } Switching time vs Gate resistance (typ.) Switching loss vs Collector current (typ.) Voc=B00V, Ic=36A, VOR=+15, Tj= BT Vou=S00V, WOEFI1SV, REO 5000 + aor r : 1 1 Y } soe : o 4 | . ; Do . , gon (125%), J | 1 g 12 L 4 a = 10 1000 + - 1 b L . 4 w A 4 a 8 4 3 L : Coed, S Vm d. : : 5 L Foff (125C) 4 WA Bot (25%) 4 & Err (125C) 2 - 4 g Err (25 )4 ; ; | 10 50 100 500 60 Gate resistance : Rg [ Q] Collector current : Ie CA] { Inverter ] { Inverter J Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area Veo=B00V, Le8M, VGEFHIBY, TF 1BC +VGEFISV, -VGESI5V, Rg233Q, TjJS1BC 25 T x T 1-r T T 100 | Eon }. 4 | 4 20 - : : 80 L | = | 15 ! = 60 Eon, Eof f, Err Collec tor current 40 . Eoff Bs aT 20 0 i i 1 i . ii i 1 0 10 50 100 500 0 200 400 600 800 1000 1200 1400 1600 Gate resistance : Rg [{ Q] Collector - Emitter voltage : VCE [ V] = 8 4 Fuji Electric Co.,Ltd. g, MS6M 0556 "A0 Qo H04-004-03This material and the information herein is the property of Fuji Electac Co.Ltd. They shall be neither reproduced. copied. lent, or disclosed in any way whatsoever for the use of any third party.nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.. Ltd. { Inverter } { Inverter } Forward current ys. Forward on voltage (typ.) Reverse recovery characteristics (typ.) 80 ; . 0 Vec=B00V, VGEHISY, REQ T T T . T T T T tT I mo D Tynes Tys25%C ! 60 : / = 3 rds) : : : < \ c . : S EM 100 f 4 - Pr trr(2s) : - cho : e L 7 40 . = 4 5 t zg b : : be no : 4 E oe : : = L ne Ce bee ee pd oF 4 Re | a : z : $$ L - eb oe od : 8 8 wtinstey [OY : | : 20 Moe : . : rc & oo an : : 2 2 Po a ace Cp deepen od $3 Irr(28C) : : L ] >> : : : coma : 0 i i 10 1 1 i a i i 0 ! 2 3 4d 0 10 20 30 40 50 60 Forward on voltage : Wo[V j Forward current : IF [A J { Converter ] Forward current vs. Forward onvoltage (typ.) 80 Y 7 r | Tj= 128C 0/-- < te L 4 40 4 2 c os 5 z z & 20 0 4 0.0 0.4 0. 8 1.2 16 2.0 Forward on voltage : VFM [EV ] { Thermistor } Transient therm resi stance Temperature characteristic (typ.) 5 oreo ert 4 200 : a q r t L 4 wok 4 x , L i 1 : : : FO [Inverter] 24 rE 4 |r 3 r TRT [Brake] 4 a 2 r 1 ~ 10 = r ier Unverter] 1 ou F 3 gs 4 2 L 5 1 a 4 a g 3 'E Ne sobs 001 hii fe po 01 0.001 O01 oO 1 1 -60 ~-40 -20 0 20 46 60 80 100 120 140 160 180 Pulse width : Pw [ see ] Temperawre [ T ] Ss. a ae s =) 9 Fuji Electric Co.,Ltd. S MS6M 0556 = 10 | H04-004-03Fuji Electne Co.Ltd They shatl be neither reproduced. copied lent, or disclosed in any way whatsoever for the use of any third party,nor used for the manufacturing purposes without This material and the information herein is the property of the express written consent of Fuji Electric Co., Ltd. [ Brake ] [ Brake } Collector current vs. Col lector-imitter vol tage Collector current vs. Collector-Emitter vol tage Tj= BC (ty) TF IBC (typ) 60 . : : , 60 : . ; } 4 L : 4 : VGB= 2OV 15V 12V : : spe 90) Ly ay 50 50 : : WOE= 20 15V_12 < | 1 = 40 40 2 2 = 90 : | 10 2 30 a o Et | E | u ua 5 20 ~ 20 g S 10 f. 10 | L i 4 q 4 | av! Q i 1 1 | 1 0 | i i i 1 0 1 2 3 4 5 0 1 2 3 4 5 Collector - Emitter voltage : VE [Vv] Collec tor - Emitter voltage : WCE [ V] [ Brake ] { Brake ] Collector current vs. Collector-Emitter vol tage Collector-Emitter voltage vs. Gate-Emitter vol tage VGE=I5V (typ ) Tj= BC (typ) 60 . : VO et T 1 . : 50 : Tis 25C Tj= 125 a [ | J } > _ 8 40 = | | | a t . gs + 4 4 2 30 S " 4 > - f z [ 8 4 5 20 e oT NN 1 8 : . t [---___} Ie= 50a 4 3 | , ) 1 5 > r | S| Ic# 254 ? ST 10 = tL i To= 12.54 s 8 r 4 0 ae" 4. i 1 i i. 0 Pete to a bo ye 0 1 2 3 4 5 5 10 15 20 2 Collector - fmitter voltage : WE [ V) Gate - Emitter voltage : WE [Vv] [ Brake } { Brake ] Capacitance vs Collector-Emitter voltage (typ) Dynamic Gate charge (typ. ) YOE=OV, fF IMIz, Tj= BC Vec# 80, Ics25A, Tj= 25C 10. 000 - - 1000 25 _ L Ls 4 > 7 eee 4 800 20> a wv > na L | i 1 #3 ~ Cles S L 4 a g g - 00 15 wo a g ee g 1.000 a f | # - 7 c 2 & t : aa 4 - ~ t . : ] S400 10 L oN a Coes = & , 4 & a g } 1 5 g 8 200 5 S lh | 8 L 1 J Cres 100 0 0 0 5 Ww 15 20 25 30 35 0 50 100 150 200 250 Collector - Emitter valiage : VOR [ VJ] Gate charge : Qg [nC] 2 107 ae e = Fuji Electric Co.Ltd. &| MS6M 0556 a 7 = 10 H04-004-03