MMBD301M3 Silicon Hot-Carrier Diode SCHOTTKY Barrier Diode The MMBD301M3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed primarily for high-efficiency UHF and VHF detector applications. It is readily adaptable to many other fast switching RF and digital applications and is housed in the SOT-723 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. Features * * * * Extremely Low Minority Carrier Lifetime - 15 ps (Typ) Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V Reduces Board Space These Devices are Pb-Free and Halogen Free/BFR Free www.onsemi.com 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES 3 CATHODE 1 ANODE MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit VR 30 V Forward Current (DC) IF 200 (Max) mA Total Device Dissipation @ TA = 25C Derate above 25C PF 200 2.0 mW mW/C Operating Junction Temperature Range TJ -55 to +125 C Tstg -55 to +150 C Reverse Voltage Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. SOT-723 CASE 631AA STYLE 2 AK M = Specific Device Code = Date Code ORDERING INFORMATION Device Characteristic Shipping Package MMBD301M3T5G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) AK M SOT-723 8000/Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Symbol Min Typ Max Unit V(BR)R 30 - - V Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 CT - 0.9 1.5 pF Reverse Leakage (VR = 25 V) Figure 3 IR - 13 200 nAdc Forward Voltage (IF = 1.0 mAdc) Figure 4 VF - 0.38 0.45 Vdc Forward Voltage (IF = 10 mAdc) Figure 4 VF - 0.52 0.6 Vdc Reverse Breakdown Voltage (IR = 10 mA) (c) Semiconductor Components Industries, LLC, 2013 March, 2018 - Rev. 2 1 Publication Order Number: MMBD301M3/D MMBD301M3 TYPICAL ELECTRICAL CHARACTERISTICS 2.8 500 t , MINORITY CARRIER LIFETIME (ps) C T, TOTAL CAPACITANCE (pF) f = 1.0 MHz 2.4 2.0 1.6 1.2 0.8 0.4 400 KRAKAUER METHOD 300 200 100 0 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 0 Figure 1. Total Capacitance 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 100 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 20 Figure 2. Minority Carrier Lifetime 10 TA = 100C 1.0 75C 0.1 25C 0.01 0.001 10 10 TA = -40C TA = 85C 1.0 TA = 25C 0.1 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 0.2 Figure 3. Reverse Leakage IF(PEAK) 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 Figure 4. Forward Voltage CAPACITIVE CONDUCTION IR(PEAK) FORWARD CONDUCTION SINUSOIDAL GENERATOR BALLAST NETWORK (PADS) STORAGE CONDUCTION PADS DUT Figure 5. Krakauer Method of Measuring Lifetime www.onsemi.com 2 SAMPLING OSCILLOSCOPE (50 W INPUT) 1.2 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT-723 CASE 631AA-01 ISSUE D DATE 10 AUG 2009 SCALE 4:1 -X- D b1 A -Y- 3 E 1 2X HE 2 2X e b C 0.08 X Y 3X 1 3X DIM A b b1 C D E e HE L L2 SIDE VIEW TOP VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. L GENERIC MARKING DIAGRAM* L2 BOTTOM VIEW STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE RECOMMENDED SOLDERING FOOTPRINT* 2X 0.40 2X MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 0.27 STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN XX M 1 XX M = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G", may or not be present. PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: 98AON12989D Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed STATUS: ON SEMICONDUCTOR STANDARD versions are uncontrolled except when stamped "CONTROLLED COPY" in red. NEW STANDARD: (c) Semiconductor Components Industries, LLC, 2002 Case Outline Number: http://onsemi.com SOT-723 DESCRIPTION: October, 2002 - Rev. 0 PAGE 1 OFXXX 2 1 DOCUMENT NUMBER: 98AON12989D PAGE 2 OF 2 ISSUE REVISION DATE O RELEASED FOR PRODUCTION. REQ. BY D. TRUHITTE. 07 AUG 2003 A CHANGED DIMS A, b, b1, C, AND D. REQ. BY D. TRUHITTE. 11 NOV 2003 B CHANGED DIMS b AND b1. REQ. BY D. TRUHITTE. 15 MAR 2004 C ADDED STYLE 5. REQ. BY S. WINSTON. 01 AUG 2006 D ADDED BOTTOM VIEW. CHANGED DIMENSION L TO L2. ADDED NEW L DIMENSION. UPDATED SOLDER FOOTPRINT. REQ. BY D. TRUHITTE. 10 AUG 2009 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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