MMBD301M3T5G - ON SEMICONDUCTOR - Datasheet.Directory

March, 2018 − Rev. 2

1Publication Order Number:

MMBD301M3/D

MMBD301M3

Silicon Hot-Carrier Diode

SCHOTTKY Barrier Diode

The MMBD301M3T5G device is a spin−off of our popular

SOT−23 three−leaded device. It is designed primarily for

high−efficiency UHF and VHF detector applications. It is readily

adaptable to many other fast switching RF and digital applications

and is housed in the SOT−723 surface mount package. This device is

ideal for low−power surface mount applications where board space is

at a premium.

Features

•Extremely Low Minority Carrier Lifetime − 15 ps (Typ)

•Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V

•Reduces Board Space

•These Devices are Pb−Free and Halogen Free/BFR Free

MAXIMUM RATINGS

Rating Symbol Value Unit

Reverse Voltage VR30 V

Forward Current (DC) IF200 (Max) mA

Total Device Dissipation

@ TA = 25°C

Derate above 25°C

200

2.0

mW/°C

Operating Junction Temperature Range TJ−55 to +125 °C

Storage Temperature Range Tstg −55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Reverse Breakdown Voltage (IR = 10 mA) V(BR)R 30 − − V

Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 CT−0.9 1.5 pF

Reverse Leakage (VR = 25 V) Figure 3 IR−13 200 nAdc

Forward Voltage (IF = 1.0 mAdc) Figure 4 VF−0.38 0.45 Vdc

Forward Voltage (IF = 10 mAdc) Figure 4 VF−0.52 0.6 Vdc

www.onsemi.com

30 VOLTS

SILICON HOT−CARRIER

DETECTOR AND SWITCHING

DIODES

Device Package Shipping†

ORDERING INFORMATION

MMBD301M3T5G SOT−723

(Pb−Free)

8000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SOT−723

CASE 631AA

STYLE 2

AK M

AK = Specific Device Code

M = Date Code

MARKING

DIAGRAM

ANODE

CATHODE

MMBD301M3

www.onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. Total Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Minority Carrier Lifetime

IF, FORWARD CURRENT (mA)

Figure 3. Reverse Leakage

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Forward Voltage

VF, FORWARD VOLTAGE (VOLTS)

, FORWARD CURRENT (mA)IF

, REVERSE LEAKAGE ( A)IRm

0.2 0.4 0.6 0.8 1.0 1.2

100

0 6.0 12 18 24

1.0

0.1

0.01

0.001

01020

500

0 3.0 6.0 9.0 12 15 21

1.6

3024 2718

1.2

0.8

0.4

f = 1.0 MHz

TA = -40°C

TA = 85°C

TA = 25°C

1.0

0.1

30 40 50 60 70 80 10090

KRAKAUER METHOD

2.8

2.4

2.0

TA = 100°C

75°C

25°C

, TOTAL CAPACITANCE (pF)CT

, MINORITY CARRIER LIFETIME (ps)t

400

300

200

100

SINUSOIDAL

GENERATOR

BALLAST

NETWORK

(PADS)

SAMPLING

OSCILLOSCOPE

(50 W INPUT)

PADS

CAPACITIVE

CONDUCTION

FORWARD

CONDUCTION

STORAGE

CONDUCTION

DUT

IF(PEAK)

IR(PEAK)

Figure 5. Krakauer Method of Measuring Lifetime

SOT−723

CASE 631AA−01

ISSUE D

DATE 10 AUG 2009

DIM MIN NOM MAX

MILLIMETERS

A0.45 0.50 0.55

b0.15 0.21 0.27

b1 0.25 0.31 0.37

C0.07 0.12 0.17

D1.15 1.20 1.25

E0.75 0.80 0.85

e0.40 BSC

H1.15 1.20 1.25

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS OR GATE BURRS.

−Y−

−X−

X0.08 Y

XX = Specific Device Code

M = Date Code

GENERIC

MARKING DIAGRAM*

SCALE 4:1

XX M

STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

STYLE 2:

PIN 1. ANODE

2. N/C

3. CATHODE

STYLE 3:

PIN 1. ANODE

2. ANODE

3. CATHODE

STYLE 4:

PIN 1. CATHODE

2. CATHODE

3. ANODE 1

*This information is generic. Please refer

to device data sheet for actual part

marking. Pb−Free indicator, “G”, may

or not be present.

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

STYLE 5:

PIN 1. GATE

2. SOURCE

3. DRAIN

L2 0.15 0.20 0.25

0.29 REF

TOP VIEW

BOTTOM VIEW

SIDE VIEW

RECOMMENDED

DIMENSIONS: MILLIMETERS

0.40

1.50

PACKAGE

OUTLINE

0.272X

0.523X 0.36

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

http://onsemi.com

October, 2002 − Rev. 0

Case Outline Number:

XXX

DOCUMENT NUMBER:

STATUS:

NEW STANDARD:

DESCRIPTION:

98AON12989D

ON SEMICONDUCTOR STANDARD

SOT−723

Electronic versions are uncontrolled except when

accessed directly from the Document Repository. Printed

versions are uncontrolled except when stamped

“CONTROLLED COPY” in red.

PAGE 1 OF 2

DOCUMENT NUMBER:

98AON12989D

PAGE 2 OF 2

ISSUE REVISION DATE

ORELEASED FOR PRODUCTION. REQ. BY D. TRUHITTE. 07 AUG 2003

ACHANGED DIMS A, b, b1, C, AND D. REQ. BY D. TRUHITTE. 11 NOV 2003

BCHANGED DIMS b AND b1. REQ. BY D. TRUHITTE. 15 MAR 2004

CADDED STYLE 5. REQ. BY S. WINSTON. 01 AUG 2006

DADDED BOTTOM VIEW. CHANGED DIMENSION L TO L2. ADDED NEW L DIMEN-

SION. UPDATED SOLDER FOOTPRINT. REQ. BY D. TRUHITTE.

10 AUG 2009

August, 2009 − Rev. 01D

Case Outline Number:

631AA

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