Order this document by MPQ2906/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon 14 13 12 11 10 9 8 5 6 7 PNP 1 2 3 4 *Motorola Preferred Device MAXIMUM RATINGS Symbol MPQ2906 MPQ2907 MPQ2907A Unit Collector - Emitter Voltage VCEO -40 -60 Vdc Collector - Base Voltage VCBO -60 Vdc Emitter - Base Voltage VEBO -5.0 Vdc IC -600 mAdc Rating Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Each Transistor Total Device 0.65 6.5 1.9 19 PD TJ, Tstg 14 1 CASE 646-06, STYLE 1 TO-116 Watts mW/C C -55 to +125 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Symbol Max Unit RqJA 66 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max -40 -60 -- -- Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(1) (IC = -10 mAdc, IB = 0) V(BR)CEO MPQ2906, MPQ2907 MPQ2907A Vdc Collector - Base Breakdown Voltage (IC = -10 mAdc, IE = 0) V(BR)CBO -60 -- Vdc Emitter - Base Breakdown Voltage (IE = -10 mAdc, IC = 0) V(BR)EBO -5.0 -- Vdc ICBO -- -50 nAdc IEBO -- -50 nAdc Collector Cutoff Current (VCB = -30 Vdc, IE = 0) (VCB = -50 Vdc, IE = 0) MPQ2906, MPQ2907 MPQ2907A Emitter Cutoff Current (VEB = -3.0 Vdc, IE = 0) MPQ2906,7 Only 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. REV 3 Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Max 75 100 35 75 100 100 40 100 20 30 50 -- -- -- -- -- 300 -- -- -- -- -- -- -- -- -0.4 -1.6 -1.6 -- -- -- -1.3 -2.6 -2.6 fT 200 -- MHz Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Cobo -- 8.0 pF Input Capacitance (VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo -- 30 pF ton -- 45 ns toff -- 180 ns Characteristic Unit ON CHARACTERISTICS DC Current Gain(1) (IC = -100 mAdc, VCE = -10 Vdc) (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) hFE -- MPQ2907A MPQ2907A MPQ2906 MPQ2907 MPQ2907A MPQ2907A MPQ2906 MPQ2907 MPQ2906 MPQ2907 MPQ2907A (IC = -10 mAdc, VCE = -10 Vdc) (IC = -150 mAdc, VCE = -10 Vdc) (IC = -150 mAdc, VCE = -10 Vdc) (IC = -300 mAdc, VCE = -10 Vdc) (IC = -500 mAdc, VCE = -10 Vdc) Collector - Emitter Saturation Voltage(1) (IC = -150 mAdc, IB = -15 mAdc) (IC = -300 mAdc, IB = -30 mAdc) (IC = -500 mA, IB = -500 mA) Base - Emitter Saturation Voltage(1) (IC = -150 mAdc, IB = -15 mAdc) (IC = -300 mAdc, IB = -30 mAdc) (IC = -500 mA, IB = -50 mA) VCE(sat) Vdc MPQ2906, MPQ2907 MPQ2907A VBE(sat) Vdc MPQ2906, MPQ2907 MPQ2906, MPQ2907 MPQ2907A SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Turn-On Time (VCC = -30 Vdc, IC = -150 mAdc, IB1 = 15 mAdc) Turn-Off Time (VCC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = 15 mAdc) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. MPQ2907A Only MPQ2907A Only -30 INPUT Zo = 50 W PRF = 150 PPS RISE TIME 2.0 ns 200 1.0 k 0 -16 V +15 V TO OSCILLOSCOPE RISE TIME 5.0 ns 50 200 ns Figure 1. Delay and Rise Time Test Circuit 2 INPUT Zo = 50 W PRF = 150 PPS RISE TIME 2.0 ms 1.0 k 50 37 TO OSCILLOSCOPE RISE TIME 5.0 ns 1.0 k 0 -30 V -6.0 1N916 200 ns Figure 2. Storage and Fall Time Test Circuit Motorola Small-Signal Transistors, FETs and Diodes Device Data h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +175C +25C 1.0 0.7 0.5 -55C VCE = 10 V VCE = 1.0 V 0.3 0.2 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 30 20 70 50 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain 2.0 +2.0 TJ = 25C qVC FOR VCE(sat) +1.0 COEFFICIENT (mV/ C) "ON" VOLTAGE (VOLTS) 1.6 VBE(sat) @ IC/IB = 10 1.2 0.8 VBE @ VCE = 1.0 V -55C TO +25C 0 +25C TO +175C qVB FOR VBE -1.0 +25C TO +175C -2.0 0.4 VCE(sat) @ IC/IB = 10 0 0.5 -55C TO +25C -3.0 1.0 5.0 2.0 10 20 100 50 200 0.5 500 1.0 5.0 2.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 4. "ON" Voltages Figure 5. Temperature Coefficients 500 NOISE FIGURE (VCE = 10 V, TA = 25C) 6.0 4.0 IC = 10 mA RS = 4.7 kW 3.0 IC = 1.0 mA RS = 0.7 kW 2.0 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 mA 6.0 4.0 2.0 IC = 100 mA RS = 1.2 kW 1.0 f = 1.0 kHz IC = 10 mA 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.0 10 VCE = 10 Vdc TA = 25C 1.0 mA VCE = 10 Vdc TA = 25C 0 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 6. Frequency Effects Figure 7. Source Resistance Effects Motorola Small-Signal Transistors, FETs and Diodes Device Data 50 100 3 30 600 400 VCE = 20 Vdc f = 100 MHz TJ = 25C 200 100 60 7.0 3.0 0.5 0.7 1.0 2.0 3.0 5.0 10 20 30 50 0.2 2.0 3.0 5.0 7.0 Figure 8. Current-Gain -- Bandwidth Product Figure 9. Capacitance 10 20 5000 VCC = 30 V, VBE(off) = 2.0 V VCC = 10 V, VBE(off) = 0 V 3000 VCC = 30 V TJ = 25C 2000 tr Q, CHARGE (pC) IC/IB = 10 TJ = 25C 70 50 td QT, TOTAL CONTROL CHARGE 1000 700 500 30 300 20 200 10 5.0 7.0 10 20 30 50 70 100 200 300 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 10. Turn-On Time Figure 11. Charge Data 300 300 ts - ts - 1/8 tf 100 IB1 = IB2 TJ = 25C 70 IC/IB = 10 30 500 VCC = 30 V IB1 = IB2 TJ = 25C 200 t f , FALL TIME (ns) 200 IC/IB = 20 100 70 IC/IB = 10 50 30 20 IC/IB = 20 10 10 IC, COLLECTOR CURRENT (mA) 500 10 5.0 7.0 QA, ACTIVE REGION CHARGE 100 5.0 7.0 500 500 20 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS) 100 50 0.3 IC, COLLECTOR CURRENT (mA) 200 t, TIME (ns) Cob 10 5.0 300 t s , STORAGE TIME (ns) Cib 80 500 4 TJ = 25C f = 100 kHz 20 C, CAPACITANCE (pF) f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 20 30 50 70 100 200 300 500 10 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 12. Storage Time Figure 13. Fall Time 200 300 500 Motorola Small-Signal Transistors, FETs and Diodes Device Data u -30 V P.W. 200 ns tr 2.0 ns DUTY CYCLE 2.0% -30 V P.W. 1.0 ms tr 2.0 ns DUTY CYCLE 2.0% 200 200 +13.8 V 1.0 k 0 SCOPE SCOPE 1.0 k 0 -16 V -16.2 V 1N916 -3.0 V Figure 14. Delay and Rise Time Test Circuit Motorola Small-Signal Transistors, FETs and Diodes Device Data Figure 15. Storage and Fall Time Test Circuit 5 PACKAGE DIMENSIONS 14 8 1 7 NOTES: 1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE POSITION AT SEATING PLANE AT MAXIMUM MATERIAL CONDITION. 2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 3. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 4. ROUNDED CORNERS OPTIONAL. B A F STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. L C J N H G D SEATING PLANE K M COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR COLLECTOR BASE EMITTER NO CONNECTION EMITTER BASE COLLECTOR DIM A B C D F G H J K L M N INCHES MIN MAX 0.715 0.770 0.240 0.260 0.145 0.185 0.015 0.021 0.040 0.070 0.100 BSC 0.052 0.095 0.008 0.015 0.115 0.135 0.300 BSC 0_ 10_ 0.015 0.039 MILLIMETERS MIN MAX 18.16 19.56 6.10 6.60 3.69 4.69 0.38 0.53 1.02 1.78 2.54 BSC 1.32 2.41 0.20 0.38 2.92 3.43 7.62 BSC 0_ 10_ 0.39 1.01 CASE 646-06 TO-116 ISSUE M Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. 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