1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol MPQ2906
MPQ2907 MPQ2907A Unit
Collector–Emitter Voltage VCEO –40 –60 Vdc
Collector–Base Voltage VCBO –60 Vdc
Emitter–Base Voltage VEBO –5.0 Vdc
Collector Current — Continuous IC–600 mAdc
Each
Transistor Total
Device
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD0.65
6.5 1.9
19 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +125 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 66 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = –10 mAdc, IB = 0) MPQ2906, MPQ2907
MPQ2907A
V(BR)CEO –40
–60 —
—
Vdc
Collector–Base Breakdown Voltage
(IC = –10
m
Adc, IE = 0) V(BR)CBO –60 — Vdc
Emitter–Base Breakdown Voltage
(IE = –10
m
Adc, IC = 0) V(BR)EBO –5.0 — Vdc
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0) MPQ2906, MPQ2907
(VCB = –50 Vdc, IE = 0) MPQ2907A
ICBO — –50 nAdc
Emitter Cutoff Current
(VEB = –3.0 Vdc, IE = 0) MPQ2906,7 Only IEBO —–50 nAdc
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPQ2906/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
CASE 646–06, STYLE 1
TO–116
1
14
Motorola, Inc. 1997
1234567
14 13 12 11 10 9 8
PNP
REV 3
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = –100
m
Adc, VCE = –10 Vdc) MPQ2907A
(IC = –1.0 mAdc, VCE = –10 Vdc) MPQ2907A
(IC = –10 mAdc, VCE = –10 Vdc) MPQ2906
MPQ2907
(IC = –10 mAdc, VCE = –10 Vdc) MPQ2907A
(IC = –150 mAdc, VCE = –10 Vdc) MPQ2907A
(IC = –150 mAdc, VCE = –10 Vdc) MPQ2906
MPQ2907
(IC = –300 mAdc, VCE = –10 Vdc) MPQ2906
MPQ2907
(IC = –500 mAdc, VCE = –10 Vdc) MPQ2907A
hFE 75
100
35
75
100
100
40
100
20
30
50
—
—
—
—
—
300
—
—
—
—
—
—
Collector–Emitter Saturation V oltage (1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –300 mAdc, IB = –30 mAdc) MPQ2906, MPQ2907
(IC = –500 mA, IB = –500 mA) MPQ2907A
VCE(sat) —
—
—
–0.4
–1.6
–1.6
Vdc
Base–Emitter Saturation V oltage (1)
(IC = –150 mAdc, IB = –15 mAdc) MPQ2906, MPQ2907
(IC = –300 mAdc, IB = –30 mAdc) MPQ2906, MPQ2907
(IC = –500 mA, IB = –50 mA) MPQ2907A
VBE(sat) —
—
—
–1.3
–2.6
–2.6
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) fT200 — MHz
Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cobo —8.0 pF
Input Capacitance (VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo —30 pF
SWITCHING CHARACTERISTICS
Turn–On Time
(VCC = –30 Vdc, IC = –150 mAdc, IB1 = 15 mAdc) MPQ2907A Only ton —45 ns
Turn–Off Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = 15 mAdc) MPQ2907A Only
toff —180 ns
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
Figure 1. Delay and Rise Time
Test Circuit
–30
200
1.0 k
0
–16 V
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
INPUT
Zo = 50
W
PRF = 150 PPS
RISE TIME
≤
2.0 ns
Figure 2. Storage and Fall Time
Test Circuit
50
200 ns
–6.0
37
1.0 k
0
–30 V
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
INPUT
Zo = 50
W
PRF = 150 PPS
RISE TIME
≤
2.0
m
s
50
200 ns
1N916
+15 V
1.0 k
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 3. DC Current Gain
Figure 4. “ON” Voltages Figure 5. Temperature Coefficients
Figure 6. Frequency Effects Figure 7. Source Resistance Effects
1.0 2.00.5
IC, COLLECTOR CURRENT (mA)
1.0
0.5
0.3
0.2
1.0 1000.5
IC, COLLECTOR CURRENT (mA)
2.0
1.6
1.2
0.8
0.4
0
IC, COLLECTOR CURRENT (mA)
–3.0
20
0.5 2.00.1
f, FREQUENCY (kHz)
5.0
4.0
3.0
2.0
1.0
0
RS, SOURCE RESISTANCE (k OHMS)
10
6.0
4.0
2.0
0
1.0
f = 1.0 kHz
hFE, DC CURRENT GAIN (NORMALIZED)“ON” VOLT AGE (VOLTS)
NF, NOISE FIGURE (dB)
105.0 20
10 207.0 100 20050 500
2.0
2.0 5.0 10 50 200
+2.0
+1.0
0
–1.0
–2.0
q
VC FOR VCE(sat)
+25
°
C
NF, NOISE FIGURE (dB)
30 70 300
5.03.00.7
0.7
TJ = +175
°
C
–55
°
C
500
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
1.0 1000.5 202.0 5.0 10 50 200 500
COEFFICIENT (mV/ C)
°
0.2 50 100
6.0
8.0 IC = 10
m
A
0.5 2.00.1 1.0 105.0 200.2 50 100
IC = 10
m
A
RS = 4.7 k
W
IC = 100
m
A
RS = 1.2 k
W
100
m
A
1.0 mA
q
VB FOR VBE
+25
°
C TO +175
°
C
–55
°
C TO +25
°
C
VCE = 10 V
VCE = 1.0 V
NOISE FIGURE
(VCE = 10 V, TA = 25°C)
VCE = 10 Vdc
TA = 25
°
C
VCE = 10 Vdc
TA = 25
°
C
IC = 1.0 mA
RS = 0.7 k
W
–55
°
C TO +25
°
C
+25
°
C TO +175
°
C
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 8. Current–Gain — Bandwidth Product Figure 9. Capacitance
Figure 10. Turn–On Time Figure 11. Charge Data
Figure 12. Storage Time Figure 13. Fall Time
1.0
IC, COLLECTOR CURRENT (mA)
600
100
60
VR, REVERSE VOLTAGE (VOL TS)
3.0 20
7.0
5.0
3.0
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
fT, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
t, TIME (ns)
Q, CHARGE (pC)
102.0 5.0 20 30 5.0 100.2 0.5 1.0 2.0
10
20
30
TJ = 25
°
C
f = 100 kHz
, STORAGE TIME (ns)
400
200
80
0.5
VCE = 20 Vdc
f = 100 MHz
TJ = 25
°
C
0.3
Cib
Cob
IC/IB = 10
TJ = 25
°
C
tr
ts
20 10010
300
200
100
50
20
10 50
, FALL TIME (ns)tf
200 300
30
70
30 70
IC/IB = 10
IC/IB = 20
IC/IB = 10
IC/IB = 20
3.0
5007.05.0
VCC = 30 V
IB1 = IB2
TJ = 25
°
C
500
20 10010
300
200
100
50
20
10 50 200 300
30
70
30 70 5007.05.0
500
IB1 = IB2
TJ = 25
°
C
t
′
s – ts – 1/8 tf
td
20 10010
3000
2000
1000
500
200
100 50 200 300
300
700
30 70 5007.05.0
VCC = 30 V
TJ = 25
°
C
5000
QT, TOTAL CONTROL CHARGE
QA, ACTIVE REGION CHARGE
20 10010
300
200
100
50
20
10 50 200 300
30
70
30 70 5007.05.0
500 VCC = 30 V, VBE(off) = 2.0 V
VCC = 10 V, VBE(off) = 0 V
0.7 50 0.7 7.0
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 14. Delay and Rise Time
Test Circuit Figure 15. Storage and Fall Time
Test Circuit
–30 V
200
1.0 k
0
–16 V
–30 V
200
1.0 k
0
–16.2 V 1N916
SCOPE
P.W.
≈
1.0
m
s
tr
≤
2.0 ns
DUTY CYCLE
≤
2.0%
P.W.
u
200 ns
tr
≤
2.0 ns
DUTY CYCLE
≤
2.0%
SCOPE
–3.0 V
+13.8 V
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
CASE 646–06
TO–116
ISSUE M
17
14 8
B
A
F
HG D K
C
N
L
J
M
SEATING
PLANE
STYLE 1:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
4. NO CONNECTION
5. EMITTER
6. BASE
7. COLLECTOR
8. COLLECTOR
9. BASE
10. EMITTER
11. NO CONNECTION
12. EMITTER
13. BASE
14. COLLECTOR
NOTES:
1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE
POSITION AT SEATING PLANE AT MAXIMUM
MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
3. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
4. ROUNDED CORNERS OPTIONAL.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.715 0.770 18.16 19.56
B0.240 0.260 6.10 6.60
C0.145 0.185 3.69 4.69
D0.015 0.021 0.38 0.53
F0.040 0.070 1.02 1.78
G0.100 BSC 2.54 BSC
H0.052 0.095 1.32 2.41
J0.008 0.015 0.20 0.38
K0.115 0.135 2.92 3.43
L0.300 BSC 7.62 BSC
M0 10 0 10
N0.015 0.039 0.39 1.01
____
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
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Opportunity/Af firmative Action Employer.
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MPQ2906/D
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