2SA1415 / 2SC3645 Ordering number : EN1720B SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1415 / 2SC3645 High-Voltage Switching, Predriver Applications Features * * * * * Adoption of FBET process. High breakdown voltage (VCEO=160V). Excellent linearity of hFE and small Cob. Fast switching speed. Ultrasmall size marking it easy to provide high-density,small-sized hybrid ICs. Specifications ( ) : 2SA1415 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)180 V Collector-to-Emitter Voltage VCEO (--)160 V Emitter-to-Base Voltage VEBO (--)5 Collector Current Collector Current (Pulse) V IC (--)140 ICP (--)200 mA 500 mW Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Moutned on ceramic board (250mm20.8mm) mA 1.3 W 150 C --55 to +150 C Marking : 2SA1415 : AA, 2SC3645: CA Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 80608CB TI IM TA-4017, 4212 / O3103TN (KT)/71598HA (KT)/3277KI/2145MW, TS No.1720-1/5 2SA1415 / 2SC3645 Electrical Characteristics at Ta=25C Parameter Symbol Ratings Conditions min typ Unit max Collector Cutoff Current ICBO VCB=(--)80V, IE=0A (--)100 nA Emitter Cutoff Current IEBO hFE VEB=(--)4V, IC=0A (--)100 nA fT Cob VCE=(--)10V, IC=(--)10mA VCB=(--)10V, f=1MHz VCE(sat) IC=(--)50mA, IB=(--)5mA See sepcified Test Circuit. DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Turn-ON Time VCE=(--)5V, IC=(--)10mA ton tstg Strage Time Fall Time tf 140* 400* 150 MHz (4.0)3.0 (--0.14)0.07 pF (--0.4)0.3 V 0.1 s See sepcified Test Circuit. 1.5 s See sepcified Test Circuit. 0.1 s * : The 2SA1415/2SC3645 are classified by 10mA hFE as follows : Rank S T hFE 140 to 280 200 to 400 Package Dimensions Switching Time Test Circuit unit : mm (typ) 7007A-004 IB1 Top View 3k 4.5 IB2 OUT IN 1.6 1.5 2k 5k 2.5 4.0 1.0 50 + + 1F 1F 20V --2V 1 2 3 0.4 IC=10IB1=--10IB2=10mA 0.4 For PNP, the polarity is reversed. 0.5 1.5 3.0 0.75 1 : Base 2 : Collector 3 : Emitter SANYO : PCP Bottom View IC -- VCE --140 IC -- VCE 140 2SA1415 --0.5 mA .4mA --0 --100 A --0.3m --80 --0.2mA --60 --40 --0.1mA 2SC3645 A 0.4m 100 0.3mA 80 0.2mA 60 40 0.1mA 20 --20 0 0 0.6 mA 120 A 6m . --0 Collector Current, IC -- mA Collector Current, IC -- mA --120 0.5 mA IB=0mA --10 --20 --30 --40 --50 --60 Collector-to-Emitter Voltage, VCE -- V --70 ITR03510 0 IB=0mA 0 10 20 30 40 50 60 Collector-to-Emitter Voltage, VCE -- V 70 ITR03511 No.1720-2/5 2SA1415 / 2SC3645 IC -- VBE --140 IC -- VBE 140 2SC3645 2SA1415 120 Collector Current, IC -- mA Collector Current, IC -- mA --120 --100 --80 --60 --40 --20 --0.2 --0.4 --0.6 --0.8 Base-to-Emitter Voltage, VBE -- V 40 5 DC Current Gain, hFE 7 5 100 7 5 2 7 --100 100 7 5 3 2 --1.0 2 3 5 7 --10 2 3 5 Collector Current, IC -- mA 7 --100 2 10 7 5 3 2 1.0 --1.0 2 2 3 5 7 --10 2 3 5 7 --100 Collector-to-Base Voltage, VCB -- V ITR03518 7 2 10 3 5 7 100 2 ITR03515 100 7 5 3 2 2 3 5 7 2 10 3 5 Collector Current, IC -- mA 7 100 2 ITR03517 Cob -- VCB 100 3 5 f T -- IC 10 1.0 2 2SC3645 f=1MHz 7 Output Capacitance, Cob -- pF 5 3 2SC3645 VCE=10V ITR03516 2SA1415 f=1MHz 7 2 7 1.0 3 Cob -- VCB 100 5 Collector Current, IC -- mA Gain-Bandwidth Product, f T -- MHz 2SA1415 VCE=--10V 2 10 10 2 ITR03514 f T -- IC 3 2SC3645 VCE=5V 2 3 3 5 7 --10 2 3 5 Collector Current, IC -- mA 1.0 ITR03513 3 2 2 0.8 hFE -- IC 3 --1.0 0.6 5 100 7 0.4 Base-to-Emitter Voltage, VBE -- V 7 2 5 0.2 1000 3 10 0 ITR03512 2SA1415 VCE=--5V 7 DC Current Gain, hFE 60 0 --1.0 hFE -- IC 1000 Gain-Bandwidth Product, f T -- MHz 80 20 0 0 Output Capacitance, Cob -- pF 100 5 3 2 10 7 5 3 2 1.0 1.0 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V 7 100 ITR03519 No.1720-3/5 2SA1415 / 2SC3645 VCE(sat) -- IC --1.0 5 3 2 --0.1 7 5 5 3 2 0.1 7 5 3 3 5 7 2 --1.0 3 2 3 5 --10 Collector Current, IC -- mA 5 7 7 --100 2 2 2 --1.0 7 5 7 2 --1.0 3 5 7 2 3 5 --10 Collector Current, IC -- mA 7 --100 op era 3 tio n 2 10 7 5 Ta=25C Single pulse For PNP, minus sign is omitted. Mounted on ceramic board (250mm20.8mm) 3 2 1.0 1.0 2 3 5 7 2 10 3 5 7 100 2 ITR03521 1.0 7 5 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA Collector Dissipation, PC -- W Collector Current, IC -- mA DC s 1m 0m s 5 2 7 100 2 ITR03071 PC -- Ta 2SA1415 / 2SC3645 Mounted on ceramic board (250mm20.8mm) 1.4 10 3 3 1.6 IC=140mA 100 7 5 2 2SC3645 IC / IB=10 ITR03522 ICP=200mA 2 7 10 VCE(sat) -- IC 2SA1415 / 2SC3645 3 5 5 3 2 ASO 5 3 Collector Current, IC -- mA Base-to-Emitter Saturation Voltage, VCE(sat) -- V 3 5 2 7 5 3 7 1.0 10 2SA1415 IC / IB=10 7 5 ITR03520 VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VCE(sat) -- V 2SC3645 IC / IB=10 7 7 2 VCE(sat) -- IC 1.0 2SA1415 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 1.3 1.2 1.0 0.8 0.6 0.4 0.2 7 100 2 Collector-to-Emitter Voltage, VCE -- V 3 IT13954 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT13955 PC -- Ta 0.6 Collector Dissipation, PC -- W 2SA1415 / 2SC3645 0.5 0.4 No 0.3 he at sin k 0.2 0.1 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT13956 No.1720-4/5 2SA1415 / 2SC3645 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2008. Specifications and information herein are subject to change without notice. PS No.1720-5/5