2N6782LCC4 IRFE110 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL POWER MOSFET 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 VDSS ID(cont) RDS(on) 100V 3.5A 0.6 0.76 (0.030) 0.51 (0.020) FEATURES 7 6 5 1.39 (0.055) 1.15 (0.045) 4 0.33 (0.013) Rad. 0.08 (0.003) 3 1.65 (0.065) 1.40 (0.055) * SURFACE MOUNT 0.43 (0.017) 0.18 (0.007 Rad. * SMALL FOOTPRINT * HERMETICALLY SEALED * DYNAMIC dv/dt RATING LCC4 GATE DRAIN SOURCE * AVALANCHE ENERGY RATING Pins 4,5 Pins1,2,15,16,17,18 Pins 6,7,8,9,10,11,12,13 * SIMPLE DRIVE REQUIREMENTS * LIGHTWEIGHT ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS Gate - Source Voltage ID Continuous Drain Current (VGS = 10V , Tcase = 25C) 3.5A ID Continuous Drain Current (VGS = 10V , Tcase = 100C) 2.25A IDM Pulsed Drain Current 1 14A PD Power Dissipation @ Tcase = 25C 15W 20V Linear Derating Factor EAS Single Pulse Avalanche Energy 2 dv/dt Peak Diode Recovery 3 TJ , Tstg Operating and Storage Temperature Range Surface Temperature ( for 5 sec). 0.09W/C 7.0mJ 9.0V/ns -55 to +150C 300C Notes 1) Pulse Test: Pulse Width 300s, 2% 2) @ VDD = 25V , Peak IL = 3.1A , Starting TJ = 25C 3) @ ISD 3.1A , di/dt 75A/s , VDD BVDSS , TJ 150C , Suggested RG = 7.5 Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5517 Issue 1 2N6782LCC4 IRFE110 ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter VGS(th) gfs STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain - Source On-State Resistance 1 Gate Threshold Voltage Forward Transconductance 1 IDSS Zero Gate Voltage Drain Current IGSS IGSS Forward Gate - Source Leakage Reverse Gate - Source Leakage Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time BVDSS BVDSS TJ RDS(on) IS ISM VSD trr Qrr ton Test Conditions VGS = 0 ID = 1mA Reference to 25C ID = 1mA VGS = 10V ID = 2.25A VGS = 10V ID = 3.5A VDS = VGS ID = 250A VDS 15V IDS = 2.25A VGS = 0 VDS = 0.8BVDSS TJ = 125C VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 3.5A VDS = 0.5BVDSS Min. Typ. 100 RJC Thermal Resistance Junction - Case RJPC Thermal Resistance Junction - PC Board Unit V 0.12 V / C 0.6 0.69 4 2 0.8 25 250 100 -100 190 86 13 V S( ) A nA pF 6.6 1.7 3.5 15 25 25 20 VDD = 50V ID = 3.1A RG = 7.5 SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 TJ = 25C IS = 3.5A Diode Forward Voltage 1 VGS = 0 Reverse Recovery Time IF = 3.5A TJ = 25C 1 Reverse Recovery Charge di / dt 100A/s VDD 50V Forward Turn-On Time THERMAL CHARACTERISTICS Max. nC ns 3.5 14 A 1.5 V 180 2.0 ns C 8.3 27 C/W Negligible Notes 1) Pulse Test: Pulse Width 300ms, 2% 2) Repetitive Rating - Pulse width limited by maximum junction temperature. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5517 Issue 1