SIEMENS PNP Silicon AF Transistors Features @ For AF input stages and driver applications @ High current gain @ Low collector-emitter saturation voltage @ Low noise between 30 Hz and 15 kHz @ Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) BC 856 ...BC 860 VPSOS161 Type Marking Ordering Code Pin Configuration | Package) (tape and reel) 1 2 3 BC 856 A 3As Q62702-C1773 B E C | SOT-23 BC 856 B 3Bs Q62702-C 1886 BC 857A 3Es Q62702-C 1850 BC 857 B 3Fs Q62702-C1688 BC 857 C 3Gs Q62702-C1851 BC 858 A 3Us Q62702-C1742 BC 858 B 3Ks Q62702-C1698 BC 858 C 3Ls Q62702-C 1507 BC 859 A 4As Q62702-C 1887 BC 859 B 4Bs Q62702-C1774 BC 859 C 4Cs Q62702-C1761 BC 860 B 4Fs Q62702-C 1888 BC 860 C 4Gs Q62702-C1889 1\For detailed intormation see chapter Package Outlines. Semiconductor Group 503SIEMENS BC 856 ... BC 860 Maximum Ratings Parameter Symbol Values Unit BC 856 |BC 857 | BC 858 BC 860 | BC 859 Collector-ernitter voltage Vceo 65 45 30 Vv Collector-base voltage Vepo 80 50 30 Collector-ernitter voltage Voces 80 50 30 Emitter-base voltage Vewo 5 5 5 Collector current Ic 100 mA Peak collector current Tem 200 Peak base current Tem 200 Peak emitter current lem 200 Total power dissipation, Ts =71 C Prot 330 mw Junction ternperature Tj 150 Cc Storage temperature range Tag -65...+ 150 Thermal Resistance Junction - ambient Rtnsa < 310 K/W Junction - soldering point Rinss < 240 1)Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mmv/6 cm? Cu. Semiconductor Group 504SIEMENS BC 856 ... BC 860 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. |typ. | max DC characteristics Collector-emitter breakdown voltage Vericeo Vv Ic=10mMA BC 856 65 ~ - BC 857, BC 860 45 - _ BC 858, BC 859 30 - - Collector-base breakdown voltage Viercpo Ie=10 pA BC 856 80 - ~_ BC 857, BC 860 50 ~ - BC 858, BC 859 30 - ~ Collector-emitter breakdown voltage Vieryces Ic = 10 pA, Vee =0 BC 856 80 - - BC 857, BC 860 50 - - BC 858, BC 859 30 - ~ Emitter-base breakdown voltage Vereso | 5 - - fe=1pA Collector cutoff current IcBo Ves = 30 V ~ 1 15 nA Vos = 30 V, Ta = 150 C ~ - 4 pA DC current gain hre - Ic = 10 pA, Vee=5V BC 856A... BC 859A ~- 140 | - BC 856 B ... BC 860 B - 250 |- BC 857 C ... BC 860 C ~ 480 |- Io=2mA, Vcee=5V BC 856 A... BC 859 A 125 180 250 BC 856 B ... BC 860 B 220 |290 | 475 BC 857 C ... BC 860 C 420 |520 | 800 Collector-emitter saturation voltage) VoEsat mV Ic= 10 mA, Js =0.5 mA - 75 300 Io = 100 mA, 2 =5mA - 250 | 650 Base-emitter saturation voltage) Vaesat Ic= 10 mA, 22 =0.5 mA - 700 - Ic = 100 mA, fb=5 mA - 850 => Base-emitter voltage Vee{on} Ic= 2mMA, Vee =5V 600 650 750 Io = 10MA, Vce = 5 V - - 820 Pulse test: t< 300 ps, D= 2%. Semiconductor Group 505SIEMENS BC 856 ... BC 860 Electrical Characteristics at Ts = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. | max. AC characteristics Transition frequency f - 250 ~_ MHz Ic = 20 MA, Vee = 5 V, f= 100 MHz Output capacitance Cobo - 3 - pF Vea = 10 V, f= 1 MHz Input capacitance Coo - 8 - Vos = 0.5 V, f= 1 MHz Short-circuit input impedance hive kQ Ie =2 MA, Vee =5 V, f= 1 kHz BC 856A... BC 859A - 2.7 - BC 856B ... BC 860B - 45 - BC 857 C ... BC 860 C - 8.7 - Open-circuit reverse voltage transfer ratio hie 10-4 Ie=2 mA, Vee =5 V, f= 1 kHz BC 856A... BC 859A - 1.5 - BC 856 B ... BC 860B - 2.0 - BC 857 C ... BC 860 C - 3.0 - Short-circuit forward current transfer ratio hate ~ Ic=2MA, Vee =5 V, f= 1 kHz BC 856A... BC 859A - 200 - BC 856 B ... BC 860 B - 330 - BC 857 C ... BC 860 C - 600 ~ Open-circuit output admittance heze pS Ic=2 mA, Voce =5V, f= 1 kHz BC 856A... BC 859A - 18 - BC 856 B ... BC 860B - 30 - BC 857 C ... BC 860 C - 60 - Noise figure F dB Ie = 0.2 mA, Vee = 5 V, Rs = 2 kQ f= 30 Hz... 15 kHz BC 859 - 1.2 4 BC 860 - 1.0 3 f= 1 kHz, a f= 200 Hz BC 859 - 1.0 4 BC 860 - 1.0 4 Equivalent noise voltage Va - - 0.110 | pV Ie = 0.2 mA, Vee = 5 V, Rs = 2 kQ f=10Hz...50Hz BC 860 Semiconductor Group 506SIEMENS BC 856 ... BC 860 Total power dissipation Pi: = f (Ta*; 7s) Collector-base capacitance Ccso = f (Vcso) * Package mounted on epoxy Emitter-base capacitance Ceso = f (Veso) 400 BC 856...860 HP00375 12 BC 856...860 EHP00376 Copy PF Py mW (Creo) 10 300 N 8 i 200 6 100 N 0 50 100 C 150 Con 5 10 y 103 - Ik > Veao (Vepo) Permissible pulse load Prtmax/Proc =f (tp) Transition frequency fi = f (ic) Vee=5V BC _856...860 EHP00378 rm 1 AN & FHinia - Oooo Ni mili Hi ruil TE CTU 6 CTT 10 O08 17> 1074 10 102 5 10 to" 510 5 105 mA 10? + |, ae i Semiconductor Group 507SIEMENS BC 856 ... BC 860 Collector cutoff current /ceo = f (Ta) Vca = 30 V 19.4 Be. tS6..860 na EHPOO381 gq 103 3 10? 5 0 50 100 c 150 N DC current gain Are = f (Jc) Vce=5V 103 BC 856...860 EHP00382 5 [106 A Fe 36 tere 10! 10 10-2 10-' 510 10' ma 10? ~ i, Semiconductor Group Collector-emitter saturation voltage Ic =f (Vetsa), hre = 20 102 BC 856...B60 mA Ie 1a! 0 0.1 O02 O38 O04 V 0.5 Yog sal Base-emitter saturation voltage Ic =f (Veesa), hee = 20 102 BC856..860 EHPOO379 I, mA 10! 10 0 02 #04 06 08 V1.2 Yee sat 508SIEMENS BC 856 ... BC 860 h parameter fe = f (/c) normalized Voe=5V 102 BC 856...860 EHPOOSES 107! 5 10 - |, mA 10! Noise figure F = f (Vce) Ie = 0.2 MA, Rs = 2 kO, f= 1 kHz BC 856...860 EHPOO38S 20 dB wo7" 510 sot Y 10? Vee Semiconductor Group h parameter he = f (Vcc) normalized le=2mA BC 856...860 EHPO0SE4 2.0 0.5 Noise figure F = f (/) Io =0.2 mA, Rs = 2 kQ, Vee=5V BC 856...860 EWPOO3ES dB 10' kHz 102 wm ff 509SIEMENS BC 856 ... BC 860 Noise figure F =f (/c) Noise figure F = f (/c) Vee = 5 V, f= 120 Hz Vcc = 5 V, f= 1 kHz 20 BC 856...860 EMPO0387 20 BC 836...860 EHPOOsSa dB 4B F F 15 15 10 10 5 5 0 0 10731072, 107! = 10 =ma 10! 10-3 10-210! = 109 mA 10! i, |, Noise figure F = f (Ic) Vee = 5 V, f= 10 kHz 20 BC 856...860 EHPOO389 dB r 15 10 5 0 10-3 to-2 ta-! 10% ~ma 10! _s I, Semiconductor Group 510