1. Product profile
1.1 General description
PNP single switching transistor in a leadless ultra small DFN1006B-3 (SOT883B)
Surface-Mounted Device (SMD) plastic package.
NPN complement: PMBT3904MB.
1.2 Features and benefits
Single general-purpose switching transistor
AEC-Q101 qualified
Ultra small SMD plastic package
Board-space reduction
Low package height of 0.37 mm
1.3 Applications
General-purpose switching and amplification
Mobile applications
1.4 Quick reference data
2. Pinning information
PMBT3906MB
40 V, 200 mA PNP switching transistor
Rev. 1 — 2 April 2012 Product data sheet
SOT883B
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 40 V
ICcollector current - - 200 mA
hFE DC current gain VCE =1V;
IC=10 mA 100 180 300
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1base
2emitter
3 collector
3
1
2
Transparent
top view
sym013
3
2
1
PMBT3906MB_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 2 April 2012 2 of 13
NXP Semiconductors PMBT3906MB
40 V, 200 mA PNP switching transistor
3. Ordering information
4. Marking
[1] For DFN1006B-3 (SOT883B) binary marking code description, see Figure 1.
4.1 Binary marking code description
Tabl e 3. Ordering i nfo rmation
Type number Package
Name Description Version
PMBT3906MB DFN1006B-3 leadless ultra small plastic package;
3 solder lands; body 1.0 0.6 0.37 mm SOT883B
Table 4. Marking codes
Type number Marking code[1]
PMBT3906MB 0100 1000
Fig 1. DFN1006B-3 (SOT883B) binary marking code description
MARKING CODE
(EXAMPLE)
PIN 1 INDICATION READING DIRECTION
READING DIRECTION
READING EXAMPLE:
0111
1011
006aac673
PMBT3906MB_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 2 April 2012 3 of 13
NXP Semiconductors PMBT3906MB
40 V, 200 mA PNP switching transistor
5. Limiting values
[1] Reflow soldering is the only recommended soldering method.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 40 V
VCEO collector-emitter voltage open base - 40 V
VEBO emitter-base voltage open collector - 6V
ICcollector current - 200 mA
ICM peak collector current single pulse;
tp1ms -200 mA
IBM peak base current single pulse;
tp1ms -100 mA
Ptot total power dissipation Tamb 25 C[1][2] -250mW
[1][3] -590mW
Tjjunction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
PMBT3906MB_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 2 April 2012 4 of 13
NXP Semiconductors PMBT3906MB
40 V, 200 mA PNP switching transistor
6. Thermal characteristics
[1] Reflow soldering is the only recommended soldering method.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1][2] - - 500 K/W
[1][3] - - 212 K/W
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse dura tion; typical values
006aab603
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle =
10.75
0.5 0.33
0.2
0.1
0.05 0.02
0.01
0
PMBT3906MB_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 2 April 2012 5 of 13
NXP Semiconductors PMBT3906MB
40 V, 200 mA PNP switching transistor
7. Characteristics
[1] Pulse test: tp300 s; 0.02.
Table 7. Characteristics
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off
current VCB =30 V ; IE=0A - - 50 nA
IEBO emitter-base cut-of f
current VEB =6V; I
C=0A - - 50 nA
hFE DC current gain VCE =1V
IC=0.1 mA 60 180 -
IC=1 mA 80 180 -
IC=10 mA 100 180 300
IC=50 mA 60 130 -
IC=100 mA [1] 30 50 -
VCEsat collector-emitter
saturation voltage IC=10 mA; IB=1mA - 100 250 mV
IC=50 mA; IB=5mA - 165 400 mV
VBEsat base-emitter
saturation voltage IC=10 mA; IB=1mA - 750 850 mV
IC=50 mA; IB=5mA - 850 950 mV
tddelay time VCC =3V;
IC=10 mA;
IBon =1mA;
IBoff =1mA
--35ns
trrise time - - 35 ns
ton turn-on time - - 70 ns
tsstorage time - - 225 ns
tffall time - - 75 ns
toff turn-off time - - 300 ns
Cccollector capacitance VCB =5V; I
E=i
e=0A;
f=1MHz --4.5pF
Ceemitter capacitance VEB =500 mV;
IC=i
c=0A; f=1MHz --10pF
fTtransition frequency VCE =20 V;
IC=10 mA;
f = 100 MHz
250 - - MHz
NF noise figure VCE =5V;
IC=100 A; RS=1k;
f = 10 Hz to 15.7 kHz
--4dB
PMBT3906MB_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 2 April 2012 6 of 13
NXP Semiconductors PMBT3906MB
40 V, 200 mA PNP switching transistor
VCE =1V
(1) Tamb = 150 C
(2) Tamb =25C
(3) Tamb =55 C
Tamb =25C
Fig 3. DC current gain as a function of collector
current; typical values Fig 4. Collector current as a function of
collector-emitter voltage; typical values
006aab120
200
100
300
400
hFE
0
IC (mA)
−10−1−103
−102
−1−10
(1)
(2)
(3)
VCE (V)
0−10−8−4−6−2
006aab121
−0.1
−0.2
−0.3
IC
(A)
0
IB (mA) = −5.0
−4.5
−4.0
−3.5
−3.0
−0.5
−1.0
−2.5
−1.5
−2.0
PMBT3906MB_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 2 April 2012 7 of 13
NXP Semiconductors PMBT3906MB
40 V, 200 mA PNP switching transistor
VCE =1V
(1) Tamb =55 C
(2) Tamb =25C
(3) Tamb = 150 C
IC/IB=10
(1) Tamb =55 C
(2) Tamb =25C
(3) Tamb = 150 C
Fig 5. Base-emitter voltage as a function of collector
current; typical values Fig 6. Base-emitter saturation vo ltage as a function
of collector current; typica l values
IC/IB=10
(1) Tamb = 150 C
(2) Tamb =25C
(3) Tamb =55 C
Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values
006aab123
−0.6
−0.8
−0.4
−1.0
−1.2
VBE
(V)
−0.2
IC (mA)
−10−1−103
−102
−1−10
(1)
(2)
(3)
006aab124
−0.6
−0.8
−0.4
−1.0
−1.2
VBEsat
(V)
−0.2
IC (mA)
−10−1−103
−102
−1−10
(1)
(2)
(3)
006aab122
IC (mA)
−10−1−103
−102
−1−10
−10−1
−1
VCEsat
(V)
−10−2
(1)
(2)
(3)
PMBT3906MB_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 2 April 2012 8 of 13
NXP Semiconductors PMBT3906MB
40 V, 200 mA PNP switching transistor
8. Test information
9. Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
10. Package outline
VI= 5 V; t = 600 s; tp=10s; tr=t
f3ns
R1 = 56 ; R2 = 2.5 k; RB=3.9k; RC= 270
VBB =1.9 V; VCC =3V
Oscilloscope: input impedance Zi=50
Fig 8. Test circuit for switching times
R
C
R2
R1
DUT
mlb826
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
V
BB
V
I
V
CC
Fig 9. Package outline DFN1006B-3 (SOT883B)
PMBT3906MB_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 2 April 2012 9 of 13
NXP Semiconductors PMBT3906MB
40 V, 200 mA PNP switching transistor
11. Packing information
[1] For further information and the availability of packing methods, see Section 15.
12. Soldering
Table 8. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
10000
PMBT3906MB DFN1006B-3
(SOT883B) 2 mm pitch, 8 mm tape and reel -315
Reflow soldering is the only recommended soldering method.
Fig 10. Reflow soldering footprint DF N1006B-3 (SOT883B)
1.3
0.3
0.6 0.7
0.4
0.9
0.3
(2x)
0.4
(2x)
0.25
(2x)
R0.05 (8x)
0.7
Footprint information for reflow soldering SOT883B
sot883b_fr
occupied area
solder land
solder resist
solder land plus solder paste
solder paste deposit
Dimensions in mm
PMBT3906MB_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 2 April 2012 10 of 13
NXP Semiconductors PMBT3906MB
40 V, 200 mA PNP switching transistor
13. Revision history
Table 9. Revision history
Document ID Release da te Data sheet status Change notice Supersedes
PMBT3906MB v.1 20120402 Product data sheet - -
PMBT3906MB_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 2 April 2012 11 of 13
NXP Semiconductors PMBT3906MB
40 V, 200 mA PNP switching transistor
14. Legal information
14.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full dat a
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specificatio n — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
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deemed to off er functions and qualities beyond tho se described in the
Product data sheet.
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Limited warr a nty and liability — Information in this document is believed to
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Applications — Applications that are described herein for any of these
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Customers are responsible for the design and ope ration of their applications
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customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if presen t) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
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other industrial or intellectual property right s.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product develop ment.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
PMBT3906MB_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 2 April 2012 12 of 13
NXP Semiconductors PMBT3906MB
40 V, 200 mA PNP switching transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
14.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
15. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors PMBT3906MB
40 V, 200 mA PNP switching transistor
© NXP B.V. 2012. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 2 April 2012
Document identifier: PMBT3906MB_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
16. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
4.1 Binary marking code description. . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Quality information . . . . . . . . . . . . . . . . . . . . . . 8
10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
11 Packing information . . . . . . . . . . . . . . . . . . . . . 9
12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
14.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
15 Contact information. . . . . . . . . . . . . . . . . . . . . 12
16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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