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Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx
FEATURES
DIRECTREPLACEMENTFORSILICONIXJ308
OUTSTANDINGHIGHFREQUENCYGAIN G
=11.5dB
LOWHIGHFREQUENCYNOISENF=2.7dB
ABSOLUTEMAXIMUMRATINGS@25°C
MaximumTemperatures
StorageTemperature‐55°Cto+150°C
OperatingJunctionTemperature‐55°Cto+135°C
MaximumPowerDissipation
ContinuousPowerDissipation 350mW
MAXIMUMCURRENT
GateCurrent10mA
MAXIMUMVOLTAGES
GatetoDrainVoltageorGatetoSourceVoltage‐25V
LSJ308ELECTRICALCHARACTERISTICS@25°C(unlessotherwisenoted)
SYMBOLCHARACTERISTICMINTYP.MAXUNITCONDITIONS
BVGSSGatetoSourceBreakdownVoltage‐25 ‐‐ ‐‐ VVDS=0V,IG=‐1µA
VGS
F
GatetoSourceForwardVoltage0.7 ‐‐ 1VDS=0V,IG=10mA
VGS
off
GatetoSourceCutoffVoltage‐1 ‐‐ ‐6.5VDS=10V,ID=1nA
IDSSDraintoSourceSaturationCurrent
12 ‐‐ 60mAVDS=10V,VGS=0V
IGGateOperatingCurrent(Note3) ‐‐ ‐15 ‐‐ pAVDG=9V,ID=10mA
rDS
on
DraintoSourceOnResistance ‐‐ 35 ‐‐ Ω VGS=0V,ID=1mA
LSJ308DYNAMICELECTRICALCHARACTERISTICS@25°C(unlessotherwisenoted)
SYMBOLCHARACTERISTICMINTYP.MAXUNITCONDITIONS
gfsForwardTransconductance814 ‐‐ mSVDS=10V,ID=10mA,f=1kHz
gosOutputConductance ‐‐ 110250µS
CissInputCapacitance ‐‐ 45pFVDS=10V,VGS=‐10V,f=1MHz
CrssReverseTransferCapacitance ‐‐ 1.92.5
enEquivalentNoiseVoltage6 ‐‐ ‐‐ nV/√HzVDS=10V,ID=10mA,f=100Hz
LSJ308HIGHFREQUENCYCHARACTERISTICS@25°C(unlessotherwisenoted)
SYMBOLCHARACTERISTICMINTYPMAXUNITCONDITIONS
NFNoiseFiguref=105MHz ‐‐ 1.5 ‐‐ dB
VDS=10V,ID=10mA
f=450MHz ‐‐ 2.7 ‐‐ dB
GpgPowerGain
f=105MHz ‐‐ 16 ‐‐
f=450MHz ‐‐ 11.5 ‐‐
gfgForwardTransconductancef=105MHz ‐‐ 14 ‐‐
mS
f=450MHz ‐‐ 13 ‐‐
gogOutputConductancef=105MHz ‐‐ 0.16 ‐‐
f=450MHz ‐‐ 0.55 ‐‐
LSJ308
N-CHANNEL JFET
Linear S
stems re
laces discontinued Siliconix J308
The LSJ308 is a high frequency n-channel JFET
offering a wide range and low noise performance. The
SOT-23 package is well suited for cost sensitive
applications and mass production.
(See Packaging Information).
LSJ308 Applications:
UHV / VHF Amplifiers
Mixers
Oscillators
LSJ308 Benefits:
High Power Low Noise gain
Dynamic Range greater than 100dB
Easil
matched to 75Ω in
ut
Micross Components Europe
Available Packages:
LSJ308 in SOT-23
LSJ308 in bare die.
Please contact Micross for full
package and die dimensions
Note1‐AbsolutemaximumratingsarelimitingvaluesabovewhichLSJ308 serviceabilitymaybeimpaired.
Note2‐Pulsetest:PW≤300µs,DutyCycle≤3%
Note3‐Measuredatoptimuminputnoisematch
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
SOT-23 (Top View)