LESHAN RADIO COMPANY, LTD.
O6–1/5
1
3
2
MMBT2369LT1
MMBT2369ALT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Switching Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V CEO 15 Vdc
Collector–Emitter V oltage V CES 40 Vdc
Collector–Base V oltage V CBO 40 Vdc
Emitter–Base V oltage V EBO 4.5 Vdc
Collector Current — Continuous I C200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) PD225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient RθJA 55 6 °C/W
Total Device Dissipation PD300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ , Tstg –55 to +150 °C
DEVICE MARKING
MMBT2369LT1 = M1J, MMBT2369ALT1 = 1JA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage(3) V (BR)CEO 15 — — Vdc
(I C = 10 mAdc, I B = 0)
Collector–Emitter Breakdown Voltage V (BR)CES 40 — — Vdc
(I C = 10 µAdc, V BE = 0)
Collector–Base Breakdown V oltage V (BR)CBO 40 — — Vdc
(I C = 10 µAdc, I E = 0)
Emitter–Base Breakdown V oltage V (BR)EBO 4.5 — — Vdc
(I E = 10 µAdc, I C = 0)
Collector Cutoff Current( V CB = 20Vdc, I E = 0) I CBO — — 0.4 µAdc
( V CB = 20Vdc, I E = 0, T A=150 °C) — — 30
Collector Cutoff Current I CES — — 0.4 µAdc
( V CE = 20Vdc, V BE = 0) MMBT2369A
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
<
300 µs, Duty Cycle
<
2.0%.
LESHAN RADIO COMPANY, LTD.
O6–2/5
MMBT2369LT1 MMBT2369ALT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Mi n T y p Max Unit
ON CHARACTERISTICS
DC Current Gain(3) hFE ––
(I C = 10 mAdc, V CE = 1.0 Vdc) MMBT2369 40 –– 120
(I C = 10 mAdc, V CE = 1.0 Vdc) MMBT2369A –– –– 120
(I C = 10 mAdc, V CE = 0.35 Vdc) MMBT2369A 40 –– ––
(I
C
= 10 mAdc, V
CE
= 0.35 Vdc,T
A
= –55°C )
MMBT2369A 20 –– ––
(I C = 30 mAdc, V CE = 0.4Vdc) MMBT2369A 30 –– ––
(I C = 100mAdc, V CE = 2.0 Vdc) MMBT2369 20 –– ––
(I C = 100mAdc, V CE = 1.0 Vdc) MMBT2369A 20 –– ––
Collector–Emitter Saturation V oltage(3) VCE(sat) Vdc
(I C = 10 mAdc, I B = 1.0 mAdc) MMBT2369 –– –– 0.25
(I C = 10 mAdc, I B = 1.0 mAdc) MMBT2369A –– –– 0.20
(I C = 10 mAdc, I B = 1.0 mAdc,
T
A
= + 125°C
) MMBT2369A –– –– 0.30
(I C = 30mAdc, I B = 3.0 mAdc) MMBT2369A –– –– 0.25
(I C = 100mAdc, I B = 10 mAdc) MMBT2369A –– –– 0.50
Base–Emitter Saturation Voltage V BE(sat) Vdc
(I C = 10 mAdc, I B = 1.0 mAdc) MMBT2369A 0.7 –– 0.85
(I C = 10 mAdc, I B = 1.0 mAdc,
T
A
= – 55°C
) MMBT2369A –– –– 1.02
(I C = 30 mAdc, I B = 3.0 mAdc) MMBT2369A –– –– 1.15
(I C = 100 mAdc, I B = 10 mAdc) MMBT2369A –– –– 1.60
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz) C obo –– –– 4.0 pF
Small–Signal Current Gain h fe 5.0 — — —
(V CE=10 Vdc, I C = 10 mAdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Storage T ime t s— 5.0 13 ns
(I B1 = I B2 = I C = 10 mAdc)
Turn–On T ime t on — 8.0 12 ns
(V CC = 3.0 Vdc, I C = 10 mAdc, I B1 = 3.0 mAdc)
T urn–Off Time t off —1018ns
(V CC = 3.0 Vdc, I C = 10 mAdc, I B1 = 3.0 mAdc, I B2 = 1.5 mAdc)
3. Pulse Test: Pulse Width
<
300 ms, Duty Cycle
<
2.0%.
LESHAN RADIO COMPANY, LTD.
O6–3/5
MMBT2369LT1 MMBT2369ALT1
SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR 2N2369, 2N3227
Figure 1. t on Circuit — 10 mA
+10.6 V
–1.5 V
0
t 1
< 1 ns
PULSE WIDTH (t 1 ) = 300 ns
DUTY CYCLE = 2%
3 V 270 Ω
3.3 k C s * < 4 pF
+10.75V
–9.15 V
0
t 1
< 1 ns
PULSE WIDTH (t 1 ) = 300 ns
DUTY CYCLE = 2%
3 V 270 Ω
3.3 k C s * < 4 pF
+10.8 V
–2 V
0
t 1
< 1 ns
PULSE WIDTH (t 1 ) = 300 ns
DUTY CYCLE = 2%
10V 95 Ω
1 k C s * < 12 pF
+11.4 V
–8.6 V
0
t 1
< 1 ns
PULSE WIDTH (t 1 ) BETWEEN
10AND 500 µs
DUTY CYCLE = 2%
10V 95 Ω
1 k
C s * < 12 pF
1N916
Figure 3. t off Circuit — 10 mA
Figure 2. t on Circuit — 100 mA Figure 4. t off Circuit — 100 mA
Figure 5. Turn–On and Turn–Off Time Test Circuit
TURN–OFF W AVEFORMS
V out 90%
10%
V in
0
t on V in
3.3 kΩ
50 Ω
220 Ω
50 Ω
0.1 µFV out
3.3 k
0.0023 µF 0.0023 µF
0.005 µF 0.005 µF
0.1 µF0.1 µF
V BB V CC = 3 V
TURN–ON WAVEFORMS
PULSE GENERATOR
V in RISE TIME < 1 ns
SOURCE IMPEDANCE = 50 Ω
PW
>
300 ns
DUTY CYCLE < 2%
V BB = +12 V
V in = –15 V
TO OSCILLOSCOPE
INPUT IMPEDANCE = 50 Ω
RISE TIME = 1 ns
V out 90%
10%
V in
0
t off
LIMIT
TYPICAL
SWITCHING TIMES (nsec)
I C , COLLECTOR CURRENT (mA)
Figure 7. Typical Switching Times
REVERSE BIAS (VOLTS)
Figure 6. Junction Capacitance Variations
C
ob
C
ib
T
J
= 25°C
CAPACITANCE (pF)
6
5
4
3
2
10.1 0.2 0.5 1.0 2.0 5.0 10 1 2 5 10 20 50 100
100
50
20
10
5
2
β
F
= 10
V
CC
= 10 V
V
OB
= 2 V
V
CC
= 10 V
t
r
t
f
t
r
(V
CC
= 3 V)
t
d
t
s
LESHAN RADIO COMPANY, LTD.
O6–4/5
MMBT2369LT1 MMBT2369ALT1
25°C
100°C
Q T,β F =10
I C , COLLECTOR CURRENT (mA)
Figure 8. Maximum Charge Data
V CC = 10 V
Q T,β F=40
Q A ,V CC=10V
Q A,V CC =3 V
+5 V
0
t 1
< 1 ns
PULSE WIDTH (t 1 ) = 5 ms
DUTY CYCLE = 2%
3 V 270
4.3 k C s * < 4 pF
10 pF MAX
VALUES REFER TO
I C = 10 mA TEST
∆V
Figure 9. Q T Test Circuit
500
200
100
50
20
10 1 2 5 10 20 50 100
CHARGE (pF)
+6 V
–4 V
0
t 1
< 1 ns
PULSE WIDTH (t 1 ) = 300 ns
DUTY CYCLE = 2%
10 V 980
500
C s * < 3 pF
C C OPT
TIME
C < C OPT C = 0
V CE , MAXIMUM COLLECTOR– EMITTER
VOLTAGE (VOLTS)
I B , BASE CURRENT (mA)
Figure 12. Maximum Collector Saturation Voltage Characteristics
I C=3mA
Figure 10. Turn–Off Waveform Figure 11. Storage Time Equivalent Test Circuit
IC=10 mA IC=30mA I C=50mA I C=100mA
TJ= 25°C
0.02 0.05 0.1 0.2 0.5 1 2 5 10 20
1.0
0.8
0.6
0.4
0.2
LESHAN RADIO COMPANY, LTD.
O6–5/5
MMBT2369LT1 MMBT2369ALT1
β
F
= 10
T
J
= 25°C
h FE , MINIMUM DC CURRENT GAIN
I C , COLLECTOR CURRENT (mA)
Figure 13. Minimum Current Gain Characteristics
V (sat) , SATURATION VOLTAGE (VOLTS)
COEFFICIENT (mV/°C )
V
CE
= 1 V
I C , COLLECTOR CURRENT (mA)
Figure 14. Saturation Voltage Limits
I C , COLLECTOR CURRENT (mA)
Figure 15. Typical Temperature Coefficients
T
J
= 125°C
75°C
25°C
–15°C
–55°C
T
J
= 25°C and 75°C
MAX V
BE(sat)
MIN V
BE(sat)
MAX V
CE(sat)
(25°C to 125°C)
(–55°C to +25°C)
(–55°C to +25°C)
(25°C to 125°C)
θ
VC
for V
CE(sat)
θ
VB
for V
BE(sat)
APPROXIMATE DEVIA TION
FROM NOMINAL
–55°C to +25°C 25°C to 125°C
θ
VC
±0.15 mV/°C ±0.15 mV/°C
θ
VB
±0.4 mV/°C ±0.3 mV/°C
1 2 5 10 20 50 100
200
100
50
20
1.4
1.2
1.0
0.8
0.6
0.4
0.2 1 2 51020 50100
1.0
0.5
0
–0.5
–0.1
–1.5
–2.0
–2.50 10 20 30 40 50 60 70 80 90 100
