VS-ST733CL Series
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Inverter Grade Thyristors
(Hockey PUK Version), 940 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• International standard case B-PUK (TO-200AC)
• High surge current capability
• Low thermal impedance
• High speed performance
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
Package B-PUK (TO-200AC)
Circuit configuration Single SCR
IT(AV) 940 A
VDRM/VRRM 400 V, 800 V
VTM 1.63 V
ITSM at 50 Hz 20 000 A
ITSM at 60 Hz 20 950 A
IGT 200 mA
TC/Ths 55 °C
B-PUK (TO-200AC)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
940 A
Ths 55 °C
IT(RMS)
1900 A
Ths 25 °C
ITSM
50 Hz 20 000 A
60 Hz 20 950
I2t50 Hz 2000 kA2s
60 Hz 1820
VDRM/VRRM 400 to 800 V
tqRange 10 to 20 μs
TJ-40 to +125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
VOLTAGE
V
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VS-ST733C..L 04 400 500 75
08 800 900
VS-ST733CL Series
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CURRENT CARRYING CAPABILITY
FREQUENCY UNITS
50 Hz 2200 1900 3580 3100 6800 5920
A
400 Hz 2050 1660 3600 3130 3750 3240
1000 Hz 1370 1070 2900 2450 2120 1780
2500 Hz 500 370 1220 980 960 770
Recovery voltage VR50 50 50 V
Voltage before turn-on VDVDRM VDRM VDRM
Rise of on-state current dI/dt 50 - - A/μs
Heatsink temperature 405540554055°C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 /μF
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state
current at heatsink temperature IT(AV) 180° conduction, half sine wave
double side (single side) cooled
940 (350) A
55 (85) °C
Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 1900
A
Maximum peak, one half cycle,
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
20 000
t = 8.3 ms 20 950
t = 10 ms 100 % VRRM
reapplied
16 800
t = 8.3 ms 17 600
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
2000
kA2s
t = 8.3 ms 1820
t = 10 ms 100 % VRRM
reapplied
1410
t = 8.3 ms 1290
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 20 000 kA2s
Maximum peak on-state voltage VTM ITM = 1700 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse 1.63
V
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.09
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.20
Low level value of forward slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.32
m
High level value of forward slope
resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.29
Maximum holding current IHTJ = 25 °C, IT > 30 A 600 mA
Typical latching current ILTJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current dI/dt TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt
Gate pulse: 20 V 20 , 10 μs 0.5 μs rise time 1000 A/μs
Typical delay time tdTJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source 1.5
μs
Maximum turn-off time minimum tqTJ = TJ maximum, ITM = 550 A, commutating dI/dt = 40 A/μs,
VR = 50 V, tp = 500 μs, dV/dt: see table in device code
10
maximum 20
180° el
ITM
180° el
ITM
100 µs
ITM
VS-ST733CL Series
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Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request 500 V/μs
Maximum peak reverse and off-state leakage current IRRM,
IDRM TJ = TJ maximum, rated VDRM/VRRM applied 75 mA
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM TJ = TJ maximum, f = 50 Hz, d% = 50 60 W
Maximum average gate power PG(AV) 10
Maximum peak positive gate current IGM
TJ = TJ maximum, tp 5 ms
10 A
Maximum peak positive gate voltage +VGM 20 V
Maximum peak negative gate voltage -VGM 5
Maximum DC gate current required to trigger IGT TJ = 25 °C, VA = 12 V, Ra = 6 200 mA
Maximum DC gate voltage required to trigger VGT 3V
Maximum DC gate current not to trigger IGD TJ = TJ maximum, rated VDRM applied 20 mA
Maximum DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range TJ-40 to +125 °C
Maximum storage temperature range TStg -40 to +150
Maximum thermal resistance, junction to heatsink RthJ-hs
DC operation single side cooled 0.073
K/W
DC operation double side cooled 0.031
Maximum thermal resistance, case to heatsink RthC-hs
DC operation single side cooled 0.011
DC operation double side cooled 0.005
Mounting force, ± 10 % 14 700
(1500)
N
(kg)
Approximate weight 255 g
Case style See dimensions - link at the end of datasheet B-PUK (TO-200AC)
RthJ-hs CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.009 0.009 0.006 0.006
TJ = TJ maximum K/W
120° 0.011 0.011 0.011 0.011
90° 0.014 0.014 0.015 0.015
60° 0.020 0.021 0.021 0.022
30° 0.036 0.036 0.036 0.036
VS-ST733CL Series
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700
30° 60°
90°
120° 180°
Average On-state Current (A)
Conduction Angle
Maximum Allowable Heatsink
Temperature (°C)
ST733C..L Series
(Single Side Cooled)
R (DC) = 0.073 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink
Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000
DC
30° 60°
90°
120° 180°
Conduction Period
ST733C..L Series
(Single Side Cooled)
R (DC) = 0.073 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink
Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200 1400
30° 60° 90° 120° 180°
Conduction Angle
ST733C..L Series
(Double Side Cooled)
R (DC) = 0.031 K/W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 500 1000 1500 2000
DC
30°
60°
90°
120°
180°
Conduction Period
ST733C..L Series
(Double Side Cooled)
R (DC) = 0.031 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink
Temperature (°C)
0
500
1000
1500
2000
2500
0 200 400 600 800 1000 1200 1400
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
Maximum Average On-state
Power Loss (W)
Average On-state Current (A)
ST733C..L Series
T = 125°C
J
0
500
1000
1500
2000
2500
0 200 400 600 800 1000 1200 1400
Maximum Average On-state
Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
ST733C..L Series
T = 125°C
J
VS-ST733CL Series
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Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJC Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovered Current Characteristics
8000
10 000
12 000
14 000
16 000
18 000
1 10 100
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Peak Half Sine Wave
On-state Current (A)
ST733C..L Series
Initial TJ = 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
8000
10 000
12 000
14 000
16 000
18 000
20 000
0.01 0.1 1
Pulse Train Duration (s)
Versus Pulse Train Duration. Control
Initial TJ = 125°C
No Voltage Reapplied
Rated VRRM Reapplied
Of Conduction May Not Be Maintained.
Maximum Non Repetitive Surge Current
ST733C..L Series
Peak Half Sine Wave
On-state Current (A)
100
1000
10 000
0.5 1 1.5 2 2.5 3 3.5 4 4.5
T = 25 °C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125 °C
J
ST733C..L Series
Z
thJ-hs - Transient Thermal Impedance (K/W)
0.001
0.01
0.1
0.001 0.01 0.1 1 10 100
Square Wave Pulse Duration (s)
ST733C..L Series
Steady State Value
R = 0.073 K/W
(Single Side Cooled)
R = 0.031 K/W
(Double Side Cooled)
(DC Operation)
thJ-hs
thJ-hs
Qrr - Maximum Reverse Recovery Charge (μC)
0
50
100
150
200
250
300
350
400
450
10 20 30 40 50 60 70 80 90 100
500 A
I = 1500 A
1000 A
ST733C..L Series
T = 125 °C
J
TM
dIFdt - Rate of Fall of On-State Current (A/μs)
Irr - Maximum Reverse Recovery Current (A)
10 20 30 40 50 60 70 80 90 100
dIFdt - Rate of Fall of Forward Current (A/μs)
0
50
100
150
200
250
I = 1500 A
1000 A
500 A
ST733C..L Series
T = 125 °C
J
TM
VS-ST733CL Series
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Fig. 13 - Frequency Characteristics
Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
1E2
1E3
1E4
1E5
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse Basewidth (μs)
Peak On-state Current (A)
1000
1500
3000
200
ST733C..L Series
Sinusoidal pulse
T = 40°C
C
5000
tp
Snubber circuit
RS = 10 Ω
CS = 0.47 μF
VD = 80 % VDRM
1E2
1E3
1E4
1E5
1E1 1E2 1E3 1E4
Pulse Basewidth (μs)
Peak On-state Current (A)
50 Hz
400
2500
100
200
5000
1000
3000
1500
Snubber circuit
R
S
= 10 Ω
C
S
= 0.47 μF
V
D
= 80 % V
DRM
ST733C..L Series
Sinusoidal pulse
T = 55 °C
C
t
p
1E2
1E3
1E4
1E5
1E1 1E2 1E3 1E4
Pulse Basewidth (μs)
Peak On-state Current (A)
50 Hz
400
2500
100
1000
1500
200
5000
500
2000
3000
ST733C..L Series
Trapezoidal pulse
T = 40°C
di/dt = 50A/μs
C
tp
Snubber circuit
RS = 10 Ω
CS = 0.47 μF
VD = 80 % VDRM
1E2
1E3
1E4
1E5
1E1 1E2 1E3 1E4
Pulse Basewidth (μs)
Peak On-state Current (A)
50 Hz
400
2500
100
1000
1500
200
3000
500
2000
ST733C..L Series
Trapezoidal pulse
T = 55 °C
di/dt = 50 A/μs
C
tp
Snubber circuit
RS = 10 Ω
CS = 0.47 μF
VD = 80 % VDRM
1E2
1E3
1E4
1E5
1E1 1E2 1E3 1E4
Pulse Basewidth (μs)
Peak On-state Current (A)
50 Hz
400
2500
100
1000
1500
200
5000
500
2000
3000
ST733C..L Series
Trapezoidal pulse
T = 40°C
di/dt = 50A/μs
C
tp
Snubber circuit
RS = 10 Ω
CS = 0.47 μF
VD = 80 % VDRM
50 Hz
400
2500
100
1000
1500
200
3000
500
2000
1E2
1E3
1E4
1E5
1E1 1E2 1E3 1E4
Pulse Basewidth (μs)
Peak On-state Current (A)
ST733C..L Series
Trapezoidal pulse
T = 55 °C
di/dt = 50A/μs
tp
Snubber circuit
RS = 10 Ω
CS = 0.47 μF
VD = 80 % VDRM
VS-ST733CL Series
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Fig. 16 - Maximum On-State Energy Power Loss Characteristics
Fig. 17 - Gate Characteristics
Pulse Basewidth (μs)
Peak On-state Current (A)
1E1
1E2
1E3
1E4
1E5
1E1 1E2 1E3 1E4
20 joules per pulse
2
1
0.5
10
5
3
ST733C..L Series
Sinusoidal pulse
0.4
0.3
tp
Pulse Basewidth (μs)
Peak On-state Current (A)
1E1
1E2
1E3
1E4
1E5
1E1 1E2 1E3 1E4
20 joules per pulse
2
1
0.5
10
5
0.4
0.3
ST733C..L Series
Rectangular pulse
di/dt = 50 A/μs
tp
3
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
(1) (2) (3)
Instantaneous Gate Current (A)
Frequency Limited by PG (AV)Device: ST733C..L Series
(4)
Instantaneous Gate Voltage (V)
TJ = 25 °C
TJ = 40 °C
TJ = 125 °C
(1) PGM = 10 W, tp = 20 ms
(2) PGM = 20 W, tp = 10 ms
(3) PGM = 40 W, tp = 5 ms
(4) PGM = 60 W, tp = 3.3 ms
a) Recommended load line for
rated di/dt : 20 V, 10 Ω; tr<= 1 μs
Rectangular gate pulse
b) Recommended load line for
<= 30 % rated di/dt : 10 V, 10 Ω
tr <= 1 μs
VS-ST733CL Series
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ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95076
3 = fast-on terminals
- Thyristor
1-Vishay Semiconductors product
2
-Essential part number
3
- 3 = fast turn-off
4
- C = ceramic PUK
5
- Voltage code x 100 = VRRM
10
6
- L = PUK case B-PUK (TO-200AC)
7
- Reapplied dV/dt code (for tq test condition)
8
-t
q code
9
- 0 = eyelet terminals
1 = fast-on terminals
dV/dt - tq combinations available
dV/dt (V/μs) 20 50 100 200 400
10
12
CN DN EN
tq (μs)
2 = eyelet terminals
11 - Critical dV/dt:
None = 500 V/μs (standard value)
L = 1000 V/μs (special selection)
* Standard part number.
All other types available only on request.
15 CL DL EL FL* HL
CM DM EM FM*
20
CP DP EP FP HP
18
(see Voltage Ratings table)
(gate and auxiliary cathode unsoldered leads)
(gate and auxiliary cathode unsoldered leads)
(gate and auxiliary cathode soldered leads)
(gate and auxiliary cathode soldered leads)
CK DK EK FK H
--
-
Device code
51 32 4 6 7 8 9 10 11
STVS-733 C08L H K 1 -
Outline Dimensions
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B-PUK (TO-200AC)
DIMENSIONS in millimeters (inches)
Pin receptacle
AMP. 60598-1
0.7 (0.03) MIN. 34 (1.34) DIA. MAX.
2 places
53 (2.09) DIA. MAX.
58.5 (2.3) DIA. MAX.
2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep
4.7 (0.18)
27 (1.06) MAX.
0.7 (0.03) MIN.
6.2 (0.24) MIN.
36.5 (1.44)
Creepage distance: 36.33 (1.430) minimum
Strike distance: 17.43 (0.686) minimum
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
20° ± 5°
C
A
Note:
A = Anode
C = Cathode
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