APT8024B2VFR APT8024LVFR 800V 33A 0.240W POWER MOS V (R) FREDFET B2VFR Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. T-MAXTM TO-264 LVFR * Identical Specifications: T-MAXTM or TO-264 Package D * Lower Leakage * Faster Switching * Fast Recovery Body Diode * 100% Avalanche Tested MAXIMUM RATINGS Symbol VDSS ID G S All Ratings: TC = 25C unless otherwise specified. Parameter APT8024 UNIT 800 Volts L A C I N H C N E T O I D T E A C M N R A O V F D A IN Drain-Source Voltage 33 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 625 Watts Linear Derating Factor 5.0 W/C VGSM PD TJ,TSTG 132 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 300 33 (Repetitive and Non-Repetitive) 1 EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy Volts C Amps 50 4 3000 mJ STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 800 Volts 33 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) TYP MAX 0.240 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 UNIT Ohms A Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 rev- 11-99 BVDSS Characteristic / Test Conditions 050-5907 Symbol DYNAMIC CHARACTERISTICS Symbol APT8024 B2VFR - LVFR Test Conditions Characteristic MIN TYP Ciss Input Capacitance VGS = 0V 7700 Coss Output Capacitance VDS = 25V 750 Crss Reverse Transfer Capacitance f = 1 MHz 370 Qg Qgs Qgd t d(on) tr t d(off) tf MAX pF L A C I N H C N E T O I D T E A C M N R A O V F D A IN Total Gate Charge 3 VGS = 10V 390 VDD = 0.5 VDSS ID = ID [Cont.] @ 25C 35 202 Gate-Source Charge Gate-Drain ("Miller") Charge VGS = 15V 18 VDD = 0.5 VDSS 15 ID = ID [Cont.] @ 25C 66 RG = 0.6W 9 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time UNIT nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristic / Test Conditions Pulsed Source Current VSD Diode Forward Voltage dt TYP Peak Diode Recovery 1 132 (Body Diode) 2 dv/ dt MAX 33 Continuous Source Current (Body Diode) ISM dv/ MIN (VGS = 0V, IS = -ID [Cont.]) 5 UNIT Amps 1.3 Volts 5 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 320 Tj = 125C 650 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 2.2 Tj = 125C 7.5 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 14 Tj = 125C 24 ns C Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP Junction to Case RqJA Junction to Ambient 40 APT Reserves the right to change, without notice, the specifications and information contained herein. T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 25.48 (1.003) 26.49 (1.043) 2.87 (.113) 3.12 (.123) 1.01 (.040) 1.40 (.055) Gate Collector Emitter 19.81 (.780) 21.39 (.842) Gate Collector Emitter 0.48 (.019) 0.76 (.030) 0.84 (.033) 1.30 (.051) 2.79 (.110) 2.59 (.102) 3.18 (.125) 3.00 (.118) 5.45 (.215) BSC 2-Plcs. 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 2.29 (.090) 2.69 (.106) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 2.21 (.087) 2.59 (.102) 5.79 (.228) 6.20 (.244) Collector Collector 5.38 (.212) 6.20 (.244) 0.40 (.016) 0.79 (.031) C/W 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 5.51mH, R = 25W, Peak I = 33A j G L 5 I -I [Cont.], di/ = 100A/s, T 150C, R = 2.0W, V = 200V. S D j G R dt temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% rev- 11-99 UNIT 0.20 RqJC 1 Repetitive Rating: Pulse width limited by maximum junction 050-5907 MAX Dimensions in Millimeters and (Inches) 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058