2 Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.2 °C/W
Thermal Resistance, Junction to Ambient RθJA 60 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Peak Blocking Current(1)
(VD = Rated VDRM) TJ = 25°C
TJ = 125°C
IDRM —
——
—10
2µA
mA
Peak On-State Voltage
(ITM = 35 A Peak, Pulse Width
p
2 ms, Duty Cycle
p
2%) VTM — 1.4 1.85 Volts
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2( –), G(–); MT(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
IGT
—
—20
30 50
75
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(–), G(–); MT(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
(VD = Rated VDRM, TJ = 125°C, RL = 10 k)
MT(+), G(+); MT2(–), G(–); MT2(+), G(–)
MT2(–), G(+) “A” SUFFIX ONLY
VGT
—
—
0.2
0.2
1.1
1.3
0.4
0.4
2
2.5
—
—
Volts
Holding Current
(VD = 12 V, ITM = 200 mA, Gate Open) IH— 10 50 mA
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA) tgt — 1.5 — µs
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, TC = 125°C) dv/dt — 40 — V/µs
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 35 A Peak, Commutating
di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C)
dv/dt(c) — 5 — V/µs
1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage
applied exceeds the rated blocking voltage.
P , AVERAGE POWER DISSIPATION (WATTS)
T , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
75
95
10
IT(RMS), RMS ON-STATE CURRENT (AMPS)
00 2520
40
30
20
10
25205.0
125
115
85
10
FIGURE 1 – RMS CURRENT DERATING
5.0 15
FIGURE 2 – ON-STATE POWER DISSIPATION
0 15
105
IT(RMS), RMS ON-STATE CURRENT (AMPS)
D
°
C