LTC5535
1
5535f
TYPICAL APPLICATIO
U
APPLICATIO S
U
DESCRIPTIO
U
FEATURES
■
802.11a, 802.11b, 802.11g, 802.15, 802.16
■
Multimode Mobile Phone Products
■
Optical Data Links
■
Wireless Data Modems
■
Wireless and Cable Infrastructure
■
RF Power Alarm
■
Envelope Detector
■
Temperature Compensated Internal Schottky
Diode RF Detector
■
Wide Input Frequency Range: 600MHz to 7GHz*
■
Wide Input Power Range: –32dBm to 10dBm
■
External Gain Control
■
Precision V
OUT
Offset Control
■
Low Starting Voltage: 200mV for Gain = 2
■
Wide V
CC
Range of 2.7V to 5.5V
■
Low Operating Current: 2mA
■
Available in a Low Profile (1mm) SOT-23 Package
Precision 600MHz to 7GHz,
RF Detector with
Adjustable Gain and
12MHz Baseband Bandwidth
The LTC
®
5535 is an RF power detector for RF applications
operating in the 600MHz to 7GHz range. A temperature
compensated Schottky diode peak detector and output
amplifier are combined in a small ThinSOT
TM
package. The
supply voltage range is optimized for operation from a
single cell lithium-ion or three cell NiMH battery.
The RF input voltage is peak detected using an on-chip
Schottky diode. The detected voltage is buffered and
supplied to the V
OUT
pin.
The LTC5535 output amplifier gain is set via external
resistors. The initial starting voltage of 200mV can be
precisely adjusted using the V
OS
pin.
The LTC5535 operates with input power levels from
–32dBm to 10dBm. The 12MHz baseband bandwidth is
much higher than that of previous Schottky detector
products.
, LTC and LT are registered trademarks of Linear Technology Corporation.
600MHz to 7GHz RF Power Detector
LTC5535
1
2
3
6
5
4
100pF 0.1µF
V
CC
V
OS
REFERENCE
V
CC
V
OUT
RF
IN
GND
V
OS
33pF
5535 TA01
RF
INPUT
V
M
R
A
R
B
Output Voltage vs RF Input Power
ThinSOT is a trademark of Linear Technology Corporation.
*Higher frequency operation is achievable with reduced performance. Consult factory for more
information.
RF INPUT POWER (dBm)
–32
V
OUT
OUTPUT VOLTAGE (mV)
800
3200
3600
–20 –16 –8 0–4
5535 TA02
2400
1600
400
2800
0
2000
1200
–28 –24 –12 48
12
V
CC
= 3.6V
T
A
= 25°C
GAIN = 2
V
OS
= 0V
2GHz
7GHz
600MHz
1GHz
5GHz
6GHz
4GHz
LTC5535
2
5535f
V
CC
, V
OUT
, V
M
, V
OS ..............................................
–0.3V to 6V
RF
IN
Voltage ...................................(V
CC
± 1.5V) to 6.5V
RF
IN
Power (RMS) .............................................. 12dBm
I
VOUT
.................................................................... 25mA
Operating Temperature Range (Note 2) .. – 40°C to 85°C
Maximum Junction Temperature ......................... 125°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
ABSOLUTE AXI U RATI GS
W
WW
U
PACKAGE/ORDER I FOR ATIO
UUW
(Note 1)
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ORDER PART
NUMBER
S6 PART
MARKING
T
JMAX
= 125°C, θ
JA
= 250°C/W LBHK
LTC5535ES6
6 V
CC
5 V
OUT
4 V
M
RF
IN
1
TOP VIEW
S6 PACKAGE
6-LEAD PLASTIC TSOT-23
GND 2
V
OS
3
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with
statistical process controls.
Note 3: The rise time at V
OUT
is measured between 1.3V and 2.3V.
Note 4: See Table 1 in Applications Information section.
Note 5: RF performance is tested at 1800MHz
Note 6: Guaranteed by design.
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 3.6V, RF Input Signal is Off, RA = RB = 500Ω, VOS = 0V unless
otherwise noted.
PARAMETER CONDITIONS MIN TYP MAX UNITS
V
CC
Operating Voltage ●2.7 5.5 V
I
VCC
Operating Current I
VOUT
= 0mA ●2 3.5 mA
V
OUT
V
OL
(No RF Input) ●150 180 to 220 250 mV
V
OUT
Output Current V
OUT
= 1.75V, V
CC
= 2.7V to 5.5V, ∆V
OUT
< 10mV 10 20 mA
V
OUT
Bandwidth C
LOAD
= 33pF, R
LOAD
= 2k, P
IN
= –10dBm (Note 4) 12 MHz
V
OUT
Load Capacitance (Note 6) ●33 pF
V
OUT
Slew Rate V
RFIN
= 1V Step, C
LOAD
= 33pF (Note 3) 50 V/µs
V
OUT
Noise V
CC
= 3V, Noise BW = 1.5MHz, 50Ω RF Input Termination, 1 mV
P-P
50Ω AC Output Termination
V
OS
Voltage Range ●01V
V
OS
Input Current V
OS
= 1V ●–0.5 0.5 µA
V
M
Voltage Range ●0V
CC
-1. 8 V
V
M
Input Current V
M
= 3.6V ●–0.5 0.5 µA
RF
IN
Input Frequency Range 600 to 7000 MHz
RF
IN
Input Power Range RF Frequency = 300MHz to 7GHz (Note 5, 6) V
CC
= 2.7V to 6V –32 to 10 dBm
RF
IN
AC Input Resistance F = 1000MHz, Pin = –25dBm 220 Ω
RF
IN
Input Shunt Capacitance F = 1000MHz, Pin = –25dBm 0.65 pF
LTC5535
3
5535f
TYPICAL PERFOR A CE CHARACTERISTICS
UW
Typical Detector Characteristics,
1000MHz, Gain = 2, VOS = 0V
Typical Detector Characteristics,
2000MHz, Gain = 2, VOS = 0V
Typical Detector Characteristics,
3000MHz, Gain = 2, VOS = 0V
Typical Detector Characteristics,
4000MHz, Gain = 2, VOS = 0V
Typical Detector Characteristics,
5000MHz, Gain = 2, VOS = 0V
Typical Detector Characteristics,
6000MHz, Gain = 2, VOS = 0V
Output Voltage vs Supply Voltage Supply Current vs Supply Voltage
(RLOAD = 1k = RA + RB)
SUPPLY VOLTAGE (V)
2.5
V
OUT
OUTPUT VOLTAGE (mV)
210
215
220
45
5535 G01
205
200
3 3.5 4.5 5.5 6
195
190
T
A
= 85°C
T
A
= 25°C
T
A
= –40°C
GAIN = 2
V
OS
= 0V
RF INPUT SIGNAL OFF
SUPPLY VOLTAGE (V)
2.5
SUPPLY CURRENT (mA)
2.4
2.6
2.8
45
5535 G02
2.2
2.0
3 3.5 4.5 5.5 6
1.8
1.6
T
A
= 85°C
T
A
= 25°C
T
A
= –40°C
RF INPUT SIGNAL OFF
Typical Detector Characteristics,
600MHz, Gain = 2, VOS = 0V
RF INPUT POWER (dBm)
–32
V
OUT
OUTPUT VOLTAGE (mV)
800
3200
3600
–20 –16 –8 0–4
5535 G03
2400
1600
400
2800
0
2000
1200
–28 –24 –12 48
12
V
CC
= 3.6V
T
A
= 85°C
T
A
= –40°C
T
A
= 25°C
RF INPUT POWER (dBm)
–32
V
OUT
OUTPUT VOLTAGE (mV)
800
3200
3600
–20 –16 –8 0–4
5535 G04
2400
1600
400
2800
0
2000
1200
–28 –24 –12 48
12
V
CC
= 3.6V
T
A
= 85°C
T
A
= –40°C
T
A
= 25°C
RF INPUT POWER (dBm)
–32
VOUT OUTPUT VOLTAGE (mV)
800
3200
3600
–20 –16 –8 0–4
5535 G05
2400
1600
400
2800
0
2000
1200
–28 –24 –12 48
12
VCC = 3.6V
TA = 85°C
TA = –40°C
TA = 25°C
RF INPUT POWER (dBm)
–32
V
OUT
OUTPUT VOLTAGE (mV)
800
3200
3600
–20 –16 –8 0–4
5535 G06
2400
1600
400
2800
0
2000
1200
–28 –24 –12 48
12
V
CC
= 3.6V
T
A
= 85°C
T
A
= –40°C
T
A
= 25°C
RF INPUT POWER (dBm)
–32
V
OUT
OUTPUT VOLTAGE (mV)
800
3200
3600
–20 –16 –8 0–4
5535 G07
2400
1600
400
2800
0
2000
1200
–28 –24 –12 48
12
V
CC
= 3.6V
T
A
= 85°C
T
A
= –40°C
T
A
= 25°C
RF INPUT POWER (dBm)
–32
V
OUT
OUTPUT VOLTAGE (mV)
800
3200
3600
–20 –16 –8 0–4
5535 G08
2400
1600
400
2800
0
2000
1200
–28 –24 –12 48
12
V
CC
= 3.6V
T
A
= 85°C
T
A
= –40°C
T
A
= 25°C
RF INPUT POWER (dBm)
–32
V
OUT
OUTPUT VOLTAGE (mV)
800
3200
3600
–20 –16 –8 0–4
5535 G09
2400
1600
400
2800
0
2000
1200
–28 –24 –12 48
12
V
CC
= 3.6V
T
A
= 85°C
T
A
= –40°C
T
A
= 25°C
LTC5535
4
5535f
TYPICAL PERFOR A CE CHARACTERISTICS
UW
(RLOAD = 1k = RA + RB)
VOUT vs RF Input Power and VCC,
2000MHz, Gain = 2, VOS = 0V,
TA = 25°C
Typical Detector Characteristics,
7000MHz, Gain = 2, VOS = 0V
RF INPUT POWER (dBm)
–32
V
OUT
OUTPUT VOLTAGE (mV)
800
3200
3600
–20 –16 –8 0–4
5535 G10
2400
1600
400
2800
0
2000
1200
–28 –24 –12 48
12
V
CC
= 3.6V
T
A
= 85°C
T
A
= –40°C
T
A
= 25°C
RF INPUT POWER (dBm)
–28
VOUT OUTPUT VOLTAGE (mV)
3600
4400
5200
4
5535 G11
2800
1200
3200
4000
4800
2000
400
1600
2400
800
0–20 –12 –4
–24–32 8
–16 –8 012
VCC = 6V
VCC = 5V
VCC = 4V
VCC = 3V
VOUT vs RF Input Power and VOS,
2000MHz, Gain = 2
RF INPUT POWER (dBm)
–32
V
OUT
OUTPUT VOLTAGE (mV)
800
3200
3600
–20 –16 –8 0–4
5535 G12
2400
1600
400
2800
0
2000
1200
–28 –24 –12 48
12
V
CC
= 3.6V
T
A
= 25°C
V
OS
= 1V
V
OS
= 0V
V
OS
= 0.5V
Typical Detector Characteristics,
2000MHz, Gain = 4, VOS = 0V
RF INPUT POWER (dBm)
–32
VOUT OUTPUT VOLTAGE (mV)
800
3200
4000
3600
–20 –16 –8 0–4
5535 G13
2400
1600
400
2800
0
2000
1200
–28 –24 –12 48
VCC = 3.6V
TA = 85°C
TA = –40°C
TA = 25°C
Time Domain Response at
fRF = 1900MHz, PRF = 0dBm
ASK
MODULATION
SIGNAL
500mV/DIV
OUTPUT
500mV/DIV
T
A
= 25°C 100ns/DIV 5535 G14
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
Time Domain Response at
fRF = 1900MHz, PRF = –10dBm
ASK
MODULATION
SIGNAL
100mV/DIV
OUTPUT
200mV/DIV
T
A
= 25°C 100ns/DIV 5535 G15
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
LTC5535
5
5535f
TYPICAL PERFOR A CE CHARACTERISTICS
UW
VOUT Slope vs RF Input Power
at 600MHz
VOUT Slope vs RF Input Power
at 1000MHz
VOUT Slope vs RF Input Power
at 2000MHz
VOUT Slope vs RF Input Power
at 3000MHz
VOUT Slope vs RF Input Power
at 4000MHz
VOUT Slope vs RF Input Power
at 5000MHz
VOUT Slope vs RF Input Power
at 6000MHz
VOUT Slope vs RF Input Power
at 7000MHz
(RLOAD = 1k = RA + RB)
RF INPUT POWER (dBm)
–30 –25 –20
V
OUT
SLOPE (mV/dB)
10
100
1000
–15 –10 –5 0 5 10
5535 G16
0
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
T
A
= –40°C
T
A
= 25°C
T
A
= 85°C
RF INPUT POWER (dBm)
–30 –25 –20
V
OUT
SLOPE (mV/dB)
10
100
1000
–15 –10 –5 0 5 10
5535 G17
0
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
T
A
= –40°C
T
A
= 25°C
T
A
= 85°C
RF INPUT POWER (dBm)
–30 –25 –20
V
OUT
SLOPE (mV/dB)
10
100
1000
–15 –10 –5 0 5 10
5535 G18
0
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
T
A
= –40°C
T
A
= 25°C
T
A
= 85°C
RF INPUT POWER (dBm)
–30 –25 –20
V
OUT
SLOPE (mV/dB)
10
100
1000
–15 –10 –5 0 5 10
5535 G19
0
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
T
A
= –40°CT
A
= 25°C
T
A
= 85°C
RF INPUT POWER (dBm)
–30 –25 –20
V
OUT
SLOPE (mV/dB)
10
100
1000
–15 –10 –5 0 5 10
5535 G20
0
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
T
A
= –40°CT
A
= 25°C
T
A
= 85°C
RF INPUT POWER (dBm)
–30 –25 –20
V
OUT
SLOPE (mV/dB)
10
100
1000
–15 –10 –5 0 5 10
5535 G21
0
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
T
A
= –40°CT
A
= 25°C
T
A
= 85°C
RF INPUT POWER (dBm)
–30 –25 –20
V
OUT
SLOPE (mV/dB)
10
100
1000
–15 –10 –5 0 5 10
5535 G22
0
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
T
A
= –40°CT
A
= 25°C
T
A
= 85°C
RF INPUT POWER (dBm)
–30 –25 –20
V
OUT
SLOPE (mV/dB)
10
100
1000
–15 –10 –5 0 5 10
5535 G23
0
V
CC
= 3.6V
GAIN = 2
V
OS
= 0V
T
A
= –40°CT
A
= 25°C
T
A
= 85°C
LTC5535
6
5535f
TYPICAL PERFOR A CE CHARACTERISTICS
UW
0.6000GHz-7.000GHz 5535 TA03
S11 Forward Reflection
Impedance
RF
IN
Input Impedance (Pin = –25 dBm, V
CC
= 3.6V, T
A
= 25
°
C)
FREQUENCY RESISTANCE REACTANCE
GHz (Ω)(Ω)
0.600 156.68 –127.09
0.728 135.50 –122.64
0.856 118.45 –116.93
0.984 104.52 –110.97
1.112 92.64 –105.02
1.240 83.35 –98.29
1.368 75.36 –92.40
1.496 68.73 –86.52
1.624 63.20 –80.86
1.752 58.56 –75.65
1.880 54.68 –70.56
2.008 51.40 –65.59
2.136 49.37 –60.89
2.264 47.90 –57.97
2.392 44.55 –55.20
2.520 41.81 –51.32
2.648 39.91 –47.76
2.776 38.28 –44.50
2.904 37.15 –41.35
3.032 35.94 –38.47
3.160 34.94 –35.89
3.288 33.78 –33.39
3.416 32.33 –30.93
3.544 31.04 –28.47
3.672 29.80 –25.80
3.800 28.71 –23.12
3.928 27.85 –20.43
4.056 27.29 –18.04
4.184 26.34 –15.61
4.312 25.48 –13.05
4.440 24.95 –10.41
4.568 24.50 –7.76
4.696 23.95 –5.20
4.824 23.67 –2.56
4.952 23.47 0.03
5.080 23.40 2.59
5.208 23.39 5.13
5.336 23.50 7.64
5.464 23.72 10.20
FREQUENCY RESISTANCE REACTANCE
GHz (Ω)(Ω)
5.592 24.09 12.74
5.720 24.60 15.21
5.848 25.20 17.55
5.976 26.02 19.70
6.104 26.80 21.46
6.232 27.27 22.90
6.360 27.22 24.41
6.488 26.98 26.35
6.616 26.79 28.58
6.744 26.75 31.11
6.872 26.85 33.76
7.000 27.06 36.48
LTC5535
7
5535f
S11 Forward Reflection
Impedance
0.6000GHz-7.000GHz 5535 TA04
TYPICAL PERFOR A CE CHARACTERISTICS
UW
RF
IN
Input Impedance (Pin = 0dBm, V
CC
= 3.6V, T
A
= 25
°
C)
FREQUENCY RESISTANCE REACTANCE
(GHz) (Ω)(Ω)
0.600 176.00 –174.00
0.728 148.00 –165.00
0.856 125.00 –153.00
0.984 108.00 –143.00
1.112 94.80 –133.00
1.240 83.20 –123.00
1.368 74.60 –115.00
1.496 67.50 –107.00
1.624 61.40 –99.00
1.752 56.80 –92.90
1.880 52.70 –86.10
2.008 49.30 –80.00
2.136 47.10 –74.40
2.264 45.30 –70.00
2.392 42.40 –66.70
2.520 39.60 –62.30
2.648 37.70 –58.60
2.776 36.30 –55.00
2.904 35.10 –51.00
3.032 34.00 –47.70
3.160 33.20 –44.60
3.288 32.10 –41.80
3.416 30.70 –39.50
3.544 29.10 –36.70
3.672 27.70 –33.70
3.800 26.60 –30.60
3.928 25.70 –27.70
4.056 25.00 –25.10
4.184 24.10 –22.10
4.312 23.50 –19.50
4.440 22.90 –17.10
4.568 22.40 –14.00
4.696 22.00 –11.40
4.824 21.70 –8.83
4.952 21.30 –5.99
5.080 21.20 –3.45
5.208 21.20 –0.77
5.336 21.20 1.70
5.464 21.40 4.46
FREQUENCY RESISTANCE REACTANCE
GHz (Ω)(Ω)
5.592 21.80 7.14
5.720 22.10 9.55
5.848 22.70 12.00
5.976 23.60 14.40
6.104 24.20 15.90
6.232 24.70 17.80
6.360 24.70 19.30
6.488 24.30 21.40
6.616 24.10 23.80
6.744 24.00 26.30
6.872 24.00 28.80
7.000 24.10 31.40
LTC5535
8
5535f
BLOCK DIAGRA
W
UU
U
PI FU CTIO S
RF
IN
(Pin 1): RF Input Voltage. Referenced to V
CC
. A
coupling capacitor must be used to connect to the RF
signal source. The frequency range is 600MHz to 7GHz.
This pin has an internal 500Ω termination, an internal
Schottky diode detector and a peak detector capacitor.
GND (Pin 2): Ground.
V
OS
(Pin 3): V
OUT
Offset Voltage Adjustment. From 0V to
200mV, V
OUT
does not change. Above 200mV, V
OUT
will
track V
OS
.
V
M
(Pin 4): Negative Input to Output Amplifier.
V
OUT
(Pin 5): Detector Output.
V
CC
(Pin 6): Power Supply Voltage, 2.7V to 5.5V. V
CC
should
be bypassed appropriately with ceramic capacitors.
–
+
–
+
5535 BD
5pF
VOUT
GND
12pF TO 200pF
(DEPENDING ON
APPLICATION)
2
5
VM
4
VOS
6
OUTPUT
AMPLIFIER
500Ω
500Ω
RF DET
AMPLIFIER
50µA50µA20k
BIAS
RFSOURCE
RFIN
VCC
1
7.5k
7.5k
–
+
+
200mV
3
20k
VP
LTC5535
9
5535f
APPLICATIO S I FOR ATIO
WUUU
Operation
The LTC5535 RF detector integrates several functions to
provide RF power detection over frequencies ranging
from 600MHz to 7GHz. These functions include an internal
frequency compensated output amplifier, an RF Schottky
diode peak detector and a level shift amplifier to convert the
RF input signal to DC. The LTC5535 has both gain setting
and voltage offset adjustment capabilities.
Output Amplifier
The output amplifier is capable of supplying typically
20mA into a load. The negative terminal V
M
is brought out
to a pin for gain selection. External resistors connected
between V
OUT
and V
M
(R
A
) and V
M
to ground (R
B
) will set
the gain of this amplifier.
Gain = 1 + R
A
/R
B
The amplifier is not unity gain stable; a minimum gain of
two is required. The output amplifier has a bandwidth of
20MHz with a gain of 2. For increased gain applications,
the bandwidth is reduced according to the formula:
Bandwidth = 40MHz/(Gain) = 40MHz • R
B
/(R
A
+ R
B
)
For stable operation the gain setting resistors should be
low values and the board capacitance on V
M
should be
minimized. R
B
is recommended to be no greater than
500Ω for all gain settings.
The V
OS
input controls the DC input voltage to the output
amplifier. V
OS
must be connected to ground if the DC
output voltage is not to be changed. The output amplifier
is initially trimmed to 200mV (Gain = 2) with V
OS
con-
nected to ground.
The V
OS
pin is used to change the initial V
OUT
starting
voltage. This function, in combination with gain adjust-
ment enables the LTC5535 output to span the input range
of a variety of analog-to-digital converters. V
OUT
will not
change until V
OS
exceeds 200mV. The starting voltage at
V
OUT
for V
OS
>200mV is:
V
OUT
= 0.5 • V
OS
• Gain
where gain is the output amplifier gain. For a gain of 2,
V
OUT
will exactly track V
OS
above 200mV.
RF Detector
The internal RF Schottky diode peak detector and level
shift amplifier converts the RF input signal to a low
frequency signal. The detector demonstrates excellent
efficiency and linearity over a wide range of input power.
The Schottky diode is biased at about 50µA and drives a
5pF internal peak detector capacitor.
RFIN
GND
VOS
VCC
VOUT
VM
LTC5535ES6
1
2
3
6
5
4
C4
39pF
RFIN
R1
(OPT)
OFFSET
ADJUSTMENT
C2
100pF
C1
0.1µF
RLOAD
(OPT)
VCC
2.7V TO 5.5V
VOUT
GND
R2
500Ω
1%
R3
500Ω
1%
5535 DB
Demo Board Schematic
LTC5535
10
5535f
APPLICATIO S I FOR ATIO
WUUU
Applications
The LTC5535 can be used as a self-standing signal strength
measuring receiver for a wide range of input signals from
–32dBm to 10dBm for frequencies from 600MHz to 7GHz.
The LTC5535 offers increased baseband bandwidth com-
pared to other Schottky diode detectors. Table 1 shows
that the baseband (demodulation) bandwidth is typically
12MHz at an RF input signal level of –10dBm. The baseband
bandwidth is largely independent of the RF input signal
frequency over the range of 600MHz to 7GHz.
Table 1
INPUT LEVEL OUTPUT BW FREQUENCY
(dBm) –3dB (MHz) (GHz) GAIN
–20 12.5 3 2
–10 12 3 2
–5 11 3 2
0 9.5 3 2
Operation at higher RF input frequencies is achievable.
Consult factory for more information.
The LTC5535 can be used as a demodulator for AM and
ASK modulated signals. Depending on specific application
needs, the RSSI output can be split between two branches,
providing AC-coupled data (or audio) output and a
DC-coupled RSSI output for signal strength measure-
ments and AGC.
LTC5535
11
5535f
PACKAGE DESCRIPTIO
U
S6 Package
6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
1.50 – 1.75
(NOTE 4)
2.80 BSC
0.30 – 0.45
6 PLCS (NOTE 3)
DATUM ‘A’
0.09 – 0.20
(NOTE 3) S6 TSOT-23 0302
2.90 BSC
(NOTE 4)
0.95 BSC
1.90 BSC
0.80 – 0.90
1.00 MAX 0.01 – 0.10
0.20 BSC
0.30 – 0.50 REF
PIN ONE ID
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. JEDEC PACKAGE REFERENCE IS MO-193
3.85 MAX
0.62
MAX
0.95
REF
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
1.4 MIN
2.62 REF
1.22 REF
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
LTC5535
12
5535f
LT/TP 07 04 1K • PRINTED IN USA
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900
●
FAX: (408) 434-0507
●
www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2004
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PART NUMBER DESCRIPTION COMMENTS
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