74HC240D,74HC244D
1
CMOS Digital Integrated Circuits Silicon Monolithic
74HC240D,74HC244D
74HC240D,74HC244D
74HC240D,74HC244D
74HC240D,74HC244D
Start of commercial production
2016-04
1.
1.
1.
1. Functional Description
Functional Description
Functional Description
Functional Description
Octal Bus Buffer
74HC240D: INVERTED, 3-STATE OUTPUTS
74HC244D: NON-INVERTED, 3-STATE OUTPUTS
2.
2.
2.
2. General
General
General
General
The 74HC240D and 74HC244D are high speed CMOS OCTAL BUS BUFFERs fabricated with silicon gate C2MOS
technology.
They achieve the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power
dissipation.
The 74HC240D is an inverting 3-state buffer and the 74HC244D are non-inverting 3-state buffers having two
active-low output enables.
These devices are designed to be used with 3-state memory address drivers, etc.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3.
3.
3.
3. Features
Features
Features
Features
(1) High speed: tpd = 10 ns (typ.) at VCC = 6.0 V
(2) Low power dissipation: ICC = 4.0 µA (max) at Ta = 25
(3) Balanced propagation delays: tPLH tPHL
(4) Wide operating voltage range: VCC(opr) = 2.0 V to 6.0 V
4.
4.
4.
4. Packaging
Packaging
Packaging
Packaging
SOIC20
2016-05-24
Rev.2.0
©2016 Toshiba Corporation
74HC240D,74HC244D
2
5.
5.
5.
5. Pin Assignment
Pin Assignment
Pin Assignment
Pin Assignment
74HC240D 74HC244D
6.
6.
6.
6. Marking
Marking
Marking
Marking
74HC240D 74HC244D
7.
7.
7.
7. IEC Logic Symbol
IEC Logic Symbol
IEC Logic Symbol
IEC Logic Symbol
74HC240D 74HC244D
2016-05-24
Rev.2.0
©2016 Toshiba Corporation
74HC240D,74HC244D
3
8.
8.
8.
8. Truth Table
Truth Table
Truth Table
Truth Table
Input G
L
L
H
Input An
L
H
X
Output Yn
L
H
Z
Output Yn
H
L
Z
X: Don't care
Z: High impedance
Yn: 74HC244D
Yn: 74HC240D
9.
9.
9.
9. Absolute Maximum Ratings (Note)
Absolute Maximum Ratings (Note)
Absolute Maximum Ratings (Note)
Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Input diode current
Output diode current
Output current
VCC/ground current
Power dissipation
Storage temperature
Symbol
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
PD
Tstg
Rating
-0.5 to 7.0
-0.5 to VCC + 0.5
-0.5 to VCC + 0.5
±20
±20
±35
±75
500
-65 to 150
Unit
V
V
V
mA
mA
mA
mA
mW
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
10.
10.
10.
10. Operating Ranges (Note)
Operating Ranges (Note)
Operating Ranges (Note)
Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Inputriseandfalltimes
Symbol
VCC
VIN
VOUT
Topr
tr,tf
Test Condition
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
Rating
2.0 to 6.0
0 to VCC
0 to VCC
-40 to 85
0 to 1000
0 to 500
0 to 400
Unit
V
V
V
ns
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
2016-05-24
Rev.2.0
©2016 Toshiba Corporation
74HC240D,74HC244D
4
11.
11.
11.
11. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
11.1.
11.1.
11.1.
11.1. DC Characteristics (Unless otherwise specified, T
DC Characteristics (Unless otherwise specified, T
DC Characteristics (Unless otherwise specified, T
DC Characteristics (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
)
)
)
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
Symbol
VIH
VIL
VOH
VOL
IOZ
IIN
ICC
Test Condition
VIN = VIH or VIL
VIN = VIH or VIL
VIN = VIH or VIL
VOUT = VCC or GND
VIN = VCC or GND
VIN = VCC or GND
IOH = -20 µA
IOH = -6 mA
IOH = -7.8 mA
IOL = 20 µA
IOL = 6 mA
IOL = 7.8 mA
VCC (V)
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
6.0
6.0
6.0
Min
1.50
3.15
4.20
1.9
4.4
5.9
4.18
5.68
Typ.
2.0
4.5
6.0
4.31
5.80
0.0
0.0
0.0
0.17
0.18
Max
0.50
1.35
1.80
0.1
0.1
0.1
0.26
0.26
±0.5
±0.1
4.0
Unit
V
V
V
V
µA
µA
µA
11.2.
11.2.
11.2.
11.2. DC Characteristics (Unless otherwise specified, T
DC Characteristics (Unless otherwise specified, T
DC Characteristics (Unless otherwise specified, T
DC Characteristics (Unless otherwise specified, Ta
a
a
a = -40 to 85
= -40 to 85
= -40 to 85
= -40 to 85
)
)
)
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
Symbol
VIH
VIL
VOH
VOL
IOZ
IIN
ICC
Test Condition
VIN = VIH or VIL
VIN = VIH or VIL
VIN = VIH or VIL
VOUT = VCC or GND
VIN = VCC or GND
VIN = VCC or GND
IOH = -20 µA
IOH = -6 mA
IOH = -7.8 mA
IOL = 20 µA
IOL = 6 mA
IOL = 7.8 mA
VCC (V)
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
6.0
6.0
6.0
Min
1.50
3.15
4.20
1.9
4.4
5.9
4.13
5.63
Max
0.50
1.35
1.80
0.1
0.1
0.1
0.33
0.33
±5.0
±1.0
40.0
Unit
V
V
V
V
µA
µA
µA
2016-05-24
Rev.2.0
©2016 Toshiba Corporation
74HC240D,74HC244D
5
11.3.
11.3.
11.3.
11.3. AC Characteristics (Unless otherwise specified, T
AC Characteristics (Unless otherwise specified, T
AC Characteristics (Unless otherwise specified, T
AC Characteristics (Unless otherwise specified, Ta
a
a
a = 25
= 25
= 25
= 25
, Input: t
, Input: t
, Input: t
, Input: tr
r
r
r = t
= t
= t
= tf
f
f
f = 6 ns)
= 6 ns)
= 6 ns)
= 6 ns)
Characteristics
Output transition time
Propagation delay time
Output enable time
Output disable time
Input capacitance
Output capacitance
Power dissipation
capacitance
Part Number
74HC240D
74HC244D
Symbol
tTLH,tTHL
tPLH,tPHL
tPZL,tPZH
tPLZ,tPHZ
CIN
COUT
CPD
Note
(Note 1)
Test
Condition
RL = 1 k
RL = 1 k
CL (pF)
50
50
150
50
150
50
VCC (V)
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
Min
Typ.
25
7
6
36
12
10
51
17
14
48
16
14
63
21
18
32
15
14
5
10
31
33
Max
60
12
10
90
18
15
130
26
22
125
25
21
165
33
28
125
25
21
10
Unit
ns
ns
ns
ns
pF
pF
pF
Note 1: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current
consumption without load. Average operating current can be obtained by the equation.
ICC(opr) = CPD × VCC × fIN + ICC/8 (per bit)
11.4.
11.4.
11.4.
11.4. AC Characteristics
AC Characteristics
AC Characteristics
AC Characteristics
(Unless otherwise specified, T
(Unless otherwise specified, T
(Unless otherwise specified, T
(Unless otherwise specified, Ta
a
a
a = -40 to 85
= -40 to 85
= -40 to 85
= -40 to 85
, Input: t
, Input: t
, Input: t
, Input: tr
r
r
r = t
= t
= t
= tf
f
f
f = 6 ns)
= 6 ns)
= 6 ns)
= 6 ns)
Characteristics
Output transition time
Propagation delay time
Output enable time
Output disable time
Input capacitance
Symbol
tTLH,tTHL
tPLH,tPHL
tPZL,tPZH
tPLZ,tPHZ
CIN
Test Condition
RL = 1 k
RL = 1 k
CL (pF)
50
50
150
50
150
50
VCC (V)
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
Min
Max
75
15
13
115
23
20
165
33
28
155
31
26
205
41
35
155
31
26
10
Unit
ns
ns
ns
ns
pF
2016-05-24
Rev.2.0
©2016 Toshiba Corporation
74HC240D,74HC244D
6
Package Dimensions
Package Dimensions
Package Dimensions
Package Dimensions
Unit: mm
Weight: 0.51 g (typ.)
Package Name(s)
Nickname: SOIC20
2016-05-24
Rev.2.0
©2016 Toshiba Corporation
74HC240D,74HC244D
7
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
RESTRICTIONS ON PRODUCT USE
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2016-05-24
Rev.2.0
©2016 Toshiba Corporation